Bipolar Junction Transistors (BJT)

NPN PNP
1
 Description
• Three layer – two junction.
• Two n or two p sandwiched.
• Bipolar indicates current flow in device due
to movement of both holes and electrons.
• Three terminals (collector, emitter & base).
• npn usage is wide in high power
applications.

2
 BJT Cross-Sections

Emitter

Collector

NPN PNP
3
 Common-Emitter NPN Transistor
Reverse bias the CBJ

Forward bias the BEJ

4
 Input Characteristics

• Resembles a diode
curve.
• Plot IB as f(VBE, VCE)
• As VCE increases, more
VBE required to turn the
BE on so that IB>0.
• Looks like a pn
junction volt-ampere
characteristic.

5
 Output Characteristics

• Plot IC as f(VCE, IB)

• Cutoff region (off)
– both BE and BC
reverse biased
• Active region
– BE Forward biased
– BC Reverse biased
• Saturation region (on)
– both BE and BC
forward biased

6
Transfer Characteristics

7
Large-Signal Model of a BJT

KCL >> IE = IC + IB
βF = hFE = IC/IB
IC = βFIB + ICEO
IE = IB(1 + βF) + ICEO
IE = IB(1 + βF)
IE = IC(1 + 1/βF)
IE = IC(βF + 1)/βF

8
I E  I B  IC
IC
 F  hFE 
IB
I C   F I B  I CEO
I E  I B (1   F )  I CEO  I B (  F  1)
 1  F 1
I E  I C 1    IC
 F  F
IC   F I E
F F
F   F 
F 1 1F
9
Model with Current Gain

10
 Miller Effect

iout
vbe vce

11
 Miller Effect (continued)

d d
iout  Ccb (vbe  vce )  Ccb (vbe  Avbe )
dt dt
d d
iout  Ccb  [1  A]vbe   Ccb [1  A]  vbe 
dt dt
Ccb  Ccb [1  A]

12
 Miller Effect (continued)

• Miller Capacitance, CMiller = Ccb(1 – A)

– since A is usually negative (phase inversion),
the Miller capacitance can be much greater
than the capacitance Ccb
• This capacitance must charge up to the
base-emitter forward bias voltage, causing
a delay time before any collector current
flows.

13
Transistor Switching Times

14
 Switching Times – turn on

• Input voltage rises from 0 to V1

• Base current rises to IB1
• Collector current begins to rise after the
delay time, td
• Collector current rises to steady-state value
ICS
• This “rise time”, tr allows the Miller
capacitance to charge to V1
• turn on time, ton = td + tr
15
 Switching Times – turn off

• Input voltage changes from V1 to –V2

• Base current changes to –IB2
• Base current remains at –IB2 until the Miller
capacitance discharges to zero, storage
time, ts
• Base current falls to zero as Miller
capacitance charges to –V2, fall time, tf
• turn off time, toff = ts + tf
16