SILICON CONTROLLED

RECTIFIER
 Introduction to SCR
 Thyristor is the most important type of power
semiconductor devices.
 They are extensively used in power electronic
circuits.
 They are operated as bi-stable switches from
non-conducting to conducting state.
 A Thyristor is a four layer, semiconductor of p-n-p-
n structure with three p-n junctions. It has three
terminals, the anode, cathode and the gate.
 The word Thyristor is coined from Thyratron and
transistor. It was invented in the year 1957 at Bell
Labs.
SCR structure and symbol
STATIC CHARACTERISTICS OF SCR
 Modes of operation of SCR

There are three modes of operation of SCR

1.Reverse blocking mode(Off state)

2.Forward blocking mode(Off state)
3.Forward conduction mode(On state)
 Reverse blocking mode
 When a negative voltage is applied to the anode and
a positive voltage to the cathode, the SCR is in
reverse blocking mode, making J1 and J3 reverse
biased and J2 forward biased.
 The device behaves as two reverse-biased diodes
connected in series. A small leakage current flows.
 This is the reverse blocking mode. If the reverse
voltage is increased, then at critical breakdown level,
called the reverse breakdown voltage (VBR), an
avalanche occurs at J1 and J3 and the reverse current
increases rapidly.
 Forward blocking mode
• In this mode of operation, the anode (+) is given a positive
voltage while the cathode (−) is given a negative voltage,
keeping the gate at zero (0) potential i.e. disconnected.
• In this case junction J1 and J3 are forward-biased,
while J2 is reverse-biased, allowing only a small leakage
current from the anode to the cathode.
• When the applied voltage reaches the breakover value
for J2, J2 undergoes avalanche breakdown.

• At this breakover voltage J2 starts conducting, but below

breakover voltage J2 offers very high resistance to the
current and the SCR is said to be in the off state.
 When the anode is made positive with respect the cathode
junctions j1 and j3 are forward biased and junction j2 is
reverse biased.
 With anode to cathode voltage being small, only
leakage current flows through the device. The SCR is
then said to be in the forward blocking state.
 If VAK is further increased to a large value, the
reverse biased junction will breakdown due to
avalanche effect resulting in a large current through
the device.
 The voltage at which this phenomenon occurs is called
the forward breakdown voltage (VBO)
 Once the SCR is switched on, the voltage drop across
it is very small, typically 1 to 1.5V.
 Forward conduction mode
 An SCR can be brought from blocking
mode to conduction mode in two ways:

 Either by increasing the voltage

between anode and cathode beyond the
breakover voltage,

 or by applying a positive pulse at the

gate.

 Once the SCR starts conducting, no

more gate voltage is required to
maintain it in the ON state
(i) Forward blocking mode
(ii) Forward conduction mode
(iii) Reverse blocking mode
V-I Characteristics of SCR
Effects on gate current on forward
blocking voltage
• LATCHING CURRENT (IL)
Latching current is defined as the minimum value of anode
current which must be attained during turn on process of
SCR to main the conduction even when gate current is
removed.
It associated with turn on and is usually greater than holding
current
• HOLDING CURRENT (IH)
Holding Current is defined as the minimum value of
anode current below which it must fall for turning OFF
the SCR or Thyristor.
If the anode current is reduced below the critical holding
current value, the Thyristor cannot maintain the current
through it and turns OFF.
 Some of the major difference between latching and holding current is tabulated herein.

Sr.
Latching Current Holding Current
No.

It is related with turn on process of SCR or

1)      It is related to turn off process.
thyristor.

Minimum value of anode current below

Minimum current above which gate losses
2)      which it must fall to stop conducting in
its control.
forward direction.

Value of latching current is more than that

3)      It is less than latching current.
of holding current.

