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Bipolar Junction Transistor
Bipolar Junction Transistor
01 Structure of BJT
02 Forward-Reverse Bias of BJT
03 Circuit Analysis of BJT
04 Condition in Cutoff and Saturation
05 Examples and Related Problems
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01Structure of BJT
• The basic structure of the bipolar junction transistor (BJT) determines its operating
characteristics. Semiconductive materials are used to form a BJT.
• The BJT is constructed with three regions: emitter, base, and collector.
• There two types of BJT: two n regions separated by a p region (npn), and two p
regions separated by an n region (pnp).
• The pn junction joining the base region and the emitter region is called the base-
emitter junction. The pn junction joining the base region and the collector region is
called the base-collector junction.
• Construction of BJT is shown in figure(a) and symbols of BJT are shown in figure(b).
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01 Cont’d
(a) (b)
(a) (b)
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04 Condition in Cutoff and Saturation
Condition in Cutoff
• A transistor is in the cutoff region when the base-emitter
junction is not forward-biased. Neglecting leakage current, all
of the currents are zero.
Condition in Saturation
• When the base-emitter junction is forward-biased and there
is enough base current to produce a maximum collector
current, the transistor is saturated.
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05 Examples and Related Problems
Examples >> 4-1, 4-2, 4-5, 4-6, 4-9, 4-10
Related Problems >> 4-1, 4-2, 4-5, 4-9, 4-10