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MOS Characterstics: Presented by P Jaswanth
MOS Characterstics: Presented by P Jaswanth
By
P Jaswanth
KeyPoints
• As Vg increases, electron density in the channel increases, the resistance between source and drain
decreases(channel resistance)
• Here the channel resistance is controlled by mainly gate.
• The gate current Ig is zero(Ig=0)
• If thickness is decreased the capacitance of the
device decreases therefore electron density
increases(Q=CV)
Width significance
• If Vds<<2(Vgs-Vth)
Id=UnCoxW/L[(Vgs-Vth)Vds
Ron=1/ UnCoxW/L[(Vgs-Vth)]
• Electronically adjustable resistor.A MOSFET can act as voltage
dependent resistor if Vds<<2(Vgs-Vth)
• Ron becomes infinity as Vgs=Vth
• Mos device can act as a switch in this region (linear or triode
region)
Id for Vds>Vgs-Vth
Drain characterstics
• Here Vgs is kept constant and Vds,Id are varied for different variables and are plotted
• For different Vgs values the characterestics are plotted
• As the Vds increases the effective length decreases ,as the resistance is proportional to length,overall
resistance decreases and the current Id increases that doesn’t stay on constant
Transfer Characterstics
• Here Vds is kept constant and Vgs,Id variables are plotted for different values