Chapter 4

Thyristors Devices
1. A thyristors is one of the most important types of SC devices
operated as bistable switch.
2. They can convert and control large amount of power in AC and DC
systems while using low power.
3. It is a four layer SC device of pnpn structure with three pn
junctions.
Thyristor family discussed in this chapter are:
4. Silicon controlled rectifier (SCR)
5. Gate-turnoff thyristor (GTO)
6. Triac
7. Diac
8. Silicon controlled switch (SCS)
9. MOS-controlled thyristor (MCT)
Silicon controlled rectifier (SCR)
1. The silicon controlled rectifier (SCR) is the most popular
electrical power controller due to its fast switching action,
small size and high current and voltage ratings.
2. It has three terminals anode, cathode and gate.

Fig 4-1: Three pn junction and SCR symbol

SCR Characteristics
1. SCR is said to be in forward blocking or off state condition
when J2 is reverse biased and the leakage current flowing in
thyristor is called off-state current ID.
2. A SCR is said to be in conducting state or on state when
forward breakdown voltage is applied across J2.
3. Forward breakdown voltage (VBO) would be destructive so
forward voltage VAK is maintained below VBO and thyristor is
turned on by applying positive VG between its gate and
cathode.
4. The voltage drop due to ohmic drop in 4 layers is small
typically 1V.
5. A SCR is called the latching device because the current is
continue to conduct even if the gate signal is removed.
Characteristic curve

Fig 4-2: SCR circuit and V-I characteristics

Contd…
1. Latching current IL is the minimum anode current required to
maintain the thyristor in the on state immediately after the gate
signal is removed.
2. Holding current IH is the minimum anode current required to
maintain the thyristor in the on state but it is associated with
turn off of the thyristor.
Two transistor model of the SCR
Characteristic curve
Contd…

SCR Turn-on
A SCR is turn on by increasing the anode current and this can be
accomplished by following ways:
1. Thermals
2. Light
3. High Voltage
4. Gate Current
• Once the SCR is turned on gate loses control even if the IG = 0.
• SCR only be off by removing the supply voltage or reducing
the anode current below holding current.
SCR Turn-off
• A SCR is turn off by reducing the forward I below IH.
• There are various commutation techniques to turning off SCR
discussed later.
• Outer junction J1 and J3 has same characteristics like a diode,
exhibiting trr and IRR.
Contd…
• The inner junction J2 will require a time known as
recombination time trc to recombine the excess carriers.
• Turn off time tq is the minimum value of time interval between
the instant when the on state ‘I’ has decreased to zero and the
instant when the thyristor is capable of withstanding forward
voltage without turning on.
4.5.5 SCR Rate-of-Change Ratings
The Critical Rate of Rise of the on-state current (di/dt rating (A/μs))

• A SCR requires a minimum time to spread the I conduction uniformly

through out the junction.
• If the rate of rise of IA is very fast compared to the spreading velocity of the
turn-on process, a “Hot-spot” heating will occur and device may fail due to
excessive heating.

where

L is inductance (in μH)

(di/dt)max is the rate-of-change-of-current rating of the SCR (in A/μs)
Vp is the peak value of the source voltage (in V)