LECTURE 6: BJT’S

AS AMPLIFIER
ANTONIUS SUHARTOMO, Ph.D.
TOPIC AGENDAS

• TRANSISTOR  BJT • CB CONFIGURATION (COMMON

• EMITTER CURRENT BASE)

• WORK OPERATIONS OF PNP • CB CHARACTERISTIC (NPN)

• WORK OPERATIONS OF NPN • CE CONFIGURATION (COMMON

EMITTER)
• PHYSICAL STRUCTURE
• CE CHARACTERISTIC
• SYMBOL
• CC CHARACTERISTIC (COMMON
COLLECTOR)
ISTRUCTIONAL GOALS

• Getting to know the physical structure of BJT

• Understanding the inter-relationship between current and voltage BJT
• Understanding the area of operation of transistors
COMPARISON

Transistor

Bipolar Unipolar
[ Bipolar Junction [ Field Effect
Transistor (BJT)] Transistor (FET)]
COMPARISON

• Compared with the FET, BJT can provide much greater amplification
• Wider frequency response.
• In both BJT majority carriers and minority carriers have equally important role
BIPOLAR JUNCTION TRANSISTOR

• BJT transistor is a three terminal semiconductor devices are built from:

• two P-type material and an N-type material  PNP
• two N-type material and a P-type material NPN
• Doping at the center is given less than the outer part (approximately 10: 1).
• This low doping reduce the conductivity of the material by limiting the number of free
electrons.
• The term bipolar comes from the fact that electrons and holes participate in the process of the
current generation.
PNP
BIASING

• Forward bias the emitter-base junction causing a large number of majority carriers (holes) on
the P-type material (emitter) diffused past junction toward the N-type material (base).
• Because the free electrons in the N-type material (base) a little more than holes diffused (N-
doping low), only a little hole do recombination of electrons and produce a current in the base.
• Most holes will move past the depletion region at the base-collector junction (by reverse bias)
and exit at the collector terminal.
EMITTER CURRENT

•  
• where:
WORK OPERATIONS OF PNP
NPN
WORK OPERATIONS OF NPN
PHYSICAL STRUCTURE
SYMBOL

PNP NPN
WORKING PRINCIPLE

• The working principle is the small current bias transistor base-emitter set large current
collector-emitter.
• The next important part is how to give the proper bias current that the transistor can work
optimally.
• There are three common ways to give the bias current to the transistor, the circuit CB
(Common Base), CE (Common Emitter), CC (Common Collector)
CB CONFIGURATION (COMMON BASE)
CB CHARACTERISTIC (NPN)

••   versus

INPUT CHARACTERISTIC
••   versus
SATURATION REGION

ACTIVE REGION

CUT-OFF REGION
• The
  active region is the area where the linear reinforcement occurs, the active region,
emitter-collector junction in reverse bias while the base-emitter junction in forward bias.
• Cut-off areas are defined as areas where current , or areas cut-off occurs if the emitter-
collector junction and the base-emitter junction in reverse bias.
• Saturation region is a region where the value of a negative voltage the saturation region
is a region where the emitter-collector junction and the base-emitter junction in forward
bias.
CE CONFIGURATION (COMMON EMITTER)
CE CHARACTERISTIC

••   versus

Input Characteristic Curve

CE CHARACTERISTIC

Saturation area

Active area

Cut-off area
CC CHARACTERISTIC (COMMON
COLLECTOR)
CC CHARACTERISTIC (COMMON
COLLECTOR)
• Common Collector configuration is generally used as a
matching impedance circuit because it has a high input
impedance and low output impedance,
• CC configuration input characteristics are similar to the
characteristics of the CE configuration. Output characteristics is
a plot between IE with the VEC to the values of IB, with the shape
of the curve is the same as the output characteristics CE.
LECTURE 7: DC
BIAS
ANTONIUS SUHARTOMO, Ph.D.
INSTRUCTIONAL GOAL

• The student will have an ability to analyze a series of pre-voltage BJT

THE VOLTAGE TRANSISTOR NPN
DC BIAS ANALYSIS PROCEDURE:

• Input ac replaced with inner resistance (principle of superposition)

• Capacitor components is made open circuit
• Create a current flow that matches with the type of transistor
FIXED BIAS CIRCUIT
  

FIXED BIAS

 𝐼 𝐵
+
 𝑅 𝐵
𝑉
  𝐶𝐶
+
𝑉
  𝐵𝐸

(a) (b)
Fixed – bias circuit DC equivalent
•• The
  current directions are the actual current directions, and the voltages are defined by the standard double –
subscript notation.
• For the dc analysis the network can be isolated from the indicated ac level by replacing the capacitors with an
open circuit equivalent because the resistance of a capacitor is a function of the applied frequency.
• For dc, f = 0 Hz, and
• In addition, the dc supply can be separated into two supplies to permit a separation of input and output circuits.
• It also reduces the linkage between the two to the base current
• The separation is certainly valid, as seen in the Figure (b), that is connected directly to and as seen in
Figure (a).
COLLECTOR–EMITTER LOOP
Collector – Emitter loop analysis

• Applying Kirchhoff’s voltage

law

• From single- and double-

subscript notation recall that

• In this case, since

• CE loop analysis

• Thus,
THE EMITTER BIAS CIRCUIT STABILIZER
INDIVIDUAL BIAS CIRCUIT /
VOLTAGE DIVIDERS
COLLECTOR DC BIAS CURRENT TO THE
BASE/ FEEDBACK