Opto-Electronics

PG [PHY1003E3]
Department of Physics
Cotton University
Dr. Anil Hazarika, M.Sc, M.Tech, PhD
Outlines
Unit-2
3.1. Basic understanding of Semiconductor/LED
3.2. Statistics and population
3.3. Transport Phenomena
3.4. Length, DB and IDB
3.5. Hetero-junction
3.6. LED
3.7. Quantum Efficiency
 3.1. Basic understanding of semiconductor/LED
A light-emitting diode (LED) is a semiconductor 
light source that emits light when current flows through
it. Electrons in the semiconductor recombine with 
electron holes, releasing energy in the form of photons.
The color of the light (corresponding to the energy of the
photons) is determined by the energy required for
electrons to cross the band gap of the
semiconductor. White light is obtained by using multiple
semiconductors or a layer of light-emitting phosphor on
the semiconductor device.

Based on bandgap: 1. Direct band 2. indirect band

semiconductor
Examples: Direct bandgap: GaAs, GaIn, GaInP etc.
Indirect bandgap: Si, Ge, C, etc.
3.2. Statistics and populations
Contd…
Contd..
3.3. Transport phenomena

Assignment
Contd..
3.4. Light penetration length, Direct bandgap and indirect bandgap
3.5. LED
3.6. Heterojunction
A heterojunction is an interface that occurs between
two layers or regions of dissimilar semiconductors. These
semiconducting materials have unequal band gaps as
opposed to a homojunction.
It is often advantageous to engineer the electronic energy
bands in many solid-state device applications, including
semiconductor lasers, solar cells and transistors.

The combination of multiple heterojunctions together in a

device is called a heterostructure, although the two
terms are commonly used interchangeably. 
Applications: Solar cell, laser, BJT, FET etc.

3.7. Quantum efficiency
The term quantum efficiency (QE) may apply to incident
photon to converted electron (IPCE) ratio[1] of a 
photosensitive device, or it may refer to the TMR effect
 of a Magnetic Tunnel Junction.
Types
Two types of quantum efficiency of a solar cell are often
considered:
•External Quantum Efficiency (EQE) is the ratio of the
number of charge carriers collected by the solar cell to the
number of photons of a given energy shining on the solar
cell from outside (incident photons).
•Internal Quantum Efficiency (IQE) is the ratio of the
number of charge carriers collected by the solar cell to the
number of photons of a given energy that shine on the
solar cell from outside and are absorbed by the cell.
The IQE is always larger than the EQE. A low IQE
indicates that the active layer of the solar cell is unable to
make good use of the photons, most likely due to poor
carrier collection efficiency. To measure the IQE, one
first measures the EQE of the solar device, then
measures its transmission and reflection, and combines
low IQE indicates that the active layer of
q u a n tu m e ffic ie n c y, a n d re fle c ta n c e w ith w a v e le n g th o f a
the solar cell is unable to make good use of
c ry s ta llin e s ilic o n s o la r c e ll.
the photons, most likely due to poor carrier
collection efficiency. To measure the IQE,
one first measures the EQE of the solar device, then measures its transmission and reflec
combines these data to infer the IQE.
The external quantum efficiency therefore depends on both the absorption of light and the col
charges. Once a photon has been absorbed and has generated an electron-hole pair, these char
be separated and collected at the junction. A "good" material avoids charge recombination
recombination causes a drop in the external quantum efficiency.
The ideal quantum efficiency graph has a square shape, where the QE value is fairly constant a
entire spectrum of wavelengths measured. However, the QE for most solar cells is reduced becau
The external quantum efficiency therefore
effects of recombination, where charge carriers are not able to move into an external circuit. T
mechanisms that affect the collection probability also affect the QE. For example, modifying
depends on both the absorption of light and the
surface can affect carriers generated near the surface. Highly doped front surface layers can a
'free carrier absorption' which reduces QE in the longer wavelengths.[3] And because high-ener
collection of charges. Once a photon has been
light is absorbed very close to the surface, considerable recombination at the front surface will
"blue" portion of the QE. Similarly, lower energy (green) light is absorbed in the bulk of a solar c
absorbed and has generated an electron-hole
low diffusion length will affect the collection probability from the solar cell bulk, reducing the Q
green portion of the spectrum. Generally, solar cells on the market today do not produce much e
pair, these charges must be separated and
from ultraviolet and infrared light (<400  nm and >1100  nm wavelengths, respectivel
collected at the junction. A "good" material
wavelengths of light are either filtered out or are absorbed by the cell, thus heating the cell. Th
wasted energy, and could damage the cell.[4]
avoids charge recombination. Charge
http s://en .w ik ip ed ia.org/w ik i/Q u an tu m _efficien cy
recombination causes a drop in the external
quantum efficiency.
2.5. Total Internal reflection
Total internal reflection, in physics, complete
reflection of a ray of light within a medium such
as water or glass from the surrounding surfaces
back into the medium. The phenomenon occurs if
the angle of incidence is greater than a certain
limiting angle, called the critical angle.
Thank you