Unijunction Transistor (UJT)

Base 2
B2

E
Emitter
B1

Base 1 Schematic Symbol

Basic Structure
Unijunction Transistor (UJT)
RB1 = dynamic resistance
B2 of the silicon bar
between the emitter
and base 1.
RB2
E RB1 varies inversely with
emitter current IE , and
RB1 therefore it is shown as a
variable resistor.
B1
Range of RB1 : several
Equivalent Circuit
thousand ohms down to tens
Unijunction Transistor (UJT)

B2

RB2 RB2 = dynamic resistance

E between the emitter
and base 2
RB1

B1
Equivalent Circuit
Unijunction Transistor (UJT)

B2 The total resistance

betweem the base
RB2 terminals is known as
interbase resistance RBBO ,
E
i.e.
RB1
RBBO  RB1  RB 2
B1
Equivalent Circuit
Unijunction Transistor (UJT)

B2 The ratio of RB1 to the

interbase resistance is called
RB2 the standoff ratio, .
E
RB1 RB1
RB1  
RB1  RB 2 RBBO
B1
Equivalent Circuit
Unijunction Transistor (UJT)

If the device is biased as shown in the following

figure, the voltage across RB1 is;

 RB1 
VRB1   VBB  VBB
 RBBO 
Unijunction Transistor (UJT)
B2

RB2
IE + VD -
V BB
+ +

RB1 VBB
VE I E 0

- B1 -
Unijunction Transistor (UJT)

As long as VE is less than VBB +VD, there is no

emitter current (except a very small leakage
current in A known as IEO) because the pn
junction is not forward-biased. The level of
emitter voltage that causes the pn junction to
become forward-biased is called VP (peak-point-
voltage):
VP  VBB  VD
Unijunction Transistor (UJT)

Once VE reaches VP , IE begins to flow (UJT turns

on) – conductivity increases and RB1 decreases.
After turn-on, the UJT operates in a negative
resistance region (VE decreases as IE increases)
up to a certain level of IE . Beyond this level, VE
begin to increase again. The minimum level of
VE is known as valley point (VV , IV). Beyond this
point, the device enters its saturation region.
Unijunction Transistor (UJT)

For fixed values of  and VD, the magnitude of VP

will vary as VBB i.e.

VP  VBB  VD

Fixed
Unijunction Transistor (UJT)
Application

• Trigger device for SCR’s and triac

• Nonsinusoidal (relaxation) oscillators,

• Sawtooth generators

• Phase control

• Timing circuits
Unijunction Transistor (UJT)
Application – relaxation . +V BB

oscillator
R1
When the dc voltage
VE
+VBB is applied, C C charges
UJT off
charges through R1
. VR2
and VE increases C
R2
exponentially towards
+VBB. During this
period, the UJT is off.
Unijunction Transistor (UJT)
Application – relaxation . +V BB
oscillator
R1
When VE reaches VP, the VE
UJT turns on and provides
UJT on
a discharge path for the
capacitor C. The C
. VR2
C discharges
discharge is rapid since R2 V BB

R2
is small – causing a
voltage spike across R2. V R 2b
Unijunction Transistor (UJT)
Application – relaxation oscillator

Towards the end of the discharge process, the

current IE decreases to a level that causes the
UJT to turn off and hence the charging process
restarts. The charge and discharge cycle
produces the waveforms shown in the following
figure. The output VR2 can be used to trigger an
SCR or a triac in the AC power control circuit.
V R 2A

V R 2B
Unijunction Transistor (UJT)
Relaxation oscillator – . +V BB
mathematical analysis
R1
Fixing the value of R1.
VE
The value of R1 is crucial
in ensuring that the UJT . VR2
C
can turn on and of.
R2
Unijunction Transistor (UJT)

VBB  VE
VE  VBB  R1 I R1 R1 
I R1
At the peak point, in order to switch the UJT
to conduction mode, VE and IE must increase
to VP and IP respectively.
Unijunction Transistor (UJT)
Hence;
VBB  VP
R1 
IP

On the other hand, in order to switch off the UJT

at the end of the discharging period, VE and IE
must reduce to VV and IV respectively.
Hence;
VBB  VV
R1 
IV
Unijunction Transistor (UJT)

Thus, UJT will switch on and off if the value of R1

lies within the following range;
VBB  VV VBB  VP
 R1 
IV IP