Vel Tech

Rangarajan Dr.Sagunthala
R & D Institute of Science and Technology
(Deemed to be University Estd u/s 3 of UGC Act, 1956)

1150EC101 – Basic Electronics Engineering

Faculty
Mr. A.Sasikar
Asst.Prof / ECE
Vel Tech Rangarajan Dr.Sagunthala R & D Institute of Science and
Technology,
Avadi, Chennai, INDIA.
FET
FET – Field Effect Transistor
- three layer semiconductor device

- has three terminals (Regions)

- Source (S), Drain (D) & Gate (G)

o G – Heavily doped
o S & D – Lightly doped

- Unipolar device - current conduction is due majority charge carriers

[either e –ns or holes].

- Voltage controlled device

FET Classification
FET – Water Analogy
JFET – Junction Field Effect Transistor
 two types, n-channel and p-channel

n-channel

Construction Symbol
 Continued…

p-channel

Construction Symbol
Working of n-channel JFET
(i) VGS = 0 & VDS is positive
(ii) VGS < 0 & VDS is positive
(iii) VGS > 0 & VDS is positive
(i) VGS = 0 & Varying VDS (VDD)
- No variation in the width of
depletion region.
- Drain current (ID) increases as
VDS increases
-
(ii) VGS < 0 & Varying VDS (VDD)
- width of depletion region increases as VGS increases. (reverse biased)
- Drain current (ID) decreases as VDS increases with increase in VGS since channel width
decreases.
- at VGS=VP , depletion regions touches each other, blocks the current flow though channel,
hence ID becomes zero. (no conductive path)
- switched OFF.
- to switch OFF an n-channel device requires a negative gate-source voltage (VGS). Conversely,
to switch OFF a p-channel device requires positive VGS.
- where VP  Pinch off voltage

at lower VGS at VP 

(ii) VGS > 0 & Varying VDS (VDD)
- width of depletion region decreases as VGS increases. (forward biased)
- Drain current (ID) increases as VDS increases with increase in VGS since channel width
increases.
- switched ON
- to switch ON an n-channel device requires a positive gate-source voltage (VGS). Conversely,
to switch On a p-channel device requires negative VGS.
Drain Current (ID)

IDSS  drain current when VGS=0 V

Characteristics of JFET
Ohmic region

Saturation region

Cut off region

Transfer Characteristics Drain Characteristics

Comparison between JFET & BJT
Thank
Q