Professional Documents
Culture Documents
Ultralow Noise Miniature External Cavity Semiconductor Laser
Ultralow Noise Miniature External Cavity Semiconductor Laser
Ultralow Noise Miniature External Cavity Semiconductor Laser
MINIATURE EXTERNAL
CAVITY SEMICONDUCTOR
LASER
CONTENTS
• INTRODUCTION
• SEMICONDUCTOR LASER
• EXTERNAL CAVITY LASER
• ULTRALOW NOISE MINIATURE EXTERNAL CAVITY SEMICONDUCTOR
LASER
• EXPERIMENT
• CONCLUSION
• REFERENCE
• Lasers with high spectral purity, in form factors that are small and insensitive
to environmental perturbations.
RF carrier frequency is kept at 8.7 GHz, resolution bandwidth is 300 kHz and video bandwidth is 3 kHz. The noise floor is determined by Johnson–Nyquist noise of the
photodiode. Inset
(a): linewidth measurement performed with 30-Hz-resolution bandwidth. Points stand for the experimental data
. Continuous red line is a 60-Hz Lorentzian fit of the data. Inset
(b): comparison of the RF spectra generated by beating of two self-injection locked lasers (curve (2)) and one injection locked and one free running lasers (curve (1)).
LEARN . GROW . EXCEL
Continued……
• This demonstrates that self injection locking improved the DFB laser
linewidth by nearly seven orders of magnitude.
• To find out which factors limit the performance of the laser .The
spectral density of the thermo refractive frequency noise is found
from