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Group 7 Transistor
Group 7 Transistor
Group 7 Transistor
INTRODUCTION
• If two individual signal diodes are joined togehter back-to-back, this will
give us two PN-junctions connected together in series which would share a
common Positve, (P) or Negative, (N) terminal. The fusion of these two
diodes produces a three layer, two junction, three terminal device forming the
basis of a Bipolar Junction Transistor, or BJT for short.
A BIPOLAR JUNCTION TRANSISTOR
• The Bipolar Transistor basic construction consists of two PN-junctions producing three
connecting terminals with each terminal being given a name to identify it from the other
two. These three terminals are known and labelled as the Emitter ( E ), the Base ( B ) and
the Collector ( C ) respectively.
• Bipolar Transistors are current regulating devices that control the amount of current
flowing through them from the Emitter to the Collector terminals in proportion to the
amount of biasing voltage applied to their base terminal, thus acting like a current-
controlled switch. As a small current flowing into the base terminal controls a much larger
collector current forming the basis of transistor action.
• The principle of operation of the two transistor types PNP and NPN, is exactly the same the
only difference being in their biasing and the polarity of the power supply for each type.
• Transistors are three terminal active devices made from different
semiconductor materials that can act as either an insulator or a conductor by
the application of a small signal voltage. The transistor’s ability to change
between these two states enables it to have two basic functions: “switching”
(digital electronics) or “amplification” (analogue electronics). Then bipolar
transistors have the ability to operate within three different regions:
• Active Region – the transistor operates as an amplifier and Ic = β*Ib
• Saturation – the transistor is “Fully-ON” operating as a switch and
Ic=I(saturation)
• Cut-off – the transistor is “Fully-OFF” operating as a switch and I
Transistor Symbols
• There are two types of transistor, namely NPN transistor and PNP
transistor. The transistor which has two blocks of
n-type semiconductor material and one block of
P-type semiconductor material is known as NPN transistor.
Similarly, if the material has one layer of N-type material and two
layers of P-type material then it is called PNP transistor
• The NPN transistors comes with three layers i.e. two N-doped layers
and one P-doped layer. The P-doped layer is sandwiched between two
N-doped layers. In NPN transistors, conduction is carried out by both
charge carriers i.e. electrons and holes, however, electrons are major
charge carriers in NPN transistors.
• Similarly, PNP transistors comes with three layers i.e. two P-doped
layers and one N-doped layer. The N-doped layer exists between two
P-doped layers. Actually, N-doped layer is responsible for triggering
transistor action. When a proper bias voltage is applied at the P-doped
layer, it draws current which is then used to control large current at
other terminals.
•The symbol of NPN and PNP is shown in the figure below.
• The field-effect transistor (FET) is a type of transistor that uses an electric field to control
the flow of current in a semiconductor. FETs are devices with three terminals: source, gate,
and drain. FETs control the flow of current by the application of a voltage to the gate, which
in turn alters the conductivity between the drain and source.
• The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their
input terminal, called the Gate to control the current flowing through them resulting in the
output current being proportional to the input voltage. As their operation relies on an electric
field (hence the name field effect) generated by the input Gate voltage, this then makes the
Field Effect Transistor a “VOLTAGE” operated device.
FIELD EFFECT TRANSISTORS (FET)
• The field effect transistor is a three terminal device that is constructed with no PN-junctions
within the main current carrying path between the Drain and the Source terminals. These
terminals correspond in function to the Collector and the Emitter respectively of the bipolar
transistor. The current path between these two terminals is called the “channel” which may
be made of either a P-type or an N-type semiconductor material.
• The control of current flowing in this channel is achieved by varying the voltage applied to
the Gate. As their name implies, Bipolar Transistors are “Bipolar” devices because they
operate with both types of charge carriers, Holes and Electrons. The Field Effect Transistor
on the other hand is a “Unipolar” device that depends only on the conduction of electrons
(N-channel) or holes (P-channel).
• There are two main types of field effect transistor, the Junction Field Effect Transistor or
JFET and the Insulated-gate Field Effect Transistor or IGFET), which is more commonly
known as the standard Metal Oxide Semiconductor Field Effect Transistor or MOSFET for
short.
Applications of Transistor
• Transistors are mainly used for the amplification of low and high-
frequency AC signals.
• No current is produced at the collector terminal unless there is a
current at the base terminal. This process allows the transistor to
work as a switch. The transistor can be turned ON and OFF by
controlling the bias voltage at the base terminal.
• Based on requirements, a transistor can be made to operate in cut-off
or saturation region for switching applications.
• Integrated circuits added in the development of the processors are made
from transistors.
• Used in the development of logarithmic converters and logic gates.
• Transistors are widely used in modern electronics especially where
signal processing and radio transmission is required.
TRANSISTOR OPERATION:
AMPLIFICATION
TRANSISTOR AS AN AMPLIFIER
• Ro=o
• Where Ro = Output resistance, VCE = Collector-emitter voltage, and
IC = Collector-emitter voltage.
CURRENT GAIN
• The gain in terms of current when the changes in input and output
currents are observed, is called as Current gain. By definition, it is
the ratio of change in collector current (ΔIC) to the change in base
current (ΔIB).
• Current gain, β=ΔI/ΔIB
• The value of β ranges from 20 to 500. The current gain indicates
that input current becomes β times in the collector current.
POWER GAIN
• The phototransistor concept was known for the past many years. The first idea was proposed by
William Shockley in the year 1951, after the discovery of a normal bipolar transistor. After two
years, a phototransistor was demonstrated. After that, it was used in different applications, and day
by day its development was continued.
CONSTRUCTION
• FET Phototransistor
This kind of phototransistor includes two terminals that connect inside through its
collector & emitter otherwise source & drain within FET. The transistor’s base
terminal reacts to light & controls the current flow among the terminals.
PHOTOTRANSISTOR CIRCUIT
The voltage from the primary circuit is applied to the power source to
produce a near-infrared light beam which travels across the closed
channel until it hits the photo sensor which converts the optical energy
to electrical energy. Once the light from the LED strikes the
phototransistor, it starts conducts the electricity depending on the state
and duration of light.
FACTORS THAT AFFECT OPTOI-SOLATOR
OPERATIONS
High humidity in the air may lead to arcing around the isolator or along
the surface of the circuit board, resulting to a conductive path and
possible short circuit around the opto-isolator.
ADVANTAGES OF OPTO-
ISOLATOR
• Providing electrical and physical isolation of two sections of a circuit
and hence the safety
• Minimizing noise susceptibility and EMI and reducing interference such
as from electrical interference
• Relatively small and inexpensive
• Ability to limit voltage across multiple circuits
• Provide isolation
DISADVANTAGES OF
OPTOISOLATOR