Biasing an Amplifier

Biasing an Amplifier
A transistor has three connections (collector, base and emitter), whilst
the input and output of an amplifier circuit each require two
connections, making four in total, therefore one of the transistor’s
three connections must be common to both input and output.
Whether collector, base or emitter is chosen as being common to both
input and output has a marked effect on how a transistor amplifier
operates.
This section describes how the transistor is biased in common emitter
mode, the most commonly used of the three connection modes for
voltage amplifiers.
Comparison of CB, CE and CC amplifiers
 Biasing an Amplifier
Biasing is an important issue in amplifiers and refers to setting the
initial state of the amplifier before a signal is received.
In transistor amplifiers, the type of biasing determines the initial dc
values of the
1. base current, IB,
2. the collector current IC
3. and the collector to emitter voltage VCE
 Dc load line

A dc load line is a graph that shows all the possible combination of Ic

and Vce for a given amplifier.
It shows how Ic varies with VCE between Ic (SAT) and VCE (cut-off).
Draw the load line for the circuit
 The Q-point
The Q-point or quiescent point is the resting state of an amplifier.
The Q-point indicates the state of the amplifier when there is no input signal.
Proper biasing of amplifier involves selecting a Q-point which will be at the
centre of the load line.
When the Q point is at the centre of the load line, the transistor is said to be
midpoint bias.
Midpoint biasing allows the output signal to swing equally above and below the
bias level.
 Base bias analysis

The analysis of a transistor amplifier involves determining the

Q – point values of Ic and VcE, that is IcQ and VcEQ.
In the base bias amplifier, this is done by following the steps
Example
i. Find the Q point values of Ic and VcE for the circuit
ii. Draw the load line
Application
The base bias circuit is used for designing switching circuits

Advantage
The main advantage of this circuit is its simplicity in design.

Disadvantage
1. it is hFE or beta dependent. Since a variation of hFE causes a change in
both ICQ and VCEQ, a circuit using base bias will produce a distorted output
if the transistor is replaced with another transistor.
2. it is not thermally stable. As Ic increases, the transistor heats. An
increase in temperature will result in an increase of hFE to a point. When
hFE increase IC will increase and the cycle continues
 Self Assessment
Design the DC fixed bias conditions for the simple class A common
emitter amplifier shown in Figure below, assuming a supply voltage
(Vcc) of 15V using a transistor with a common emitter current gain (hfe)
of 180.
Voltage Divider Bias
 Voltage Divider Bias
Voltage divider bias is the most widely used biasing method.
This is because it has the stability of the emitter bias circuit and yet does not
require dual polarity power supply. It is not also hFE dependent
At junction A, there are two paths for the current to ground: one
through the base emitter region and the other through R2

Thus, R2 is in parallel with the input resistance at the base Rin(base)

If two Resistors are in parallel, much of the current will flow through the
smallest resistor and if one is at least 10 times the other, all the current can
be assumed to be flowing through the smallest resistor.
This principle must be considered when analyzing voltage divider circuits.
  
Analysis of voltage divider circuit

•1.  Check to find out if R can be ignored. Note that RIN(base) is ignored if
IN (base)

2. Find VB ,

3. Find emitter voltage VEAssuming VBE = 0.7V

4. Find emitter current IE by apply ohms law at the emitter

With these values, all other circuits values including I C and VCE can now be
determined.
 
Applying KVL to the base region

  Applying KVL to the collector-emitter region

 Example
 

𝑉 𝐸=𝑉 𝐵 − 𝑉 𝐵𝐸 =2.17 −0.7=1.47 𝑉

 

 𝑉 =𝑉 𝐶𝐶 − 𝐼 𝐶 ( 𝑅 𝐶 + 𝑅 𝐸 )
𝐶𝐸

¿ 12− 0.00313 ( 1000+470 ) =7.4 𝑉

 
  

3
  16.92 ×10
 
∴ 𝑉 𝐵= ( 3
16.92× 10 +56 ×10)3
×15=3.48 𝑉
  𝑉𝐸 2.78
𝐼 𝐶𝑄 =𝐼 𝐸 = = =0.00126=1.26 𝑚𝐴
Since Rin (base) is less than 10 times R2, 𝑅 𝐸 2.2 ×10 3

then we must consider Rin (base) when

finding VB  
Next lecture
• Decibels
• Power Amplifiers