4)     
Latching current is generally 2 to 3 times
of the holding current.
Il =2 to 3 times Ih
TWO TRANSISTOR MODEL OF SCR
Derivation for anode current
General transistor equation is
IC= αIE + ICBO
For transistor 1
IC1= α1IE1+ ICBO1 ; IE1 = IA
Therefore IC1= α1IA+ ICBO 1 ----------------------------- Eq 1
For transistor 2
IC2= α2IE2+ ICBO2 ; IE2 = IK and IK = IA +
Therefore IC2= IαG2(IA + IG )+ ICBO2 -------------- Eq 2
IA= IC1 + IC2
IA=α1IA+ ICBO + α2(IA + IG )+ ICBO
1 2

 IC 2  I B1

 I A  2 I g ICBO1  ICBO 2
1   
1 2


 THYRISTOR: TURN ON METHODS
https://www.youtube.com/watch?v=h7cwYHhBBPA

Thyristor is turned ON by increasing the Anode

current,this can be accomplished by one of the
following ways
 Thermal Turn on or High Temperature Triggering
 Light (Radiation)Triggering
 High Voltage Triggering(Forward voltage
triggering)
 dv/dt Triggering
 Thermal Turn on or High Temperature
 The width of depletion layer of SCR decreases
with increase in junction temperature.

 In SCR when anode to cathode voltage is very

near its breakdown voltage, the device is
triggered by increasing the junction temperature.
 By increasing the junction temperature the reverse
biased junction collapses thus the device starts to
conduct.
 This type of turn on many cause thermal run
away and is usually avoided.
 Light Triggering
 For light triggered SCRs a special terminal is made

inside the inner P layer where the thyristor is

bombarded by energy particles such as neutrons or
photons instead of gate terminal.
 When light is allowed to strike this

terminal, free charge carriers are

generated.
 When intensity of light becomes more than a
normal value, the Thyristor starts conducting.
 This type of SCRs are called as LASCR
High Voltage (Forward voltageTriggering)
 In this mode, an additional forward voltage is applied between
anode and cathode.

 When the anode terminal is positive with respect to cathode(VAK)

, Junction J1 and J3 is forward biased and junction J2 is reverse
biased.

 No current flows due to depletion region in J2 is reverse biased

(except leakage current).

 As VAK is further increased, at a voltage VBO (Forward Break Over

Voltage) the junction J2 undergoes avalanche breakdown and so a
current flows and the device tends to turn ON(even when gate is
open)
 This type of turn on is destructive and should be avoided.
 dv/dt Triggering
 When the device is forward biased, J1 and J3 are

forward biased, J2 is reverse biased.

 Junction J2 behaves as a capacitor, due to the

charges existing across the junction.

 If voltage across the device is V, the charge by

Q and capacitance by C then,

 If voltage across the device is V, the charge by Q and
capacitance by C then,
ic = dQ/dt Q
= CV
ic = d(CV) /
dt= C. dV/dt + V. dC/dt
as dC/dt = 0
ic = C.dV/dt
 Therefore when the rate of change of voltage across
the device becomes large, the device may turn ON.
 A high value of charging current may damage the
Thyristor and the device must be protected against
high current.
 Gate Triggering
 This is most widely used SCR triggering method.

 Applying a positive voltage between gate and cathode can

Turn ON a forward biased Thyristor.

 When a positive voltage is applied at the gate terminal,

charge carriers are injected in the inner P-layer, thereby

reducing the depletion layer thickness.
 As the applied voltage increases, the carrier injection
increases, therefore the voltage at which forward break-over
occurs decreases
 Three types of signals are used
for gate triggering.

1. DC gate triggering
2. AC Gate Triggering
3. Pulse Gate Triggering
 DC gate triggering
 A DC voltage of proper polarity is applied between
gate and cathode ( Gate terminal is positive with
respect to Cathode).

 When applied voltage is sufficient to produce the

required gate Current, the device starts conducting.

 One drawback of this scheme is that both power and

control circuits are DC and there is no isolation
between the two.

 Another disadvantages is that a continuous DC signal has

to be applied. So gate power loss is high.
 AC Gate Triggering:-
 Here AC source is used for gate signals.
 This scheme provides proper isolation between
power and control circuit.
 Drawback of this scheme is that a separate
transformer is required to step down ac
supply.
 There are two methods of AC voltage
triggering namely R and RC Triggering
 3. Pulse Gate Triggering
 In this method the gate drive consists of a
single pulse appearing periodically (or) a
sequence of high frequency pulses.
 This is known as carrier frequency
gating.
 A pulse transformer is used for
isolation.
 The main advantage is that there is no need
of applying continuous signals, so the gate
losses are reduced.
Dynamic characteristics of scr
 Dynamic characteristics of SCR
 Dynamic characteristics are those which shows how
the anode current and anode voltage are varying with
time.
 Switching means transition from on to off or
transition from off to on state
 We study the dynamic characteristics of scr during
Turn On and Turn Off
 Dynamic or switching characteristics during turn on
 Dynamic or switching characteristics during turn off
 Turn On Time: Time during which the SCR
moves from forward blocking mode to forward
conduction mode is called the turn on time

