Basic Electronics (ES-112)

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 Lecture 6-7

Diode Approximations (CLO-1)

References

 Introductory Electronic devices and Circuits by Robert T Paynter

 Electronic devices by Floyd

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Diode Approximations

 Three different diode approximations can be used when analyzing

diode circuits.
 The one used depends on the desired accuracy of your circuit
calculations.

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First Approximation(ideal Diode)

 The first approximation treats a forward-biased diode like a closed switch

with a voltage drop of zero volts

 Likewise, the first approximation treats a reverse-biased diode like an

open switch with zero current

 The first approximation of a diode is often used if only a rough idea is

needed of what the circuit voltages and currents should be

 The first approximation is sometimes called the ideal diode

approximation

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First Approximation
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Ideal Diode Model Example

Assume the diode in the circuit below is ideal. Determine the value of ID
if a) VA = 5 volts (forward bias) and b) VA = -5 volts (reverse bias).

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Solution

a) With VA > 0 the diode is in forward bias and is acting like a perfect
conductor so:

ID = VA/RS = 5 V / 50  = 100 mA

b) With VA < 0 the diode is in reverse bias and is acting like a perfect
insulator, therefore no current can flow and ID = 0.

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Second Approximation(Practical Diode)

  The second approximation treats a forward-biased diode like an ideal diode

in series with a battery

 For silicon diodes, the battery voltage is assumed to be 0.7 V, the same as
the barrier potential, , at a silicon p-n junction.

 The second approximation of a reverse-biased diode is an open switch

.
 Diode is considered off until the forward voltage, reaches 0.7 V

 The second approximation is used if more accurate answers are needed

for circuit calculations.
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Second Approximation

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Practical Diode Example

To be more accurate than just using the ideal diode model include the
barrier potential. Assume V = 0.3 volts (typical for a germanium diode)
Determine the value of ID if VA = 5 volts (forward bias).

With VA > 0 the diode is in forward bias and is acting like a perfect
conductor so write a KVL equation to find ID:
VA = IDRS + V
ID = VA - V = 4.7 V = 94 mA
RS 50  12
Third Approximation (Complete Practical Diode)

  The third approximation of a diode includes the bulk resistance,

designated

 The bulk resistance, , is the resistance of the p and n materials. Its

value is dependent on the doping level and the size of the p and n
materials.

 The bulk resistance, , causes the forward voltage across a diode to

increase slightly with increases in the diode current.

 In reverse, it shows small leakage current flows.

VF=VB+

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Third Approximation (Complete Practical Diode)

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Third Approximation (Complete Practical Diode)

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Third Approximation (Complete Practical Diode)

Assume the diode is a low-power diode with a forward resistance value

of 5 ohms. The barrier potential voltage is still: V = 0.3 volts (typical for
a germanium diode) Determine the value of ID if VA = 5 volts.

Once again, write a KVL equation for

the circuit:
VA = IDRS + V + IDRF

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Summary

 The first approximation is adequate for most Trouble shooting Situations

when you are trying to determine if the diode is working properly.

 The Second Approximation is often used when if more accurate values

for load current and voltages are required.

 The third Approximation provides accurately represent the operating

characteristics of diode.
.

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Examples

  
Example01: A silicon diode has a forward voltage drop of 1.1 V for a
forward diode current, of 1 A. Calculate the bulk resistance,
 Example 02: Redraw the following circuit in the three diode circuit
approximations. Also mention the voltage drop values across resistor.

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Examples

 Example 03: For the following circuits, answer the following questions.
1. Are the diodes forward or reverse biased?
2. what is the voltage drop across diodes.
3. What is the value of current in the circuit.
4. How would the circuit analysis change if Si diode is replaced by a Ge
diodes.

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Diode water analogy- Diode operation

 In the following water analogy, a diode is treated like a one-way gate

that has a “for- ward-biasing spring.”
 Water pressure on top of the gate must apply a force large enough to
overcome the restoring spring force.
 This spring force is analogous to the 0.6V needed to forward bias a
silicon diode.
 Note that if pressure is applied to the bottom of the trap door, a blocker
will prevent the trap door from swinging upward, preventing current
flow in the upward direction, which is analogous to reverse-biasing a
diode.

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Diode water analogy- Diode operation

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APPLICATIONS OF DIODE

Radio Demodulation:- In demodulation of amplitude modulated (AM) radio

broadcasts diodes are used.
Power Conversion:- Full-wave rectifiers are made using diodes, to convert
alternating current electricity into direct current .
Over-voltage Protection:- Diodes are used to conduct damaging high
voltages away from sensitive electronic devices by putting them in reverse-
biased condition under normal circumstances.
 In stepper motor, H-bridge motor controller and relay circuit’s diodes are
used to de-energize coils rapidly without damaging voltage spikes that
would otherwise occur. These are called a fly-back or free-wheeling
diodes.
 Logic Gates:- AND and OR logic gates are constructed using diodes in
combination with other components. This is called diode logic.
Charge-coupled Devices:- Arrays of photodiode, integrated with readout
circuitry are used in digital cameras and similar units.
Laser diodes are used in optical communications.
Light Emitting Diodes (LEDs) are used in digital displays.
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APPLICATIONS OF DIODE

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