PROBLEMS

1. Direct energy gap of a ternary semiconductor (GaPx As1-x) with

x = 0.7, is given by 1.424 + 1.50 x + 0.176 x2, Evaluate the output spectral
wavelength of the given semiconductor. (Ans=485nm)

2. Calculate the wavelength of photons emitted from GaAs crystal as a result of

electron-hole recombination. Is this wavelength is visible? Will a silicon
photodetector be sensitive to the radiation from a GaAs laser and why?
[Consider Eg = 1.42eV for GaAs and 1.1 eV for Si].
(Ans λ=873 nm,1127nm)
3. A Quarternary alloy In1-xGaxAsyP1-y grown on InP substrate is suitable
for commercial LEDs and Lasers. The device requires InGaAsP layer is
lattice matched with InP crystal substrate to avoid crystal defects in the
layer which requires y=2.2x. Emprical relation for bandgap energy in eV
is given by Eg=1.35-0.72y+0.12y2 ; 0 ≤ x ≤ 0.47.Calculate the
composition of InGaAsP for a peak emission wavelength at 1.3µm.