 Turn Off Minimum time interval between the

instant at which anode current becomes zero and
device regains its forward blocking mode.
 Turn ON Time of SCR
 A forward biased thyristor can be turned on by applying
a positive voltage between gate and cathode terminal.
 But it takes some transition time to go from forward
blocking mode to forward conduction mode.
 This transition time is called turn on time of SCR.
 Turn on time can be subdivided into three small
intervals as delay time (td) rise time(tr), spread time(ts).
 Turn on characteristics
 Turn On Time:Time during which the SCR moves
from forward blocking mode to forward conduction
mode is called the turn on time.
 Turn on time is subdivided in to
1. Delay time(td)
2. Rise time(tr)
3. Settling time(ts)

Time Anode voltage Anode current Gate current

Delay time Va to 0.9Va Leakage current to 0.1 Ia 0.9 Ig to Ig

Rise Time 0.9Va to 0.1 Va 0.1 Ia to 0.9 Ia Ig

0.1 Va to forward leakage

Spread time 0.9 Ia to Ia Ig
voltage
Dynamic or switching characteristics during turn On
 Delay Time of SCR
 After application of gate current, the thyristor will
start conducting over a very tiny region.

 Delay time of SCR can be defined as the time

taken by the gate current to increase from 90% to
100% of its final value Ig.

 In anode current point of view, delay time is the

interval in which anode current rises from forward
leakage current to 10% of its final value.

 From anode voltage view and at the same time

anode voltage will fall from 100% to 90% of its
initial value Va.
Rise Time of SCR

 Rise time of SCR in the time taken by the

anode current to rise from 10% to 90% of its
final value.

 At the same time anode voltage will fall from

90% to 10% of its initial value Va.

 The power loss in this region is very high due to

high values of anode current and anode voltage
 Spread Time of SCR
• It is the time taken by the anode current to rise from
90% to 100% of its final value.
• At the same time the anode voltage decreases from
10% of its initial value to smallest possible value.
• In this interval of time conduction spreads all over the
area of cathode and the SCR will go to fully ON State.
• Spread time of SCR depends upon the cross-sectional
area of cathode.
 Turn OFF Time of SCR
 For turning off the SCR anode current must fall below the
holding current.
 After anode current fall to zero we cannot apply forward
voltage across the device due to presence of carrier charges
into the four layers.
 The charge carriers must be swept out or recombined for
proper turn off of SCR.
 So turn off time of SCR can be defined as the interval
between anode current falls to zero and device regains its
forward blocking mode.
 On the basis of removing carrier charges from the four
layers, turn off time of SCR can be divided into two time
regions,
Reverse Recovery Time.
Gate Recovery Time
 Reverse Recovery Time
 It is the interval in which change carriers remove from
J1, and J3 junction.

 At time t1, anode current falls to zero and it will continue

to increase in reverse direction with same slope (di/dt)
of the forward decreasing current.
 This negative current will help to sweep out the carrier
charges from junction J1 and J3.

 At the time t2 carrier charge density is not sufficient to

maintain the reverse current hence after t2 this negative

• The value of current at t2 is called reverse
recovery current. Due to rapid decreasing of
anode current, a reverse spike of voltage may
appear across the SCR. Total recovery time t3–

t1 is called reverse recovery time.

• After that, device will start to follow the applied
reverse voltage and it gains the property to
block the forward voltage.
 Gate Recovery Time
 After sweeping out the carrier charges from junction
J1 and J3 during reverse recovery time, there still

remain trapped charges in J2 junction which prevent

the SCR from blocking the forward voltage.
 This trapped charge can be removed by
recombination only and the interval in which this
recombination is done, called gate recovery time.
Dynamic or switching characteristics during turn off
 Turn off or commutation methods
The process of transfer of current from one path to
another is called turn off or commutation.

To turn OFF the conducting SCR the below conditions

must be satisfied.

