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Growth of Zinc Oxide Nanowires On Silicon
Growth of Zinc Oxide Nanowires On Silicon
Growth of Zinc Oxide Nanowires On Silicon
on Silicon (100)
INTRODUCTION
The unique and fascinating properties of
nanostructured materials have triggered
tremendous motivation among scientists to
explore the possibilities of using them in
industrial applications. In this article, they
report the preparation of ZnO nanowires on
Si (100) substrate by using an Au catalyzed
VLS process.
About the research:
Fabrication of ZnO nanowires.
SEM, TEM and AFM analysis.
XRD, XPS and EDX analysis.
PL analysis.
Fabrication of ZnO nanowires.
There are at least four different stages
involved in the formation of ZnO
nanowires:
* Au film deposition.
* Alloy nanoparticles formation.
*Absorption and nucleation.
*Epitaxial growth of ZnO nanowires.
Figure 1. Schematic
illustration of vapor-
liquid-solid nanowire
growth mechanism
(a) Au filmdeposition;
(b) alloy nanoparticles
formation;
(c) absorption and
nucleation;
(d) epitaxy growth
Au film deposition
The (100) oriented Si wafers were
used as the substrates for nanowires
growth. After standard cleaning, a
layer of 70 Å thick Au thin film was
deposited on silicon substrate by rf-
magnetron sputtering.
Alloy nanoparticles formation