The EKV Model

version 2.6

work by Enz, Krummenacher, and Vittoz

(Enz et al. 1995)
 MODEL FEATURES

• Uses the bulk node as the reference for all voltages.

• Symmetric forward/reverse operation of the MOSFET.
• Modeling of weak and moderate inversion to provide accurate
predictions of lowvoltage,
• low-current designs.
• Geometry- and process-related dependencies.
• Effects of doping profiles.
• Single-expression model that preserves continuity of all
derivatives
• Thermal and flicker noise modeling
 1.LONG-CHANNEL DRAIN CURRENT
MODEL
• Bulk node is chosen as the reference node
-to exploit the intrinsic symmetry

drain current is,

• the model describes
the weak,
moderate, and strong inversion
regimes of operation with a single expression

• only parameter specified for both

1.thecharge/transcapacitance model
2.thermal noise model,
is TOX (or Cox)
 2.MODELING SECOND-ORDER EFFECTS
OF THE DRAIN CURRENT
• velocity saturation,
• mobility degradation,
• channel-length modulation,
• charge-sharing,
• reverse short-channel effect
 (a)Velocity Saturation and Channel-length Modulation

• Body factor by replacing L by Leq to include

both effects. where,

• Reduction in the effective channel length due to CLM is

• increase in the effective channel length due to velocity

saturation is,
(b) Mobility Degradation due to Vertical Electric Field

KP is the transconductance parameter

ϴ is a model parameter called the mobility reduction

coefficient
 3.MODELING OF CHARGE STORAGE
EFFECTS
• to predict the dynamic performance, a model for the
capacitances or stored charges is also required
All parasitic capacitances are as follows
 4.THE NOISE MODEL

• inherent noise of MOS transistors

– Where
 MOS MODEL 9
benefits

• The consistency of current and charge descriptions by using the

same carrier-density and electrical-field expressions.
• Accurate prediction of the transition from weak to strong
inversion.
• Accurate prediction of the transition from linear to saturation
region.
• Continuity in all charges and current expressions and their
derivatives.
• A reduced parameter set to describe an individual transistor.
 MOSA1 MODEL
• based on our unified charge control model (UCCM) and the
universal FET model
• models exhibit improved accuracy over the basic MOSFET
models
• Secondary effects are
velocity saturation in the channel,
the channellength modulation (CLM),
the threshold voltage shift due to DBIL
the effects of bulk charge,
the bias-dependent average low-field mobility
self-heating
• Sub-threshold current is very important since it has consequences
for the
bias and logic levels
needed to achieve
satisfactory off-state in digital operations

• To correctly model the sub-threshold operation of MOSFETs,

- we need a Unified charge control model
 Unified MOSFET I –V Model
(unified drain current model)
• to establish a continuous expression for the I –V characteristics,
expressing the drain current in each regime
then make smooth transitions between them

• we want the model to be extrinsic

• to bridge the transition between the linear and the saturation
regimes
– with one single expression.

• following extrinsic, universal interpolation expression

•From simple velocity saturation model

•subthreshold saturation current is obtained for Vds > 2Vth

in the above equation,

causing the dependence on Vds to vanish.

 Effects and Modeling of Process
Variation and Device Mismatch
• process variation and manufacturing uncertainty

• difficulty in controlling the variation in different fabrication

steps

• two categories
– interdie variation
– intradie variation

• The intradie device variation die-/wafer-level process

variability in
oxide thickness & doping profile
This is called local process variation and mismatch(LPVM)
THE INFLUENCE OF PROCESS VARIATION
AND DEVICE MISMATCH
1. The Influence of LPVM on Resistors:

• CMOS and BICMOS technologies offer several different

resistors,
diffusion n+/p+ resistors,
n+/p+ poly resistors,
n-well resistor