 The anode or forward current of SCR must be

reduced to zero or below the level of holding
current.
 A sufficient reverse voltage must be applied across
the SCR to regain its forward blocking state.
.
 Turn off or commutation methods
There are mainly two techniques for Thyristor
Commutation:
 Natural commutation
 Forced commutation.
The Forced commutation technique is further divided
into five categories which are Class A, B, C, D, and E.
Below is the Classification:
Class A: Self commutation by resonating the load or Load
Commutation
Class B: Self commutation by LC circuit or Resonant-Pulse
Commutation
Class C: Complementary Commutation
Class D: Auxillary or Impulse Commutation
Class E: External Pulse Commutation
 Natural Commutation
 Natural Commutation occurs only in AC circuits, and it
doesn’t require any external circuit.
 When a positive cycle reaches to zero and the anode current
is zero, immediately a reverse voltage (negative cycle) is
applied across the Thyristor which causes the Thyristor to
turn OFF.
 Natural Commutation occurs in
AC Voltage Controllers,
Cycloconverters, and
Phase Controlled Rectifiers.
 Forced Commutation
 As there is no natural zero current in DC Circuits
Forced Commutation is used in DC circuits and it is
also called as DC commutation.

 It requires commutating elements like inductance

and capacitance to forcefully reduce the anode
current of the Thyristor below the holding current
value, that’s why it is called as Forced
Commutation.

 Mainly forced commutation is used in Chopper and

Inverters circuits. Forced commutation is divided
into five categories, which are explained below:
 Class A: Resonant or Load Commutation
This is also known as resonant commutation.

In this process of commutation, the forward current passing through

the device is reduced to less than the level of holding current of the
device. Hence, this method is also known as the current
commutation method.

The commutating components L and C are used in order to

turn off the SCR and values are selected such that the circuit
becomes under damped. 

When the load resistance of very small value is used, the

inductor L and capacitor C are connected in series with load. 

Similarly the load resistance of high value is used; the load

resistance is connected across capacitor.
 
Class A: Resonant or Load Commutation
When the input voltage is supplied to the circuit the
Thyristor will not turn ON, as it requires a gate pulse to
turn ON.

When the Thyristor turns ON, the current will flow

through the inductor and charges the capacitor to its
peak value or equal to the input voltage.

Now, as the capacitor gets fully charged, inductor

polarity gets reversed and inductor starts opposing the
flow of current.

Due to this, the output current starts to decrease and

reach to zero.

At this moment the current is below the holding current

of the Thyristor, so the Thyristor turns OFF.
As the SCR T1 is turned on, the charging
of capacitor is done through supply voltage Vdc. 

The polarity of capacitor is shown in the figure A. 

When a capacitor charges up to Vdc voltage, the
current passing through inductor L reverses.  

As the inductor current becomes less than the holding

current of the SCR T1, the SCR T1 is turned off. 

The turned off time of SCR depends upon resonance

frequency of the circuit which depends upon
commutating components L and C.
The class A commutation is also called as self –
commutation and it is used in the series inverter.
  
The class A commutation is used for up to 1 kHz
frequency because the cost of circuit increases
due to higher rating of inductor L and capacitor
C at low frequency.
 Class B: Self commutation by LC circuit or
Resonant-Pulse Commutation

Class B commutation is also called as Resonant-

Pulse Commutation.

There is only a small change between Class B and

Class A circuit.

In class B, LC resonant
circuit is connected in
parallel while in
Class A it’s in series.
 Class B cont..
When input voltage is applied the capacitor starts charging upto the input
voltage (Vs) and Thyristor remains reversed biased until the gate pulse is
applied.

When the gate pulse is applied, the Thyristor turns ON and the current start
flowing from two paths

The constant load current flows through the resistance and thyristor
connected in series..

The charging current flows through the inductor and thyristor to charge the
capacitor with the reverse polarity.

Hence, a reverse voltage appears across the Thyristor, which causes the
current Ic (commutating current) to oppose the flow of the anode current IA.

Therefore, due to this opposing commutating current, when the anode

current is getting lesser than the holding current, Thyristor turns OFF.
 Class C: Complementary Commutation
Class C commutation is also called as complementary
Commutation. There are two Thyristors, one is main
(T1) and another is auxiliary(T2).
Initially, both the Thyristors are in OFF condition and the
voltage across capacitor is also zero.

Now, as the gate pulse is applied to the main Thyristor, the

current will start flowing from two paths, one is from R1-T1 and
second is R2-C-T1.

Hence, the capacitor also starts charging to the peak value

equal to the input voltage with the polarity of plate B positive
and plate A negative.

