Lecture (Contd.) : - MOS Regions of Operation

Lecture (Contd.
• MOS Regions of Operation
1. Weak Inversion Region
2. Moderate Inversion Region
3. Strong Inversion Region

Lecture (Contd.)
Threshold Voltage
When the oxide-Si interface potential reaches a sufficiently

positive value the majority carriers flow from the source to the
drain, thus channel is formed under the gate oxide and the
transistor ‘turns on’. The value of Vg(gate voltage) for which this
occurs is called the ‘threshold voltage’.
Lecture (Contd.)
Drain Current & Transconductance
Non Saturation Drain Current:

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Saturation Current:
Lecture (Contd.)
Transconductance Equation
Lecture (Contd.)
MOS Capacitances:
Lecture (Contd.)
MOS Capacitances( Contd.):

Second Order Effects
Short-channel effects occur in MOSFETs when the

channel length becomes comparable to the depletion
layer widths of the source and drain junctions.
Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 7

February 18 , 2020 Dr. Sanjeev
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Rai, ECE Department, MNNIT Allahabad
Second Order Effects(Contd.)
Body Effect
Threshold voltage is a fn. of the total charge in the depletion
region, now since the gate charge must mirror the depletion
charge before an inversion layer is formed.
Now as the negative bulk potential is increased the depletion
charge increases and hence the threshold voltage also
increases. This is called body effect.

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Due to body effect the threshold voltage modifies to:
where,

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Channel Length Modulation.

Actual length of the inverted channel gradually
decreases as the potential difference between the gate
and drain increases.
Channel length is a fn. of Vds, this effect is called
‘channel length modulation’.

Channel Length Modulation(Contd.).

The modified drain current due to channel length modulation is as given below,
Trans conductance modifies to:

Subthreshold Conduction.
Even for gate voltage less than the threshold voltage
there exists a finite drain current, called subthreshold
conduction.

MOS Small Signal Model.

The resistor between drain and source can be represented as:

We know bulk behaves as second gate, thus drain current

becomes function of bulk voltage.
Modeling this dependence of current source we can write the
value as:
Therefore:

Differentiating the drain current with bulk voltage :

Assignment Questions

Single Stage Amplifiers
Analog Design Octagon

Common Source Stage with Resistive Load

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From which
When the device is in triode region then,

Considering the base transistor in deep triode region one can assume that,
Therefore from the equivalent circuit as shown below we can show that,

Now since the transconductance plays a major role and we know that its value drops
considerably in deep triode region therefore Vout should be maintained greater than the
effective gate potential, thus using the equation as
input/output characteristics and viewing its slope as small signal gain one can write,


If the voltage drop across the drain resistor remains constant and the drain current is
reduced then drain resistor should increase. Increase in resistor value will result in
significant channel length modulation effect hence the equation modifies to:


Therefore,

Common Source Stage with Diode Connected Load
To obtain impedance of the device we can write V1=Vx and Ix=Vx/ro + gmVx
i.e impedance of the diode is equal to (1/gm)//ro=1/gm


If body effect exists in the circuit then V1= -Vx & Vbs=-Vx and
(gm+gmb)Vx + Vx/ro = Ix
Therefore, impedance seen at the source of transistor is lower when body effect is
included.


Now let us consider CS stage with diode connected load as shown below, for negligible
channel length modulation gain can be written as,

If the variation of with output voltage is neglected the gain is independent of

bias currents and voltages. Therefore the gain remains relatively constant indicating
that the i/o is relatively linear.


The diode connected load can also be implemented with PMOS device. The circuit is
free from body effect, the gain can be shown as,
where channel length modulation effect is also neglected.

Common Source Stage with Current Source Load

For large voltage gain it requires that we increase the load impedance of the CS stage.
However with diode connected load or resistor as load, increasing the load resistance
limits the output voltage swing.
Hence a more practical approach is to replace the load with current source.
Here, both transistors operate in saturation region and the total impedance seen at the
output node is r01//r02

Common Source Stage with Triode Load

Common Source Stage with Source Degeneration
the nonlinearity of the ckt. arises from the nonlinear dependence

of ID upon Vin. Therefore,
and hence define the equivalent transconductance of the circuit
as,


Assuming, we can write
The equiv. transconductance equation above indicates that with increase in source resistance the
transconductance becomes weaker function of . Therefore,


With body effect, the equivalent model can be drawn as,
From the model we can see that the current through R s is Iout , therefore, Vin = V1 + Iout Rs . Therefore applying KCL at
node X, we have

Consider CS stage with and

Rearranging the gain equation we get,

Equivalent Circuit for calculating output resistance ,
Current flowing through ro is given by Therefore adding the

voltage drop across ro and Rs we obtain,

To Compute the gain of a degenerated CS stage with channel length modulation and body effect.
Therefore the current through ro can be written as,


Single Stage Amplifiers(Source Follower)
Common Drain or Source Follower
With CS stage in order to achieve higher gain the load impedance must be as large as
possible. Therefore, if such stage should has to drive a low impedance then the ‘buffer’
must be placed after the amplifier such that it drives the load with negligible loss to the
signal.

Common Drain or Source Follower(Contd.)

The i/o characteristics can be expressed as,
Differentiating both sides w.r.t Vin ,

Common Drain or Source Follower(Contd.)

The same result can also be obtained by using the small signal model,

Assignment Questions

Thank you

Lecture (Contd.) : - MOS Regions of Operation

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Lecture (Contd.

• MOS Regions of Operation

1. Weak Inversion Region

2. Moderate Inversion Region

3. Strong Inversion Region

When the oxide-Si interface potential reaches a sufficiently

Drain Current & Transconductance

Non Saturation Drain Current:

MOS Capacitances( Contd.):

Short-channel effects occur in MOSFETs when the

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 7

Dr. Sanjeev Rai, ECE Department, MNNIT Allahabad 9

Due to body effect the threshold voltage modifies to:

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Channel Length Modulation.

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Channel Length Modulation(Contd.).

Trans conductance modifies to:

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The resistor between drain and source can be represented as:

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We know bulk behaves as second gate, thus drain current

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Differentiating the drain current with bulk voltage :

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Analog Design Octagon

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Common Source Stage with Resistive Load

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Common Source Stage with Resistive Load

When the device is in triode region then,

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Common Source Stage with Resistive Load

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Common Source Stage with Resistive Load

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Common Source Stage with Resistive Load

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Common Source Stage with Resistive Load

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Common Source Stage with Diode Connected Load

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Common Source Stage with Diode Connected Load

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Common Source Stage with Diode Connected Load

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Common Source Stage with Diode Connected Load

If the variation of with output voltage is neglected the gain is independent of

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Common Source Stage with Diode Connected Load

where channel length modulation effect is also neglected.

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Common Source Stage with Current Source Load

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Common Source Stage with Triode Load

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Common Source Stage with Source Degeneration

the nonlinearity of the ckt. arises from the nonlinear dependence

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