Department of Physics

Field Effect
Guru Jambheshwar University of Science
& Technology Hisar
Transistor
(FET)
ANKITA SHARMA

16073010

M.SC PHYSICS
 The METAL OXIDE SEMICONDUCTOR field effect
transistor is a transistor used for amplifying or switching
MOSFET electronic signals. It is a four terminal device the Drain,
Source, Gate and The Body.  
The
Classifications
Symbols 
 MOSFET
structure
It is a four-terminal device with source(S),
gate (G), drain (D) and body (B)
terminals. The body is frequently
connected to the source terminal,
reducing the terminals to three. It works
by varying the width of a channel along
which charge carriers flow (electrons or
holes).
The charge carriers enter the channel at
source and exit via the drain. The width
of the channel is controlled by the
voltage on an electrode is called gate
which is located between source and
drain. It is insulated from the channel
near an extremely thin layer of metal
oxide
Working of MOSFET
The drain and source are heavily doped
n+ region and the substrate is p-type.
The current flows due to the flow of
negatively charged electrons, also
known as n-channel MOSFET. When we
apply the positive gate voltage the
holes present beneath the oxide layer
experience repulsive force and the
holes are pushed downwards in to the
bound negative charges which are
associated with the acceptor atoms.
The positive gate voltage also attracts
electrons from n+ source and drain
region in to the channel thus an
electron reach channel is formed. e is in
n-type.
 DE-MOSFET
Since gate is negative, it means electrons are on the
gate as shown.

These electrons repel the free electrons in the n-

channel, leaving  a layer of positive ions in a part
of the channel as shown ,In other words, the n-
channel is depleted of some of its free electrons.
Therefore, lesser number of free electrons are
available for current conduction through the n-
channel. This is same as increasing the channel
resistance.
The greater the negative voltage on the gate, the
lesser is the current from source to drain.
Thus by changing the negative voltage on the
gate, we can vary the resistance of the n-channel
and hence the current from source to drain.
As the action with negative gate depends upon
depleting the channel of free electrons, the
negative-gate operation is called depletion mode.
 EN-MOSFET
Again the gate acts like a capacitor. Since the
gate is positive, it induces negative charges in
the n-channel as shown i.
These negative charges are the free electrons
drawn into the channel.
Because these free electrons are added to those
already in the channel, the total number of free
electrons in the channel is increased.
Thus a positive gate voltage enhances or
increases the conductivity of the channel.
The greater the positive voltage on the gate,
greater the conduction from source to drain.
Thus by changing the positive voltage on the
gate, we can change the conductivity of the
channel.
Because the action with a positive gate depends
upon enhancing the conductivity of the channel,
the positive gate operation is called
enhancement mode.
How MOSFET A thin layer of metal oxide is deposited over left side of
is different the channel. A metallic gate is deposited over the oxide
layer. As silicon dioxide is an insulator, therefore a gate is
from JFET ??  insulated from the channel. For this reason MOSFET is
sometimes called insulated gate field effect transistor.
There is only single p region. This is called substrate.
Advantages  Operation depends upon only one type of charge carriers i.e.
unipolar device.
 MOSFETs are simpler and less expensive to fabricate than the BJTs.
 In digital circuits, power requirement is an important criterion. FET
digital circuits need much less power compared to BJT circuits.
 An FET is essentially a voltage operated device. But a BJT is current
operated device. Since most of signals to be processed are voltage
signals, FETs are better than BJTs.
 Source and drain are interchangeable in most cases.
 Very high input impedance. 
 Low frequency application.
 Low power consumption (low current low voltage).
 Less noisy as compared to BJT.
 Self-limiting device. 
 Very small in size. 
Disadvantages  A de-MOSFET can be operated in the enhancement
of MOSFET over mode (by simply applying a positive voltage VGS, if the
JFET  device in n-channel ). but it is impossible to operates
a JFET in enhancement mode. If we attempt to Apply
positive voltage VGS(in case of n-channel JFET ),the
gate channel junction becomes forward biased. As a
result the gate ceases to control the channel.
 Even if a JFET is operated with a reverse bias, the gate
current (caused by the flow of minority carriers is
much larger than that in a comparable MOSFET.
APPLICATION OF MOSFET
MOSFET is used for switching and amplifying electronics signals in the
electronic devices.

It is used as an inverter.

It can be used in digital circuit.

MOSFET can be used as a high frequency amplifier.

It can be used as a passive element e.g. resistor, capacitor and 

inductor.

It can be used in brushless DC motor drive.

It can be used in electronic DC relay.

It is used in switch mode power supply (SMPS).

THANKYOU