Now, as the gate pulse is applied to the Thyristor T2, it turns

ON and a negative polarity of current appear across the
Thyristor T1 which cause T1 to get turn OFF.

And, the capacitor starts charging with the reverse polarity.

Simply we can say that when T1 turns ON it turns OFF T2 and
as T2 turns ON it turns OFF T1.
 Class D: Impulse Commutation or Voltage
commutation
Class D commutation is also called as Impulse
Commutation or Voltage Commutation. Here, diode,
inductor, and auxiliary Thyristor form the commutation
circuit.
Class-D Commutation is a commutation method used to
turn off thyristor in a DC circuit by the application of a
sudden reverse voltage across the terminals of SCR.
This is the reason, it is also called Impulse Commutation.

Initial Circuit Condition:

Main Thyristor T1 and Auxiliary Thyristor T A are in OFF

state.

Capacitor C is charged up to source voltage Vs with its

upper plate positively charged.
With the above initial condition, when main SCR T1 is
fired or gated at t=0, main thyristor T1 becomes ON and
load is connected to the source through T1 and hence,
load current I0 starts flowing.

Another circuit comprising of Capacitor C, T1, L and D is

formed. This circuit is a resonating circuit. A resonating
current ic starts flowing through this circuit.

Due to the flow of the resonating current, capacitor C

starts to charge in opposite direction.

Due to this resonating current, the current through main

thyristor T1 at any instant of time is equal to the sum of
load current I0 and ic i.e. (I0+ic). 
From the above current waveform,
it is clear that after t = (π / ω0), the resonating current
becomes zero and Capacitor C gets fully charged up to
source voltage Vs but in opposite direction.

This means, after t = (π / ω0), lower plate of capacitor is

positive while the upper plate is negative.

It should also be noted that, after t = (π / ω 0), as the

diode D gets reversed biased, no resonating current will
flow.

This means, the current flowing through the main

thyristor will become I0. This is the reason, ic is shown
zero after t = (π / ω0).
To turn off main thyrsistor T1 the auxiliary thyristor TA
is fired at t=t1.

As soon as auxiliary thyristor TA gets ON, a sudden

reverse voltage equal to the capacitor voltage is
impressed across the main SCR T1.

Due to this, the current through main SCR reverses

momentarily to recover the stored charges.

Due to this recovery of stored charges, the current

through the main SCR T1 gets quenched and it gets
turned OFF.
Once main thyristor T1 gets OFF, constant load current
starts flowing through Capacitor C and Auxiliary Thyristor
TA (as it is still ON).

Due to this load current, the capacitor gets charged from

–Vs to +Vs. As the load current is constant, this charging
of capacitor from –Vs to +Vs is linear.

When capacitor charges to +Vs, it will not allow any

further flow of load current.

Thus current through Auxiliary Thyristor TA becomes

zero and it gets turned OFF. During the time TA is ON i.e.
from t=t1 to t=t2,
Class-D commutation is also known as Auxiliary
Commutation due to the fact that Auxiliary Thyristor
is used for the commutation of main thyristor.

When auxiliary thyristor is ON, capacitor gets

connected across the terminals of main thyristor,
therefore this method of commutation is also called
Parallel Capacitor Commutation.
 Class E: External Pulse Commutation
Class-E Commutation is one of the forced
commutation method to turn off an SCR / Thyristor.

Class E commutation is also called External Pulse

Commutation.

An external current pulse is used in this technique to

commutate SCR. This is the reason, Class-E
commutation is also known as External Pulse
Commutation. 

This external current pulse is obtained form a

separate voltage source. 
Class E: External Pulse Commutation

The Thyristor is already in forward bias. So, as

we trigger the Thyristor, the current will appear
at the load.
•Figure shows the circuit for commutation of the SCR T1 by using
pulse transformer. 
•The secondary of the pulse transformer is connected in series with the
load. 
•When the SCR T1 is turned on by gate pulse, the load current is
flowing through secondary of pulse transformer and load. 
•When a pulse is given to primary of the pulse transformer, the voltage
across secondary of pulse transformer -Vdc provides reverse voltage
across SCR T1 resulting SCR T1 is turned off. 
•The voltage drop across capacitor is very low because frequency of
the pulse transformer is very high. 
•The voltage drop across capacitor is hardly 1.0 Volt. 
•The following points to be noted while designing pulse transformer.
The efficiency of external pulse commutation is very high due to low
energy requires.