Electronic Devices and Circuit Theory

Boylestad

DC Biasing - BJTs
Chapter 4

Dr. Nasser H. Almofari 1

Ch.4 Summary

Biasing

Biasing: Applying DC voltages to a transistor in order

to turn it on so that it can amplify AC signals.

Dr. Nasser H. Almofari 2

Ch.4 Summary

Operating Point

The DC input
establishes an
operating or
quiescent point
called the Q-point.

Dr. Nasser H. Almofari 3

Ch.4 Summary

The Three Operating Regions

Active or Linear Region Operation
• Base–Emitter junction is forward biased
• Base–Collector junction is reverse biased

Cutoff Region Operation

• Base–Emitter junction is reverse biased

Saturation Region Operation

• Base–Emitter junction is forward biased
• Base–Collector junction is forward biased

Dr. Nasser H. Almofari 4

Ch.4 Summary

DC Biasing Circuits
Fixed-bias circuit
Emitter-stabilized bias circuit
Collector-emitter loop
Voltage divider bias circuit
DC bias with voltage feedback

Dr. Nasser H. Almofari 5

Ch.4 Summary

Fixed Bias

Dr. Nasser H. Almofari 6

Ch.4 Summary

The Base-Emitter Loop

From Kirchhoff’s voltage
law:

+VCC – IBRB – VBE = 0

Solving for base current:

VCC  VBE
IB 
RB

Dr. Nasser H. Almofari 7

Ch.4 Summary

Collector-Emitter Loop

Collector current:
IC   IB

From Kirchhoff’s voltage law:

VCE  VCC  IC RC

Dr. Nasser H. Almofari 8

Ch.4 Summary

Saturation

When the transistor is operating in saturation, current

through the transistor is at its maximum possible value.

V
ICsat  CC
R
C

VCE  0 V

Dr. Nasser H. Almofari 9

Ch.4 Summary

Emitter-Stabilized Bias Circuit

Dr. Nasser H. Almofari 10

Ch.4 Summary

Base-Emitter Loop
From Kirchhoff’s voltage law:
 VCC  IE RE  VBE  IE RE  0

Since IE = ( + 1)IB:
VCC  IB RB  (β  1)I B RE  0

Solving for IB:

VCC  VBE
IB 
RB  (β  1)RE

Dr. Nasser H. Almofari 11

Ch.4 Summary

Collector-Emitter Loop
From Kirchhoff’s voltage law:
I E RE  VCE  I C RC  VCC  0

Since IE  IC:
VCE  VCC – I C(RC  R E )

Also:
VE  I E RE
VC  VCE  VE  VCC  IC RC
VB  VCC – I R RB  VBE  VE

Dr. Nasser H. Almofari 12

Dr. Nasser H. Almofari 13
Ch.4 Summary

Improved Biased Stability

Stability refers to a condition in which the currents and

voltages remain fairly constant over a wide range of
temperatures and transistor Beta () values.

Adding RE to the emitter improves

the stability of a transistor.

Dr. Nasser H. Almofari 14

Ch.4 Summary

Saturation Level

The endpoints can be determined from the load line.

VCE  0 V
VCEcutoff: VCE  VCC ICsat: VCC
IC  0 mA IC 
RC  RE

Dr. Nasser H. Almofari 15

Ch.4 Summary

Voltage Divider Bias

This is a very stable bias circuit.

Dr. Nasser H. Almofari 16

Dr. Nasser H. Almofari 17
Ch.4 Summary

Voltage Divider Bias Analysis

Transistor Saturation Level
V CC
I Csat  ICmax 
RC  RE

Saturation:
V
I  CC
C R R
C E
VCE  0 V

Dr. Nasser H. Almofari 18

Ch.4 Summary

DC Bias With Voltage Feedback

Dr. Nasser H. Almofari 19

Ch.4 Summary

Base-Emitter Loop
From Kirchhoff’s voltage law:
VCC – IC RC –IB RB –VBE –IE RE  0

Where IB << IC: I' C  IC  IB  IC

Knowing IC = IB and IE  IC, the

loop equation becomes:
VCC – β–B RC  IB RB  VBE  βI B RE  0

VCC  VBE
Solving for IB: IB 
RB  β(RC  RE )

Dr. Nasser H. Almofari 20

Ch.4 Summary

Collector-Emitter Loop
Applying Kirchoff’s voltage law:

IE + VCE + I’CRC – VCC = 0

Since IC  IC and IC = IB:

IC(RC + RE) + VCE – VCC =0

Solving for VCE:

VCE = VCC – IC(RC + RE)

Dr. Nasser H. Almofari 21

Dr. Nasser H. Almofari 22
Ch.4 Summary

Base-Emitter Bias Analysis

Transistor Saturation Level

V CC
I Csat  ICmax 
RC  RE

Load Line Analysis

Cutoff Saturation
V
VCE  VCC I  CC
C R R
C E
IC  0 mA
VCE  0 V

Dr. Nasser H. Almofari 23

Ch.4 Summary

Transistor Switching Networks

Transistors with only the DC source applied can be

used as electronic switches.

Dr. Nasser H. Almofari 24

Ch.4 Summary

Switching Circuit Calculations

Saturation current:
VCC
ICsat 
RC

To ensure saturation:
ICsat
IB 
βdc

Emitter-collector
resistance at VCEsat VCC
Rsat  Rcutoff 
saturation and cutoff: ICsat ICEO

Dr. Nasser H. Almofari 25

Ch.4 Summary

Switching Time

Transistor switching times:

t on  t r  t d

t off  t s  t f

Dr. Nasser H. Almofari 26

Ch.4 Summary

Troubleshooting Hints
Approximate voltages VBE  .7 V for silicon transistors
VCE  25% to 75% of VCC

Test for opens and shorts with an ohmmeter.

Test the solder joints.
Test the transistor with a transistor tester or a curve tracer.
Note that the load or the next stage affects the transistor
operation.

Dr. Nasser H. Almofari 27

Ch.4 Summary

PNP Transistors

The analysis for pnp transistor biasing circuits is

the same as that for npn transistor circuits. The
only difference is that the currents are flowing in
the opposite direction.

Dr. Nasser H. Almofari 28