Professional Documents
Culture Documents
Mosfet Biasing Techniques
Mosfet Biasing Techniques
Zero Bias –is a popular biasing technique that can be used only with depletion-
type MOSFETs.
This form of bias is called zero bias because the potential difference between the
gate-source region is zero.
Since there is no current in the gate circuit,
no voltage is developed across RG, and
VGS=0
Therefore ID=IDSS, and
VDs=VDD-IDRD.
Note that the value of RD is normally
chosen so that
IDSS Rd =0.5VDD
(which midpoint biases the circuit).
D-MOSFET SELF BIAS
Self-bias is the most common type of biasing method for JFETs. Notice there is
no voltage applied to the gate. The voltage to ground from here will always be
VG = 0V. However, the voltage from gate to source (VGS) will be negative for n
channel and positive for p channel keeping the junction reverse biased. This
voltage can be determined by the formulas below. ID = IS for all JFET circuits.
3
D-MOSFET BIASING
• ID=IDSS(1-VGS/VP)2
• VGS=VG-IDRS
• Where VG=R2xVDD/(R1+R2)