Power Electronics

Course Code: EEE-338

Fully controlled Devices
 MOSFET VERSES BJT

• Voltage controlled device input

• BJT is current controlled
device requires continuous
gate current.
• Minority carrier device and
has negative resistance
coefficient.
• Paralleling devices is difficult.
• On state power loss Vce*Ic is
low.
• Turn off time is higher.
power requirements for
MOSFET are less.
• Majority carrier device and has
positive resistance coefficient.
• Paralleling the devices is
possible.
• Id^2 * Rdson is more than the
on losses compared to BJT.
• Very fast device and low
switching losses.
IGBT

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 IGBT
• Major difference compared to MOSFET structure is addition of a p+
injecting layer
• This layer forms a PN junction with drain layer and injects minority
carriers into it
• Lightly doped n- region is called the drain drift region.
• Drift region improves blocking voltage capability of the device
without much increasing the size of the device
 IGBT

• IGBT is a hybrid device which combines the advantages of MOSFET

and BJT.
• From the operational point of view an IGBT is a voltage controlled
bipolar device.
• The operational equivalent circuit of an IGBT has an n channel
MOSFET driving a p-n-p BJT.
•
• When the gate-emitter voltage of an IGBT is below threshold it
operates in the cut off region.
• The IGBTs have a slightly positive temperature coefficient of the on-
state voltage drop which makes paralleling of these devices simpler
• An IGBT does not exhibit second break down phenomena as in the
case of a BJT.
 IGBT

 N+ layer between P+ drain and N- drift layer N+ layer is not essential for
the operation of IGBT.
 Punched through IGBT has low negative voltage blocking capability due
to heavy doping of P+ and N+ layers.
 Turn on of the IGBT is the same as Power MOS the rate at which we
charge the input capacitance Cgs determine the turn on.
 But in turn of there are majority carries form N-to P+ and also minority
carries from P+ to N- turn off losses will high.
 PT IGBT has small tail current but less blocking voltage capability.
 IGBT is device which has all good qualities of BJT and MOS except
increase in turn off time.
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 IGBT
 The IGBT has the output switching and conduction characteristics
of a bipolar transistor but is voltage-controlled like a MOSFET it
has the advantages of high-current handling capability of a bipolar
with the ease of control of a MOSFET.
 Insulated gate same as MOS device principle at the input is same

that when Vge >Vth Nchannel is formed flow of electrons from N+

to N-.
 When Vce applied holes from P+ region move to N- some electrons

recombine with hole and rest collected at source due to this P+

junction it can block negative voltage.
 Power MOS had built in body diode but IGBT itself dont have but

the module has the recovery diode matched to its switching

requirements.
 IV characteristics matches to a BJT except for the control signal is

Vge during conduction Rdson is lower.

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 IGBT

 IGBT are in pairs in a power module which have the body diode
built in, which matched the switching chracteristics of IGBT not
like the inherent body diode in Power MOS.
 These modules require a driver circuit and protection circuit.

 But due to advancement in the semiconductor technology Smart

Power Module are available.

 These smart power modules have driver circuit over temprature

protection ,over current protection over voltage protection.

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 Wide band-gap (WBG) Devices
• Si devices are limited to operate at junction temperature below 200 ᵒC
• Si power devices are not suitable at very high frequencies
• Larger energy gaps allow higher power and temperature and the
generation of more energies (i.e. photons)
• SiC and GaN offer the potential to overcome both temperature,
frequency and power management limitations of Si
 Wide band-gap (WBG) Devices
• Lower on state resistance

• Faster switching speed

• Higher operating temperatures

• Better thermal conductivity

• Smaller size

• Highly reliable and rugged

WBG Devices
WBG Devices
THANK YOU