SPV materials tech.

present
development and future
trend
Dr. Bablu K. Ghosh
Sr. Lecturer, UMS

Keynote speaker
Int’l conference on semiconductor device (ICSPD) and 6th
int’l conference of new energy and future energy (NEFES)

ICSPD 2021 & NEFES 2021

1 12/21/21
  Fossil fuels are depleting rapidly

 Huge CO2 emission

 Global temperature rise

 Sea levels rise

 Rise of health risk

NEFES-2021 2 December 21, 2021

 Specific renewable energy uses
and related problem partially
solving is our target

Energy consumption
trends and type of energy
uses
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NEFE-2021
5 December 21, 2021
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 450

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ICSPD 2021 8 12/21/21
Green, M.A., 2019.. Progress in Energy
ICSPD 2021 9 12/21/21
Green, M.A., 2019.. Progress in Energy
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ICSPD 2021 11 12/21/21
 Ghosh, S.K. and Ghosh, B.K., Fossil Fuel Consumption Trend
and Global Warming Scenario: Energy Overview.
ICSPD 2021 12 12/21/21
 Current renewable energy
generation trends

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ICSPD 2021 14 12/21/21
 *Energy demand and
environment balance!

Global PV research outcome!

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 @ Fraunhofer ISE

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*Silicon solar cells ( Mono & polycrystalline)

*Thin Film solar cells

*Dye sensitized solar cells

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 *Cost-Efficiency trade-off
---Industrial progress

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 BK Ghosh et al, Optik-2020. (review)
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ICSPD 2021 20 12/21/21
poor

Materials
quality Vs
Cost

Better

ICSPD 2021 21 12/21/21

Nayak PK, et al., Adv mat.2011 ; B K ghosh et al.,IJER, 2019 @ Wiley
 Cost Vs
efficiency

ICSPD 2021 22 12/21/21

Nayak PK, et al., Adv mat.2011 ; B K ghosh et al.,IJER, 2019 @ Wiley
 Efficiency  1/2

Small Grain
Large Grain
and/or
Single
Polycrystalline
Crystals
Solids

d
d
Long d small d
High  Low 
High Cost Lower Cost
ICSPD 2021  decreases as grain size (and
23 cost) decreases 12/21/21
 Efficiency and energy density
progression interface effect

 Si-Si covalent

 III-V or II-VI ionic bonding

Si cell vertically stack with III-V or II-VI or

perovskite /organic can promote energy
density

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ICSPD 2021 25 12/21/21
Green, M.A., 2019.. Progress in Energy
 * Processing technology Vs efficiency

ICSPD 2021 26 12/21/21

 i m ize l
m in tica
To ro-op
l ec t ss
E lo

Loss minimized by the back

surface field effect
ICSPD 2021 27 12/21/21

Cuevas, A et al., SEMSC., 2018

  Materials Band Crystallinity Irradiance Temperature
Technology edge(eV)   co-efficient co-efficient
(Std. at (x10-3 m-2) (x10-3 K-1)
RT)
cSi 1.12 Very good 0.05 -4.5
mcSi 1.11 Good 0.08 -4
aSi 1.78 Poor -0.06 -2
CdTe 1.45 fair -0.04 -2.5
CIGS 1.15 fair -0.08 -3.5
Organic >1.6-1.7 Poor 0.5 4
Dye- >1.3 -1.55 poor -0.25 -4
synthezied
Perovskite >1.25 poor 0.001 <-1.6 -5
-1.62
ICSPD 2021 28 12/21/21
 BK Ghosh et al, RSER 82, (2018),PP 1990-2004; @ Elseiver
.
ICSPD 2021 29 12/21/21
 High temperature passivation to promote responsivity !

BK Ghosh et al, RSER 82, (2018),PP 1990-2004; @ Elseiver

.
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 *Efficiency progression by
-InGaN/Si advance Cells

ICSPD 2021 31 12/21/21

 Advantages:
* High heat capacity
* Resistant to effects of
strong radiation
* High efficiency

Difficulties:
* Too many crystal layers
create system
damaging stress
* Too expensive

ICSPD 2021 32 12/21/21

 Thick
Emitter wafer
Technology cost
issue!

BK Ghosh et al, RSER 82, (2018),PP 1990-2004; @ Elseiver

.
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 Ghosh BK, et al., Intl. J. Ener. Res. 40, (2016) 1271–1279 @ Wiley

ICSPD 2021 34 12/21/21

 Fuel cell
(conversion)
technology!

BK Ghosh et al, RSER 82, (2018),PP 1990-2004 @ Elseiver

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 Expensive materials technologies!
BK Ghosh et al, RSER 82, (2018),PP 1990-2004; @ Elseiver
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 Velocity or mobility shift !
BK Ghosh et al, RSER 82, (2018),PP 1990-2004; @ Elseiver

ICSPD 2021 37 12/21/21

 Ghosh BK, et al., Intl. J. Ener. Res. 40, (2016) 1271–1279 @ Wiley
ICSPD 2021 38 12/21/21
 1
Jn
0 Jp

-1

)
2
-2

-3

Current density(mA/cm
-4

-5

-6

-7

-8
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
Position (µm)

Ghosh BK, et al., Intl. J. Ener. Res. 40, (2016) 1271–1279 @ Wiley
ICSPD 2021 39 12/21/21
 Ghosh BK, et al., Intl. J. Ener. Res. 40, (2016) 1271–1279 @ Wiley
ICSPD 2021 40 12/21/21
 Ghosh BK, et al., Intl. J. Ener. Res. 40, (2016) 1271–1279 @ Wiley

ICSPD 2021 41 12/21/21

 Low cost TCO based PV
technology
Thin film, organic and organic-inorganic materials
optical band absorption is noticeable

They are potential for low cost and large area PV

technology

Huge leakage, deep level trap associated Voc loss

still a trouble!

TCO interface and electrodes carrier selectivity are important.

ICSPD 2021 42 12/21/21

BHJ-OSC (normal) and PHJ-PSC architectures as (inverted) (light from HTL/active material interface) (a)
BHJ-OSC (inverted ) and PHJ-PSC architectures as (normal) (light from ETM- active materials interface) (b)
and meso-porous ETL/TF ETM (c)

Ghosh, B.K. and Biswas, T.K., . International Journal of Energy (2018) @ Willey

ICSPD 2021 43 12/21/21

 TCO thermo-electric conduction
and band barrier effect!
Oxide Band gap, Electrical Electrical Thermal
Materials Eg (eV) Permittivity conductivity, conductivity,
(meso/thin (ε) σ(s/cm)x10-6 k(W/mK)
film)
Al2O3 9.92 9.5 0.15 16
ZnO 3.37 8.5 1.12 6.2
TiO2 3.02 10 6.60 11.7
SnO2 3.57 9.8 2.20 11.5
ZrO2 4.15 10 0.76 2.5
In2O3 2.95 4.8 2.50 3.2
CeO2 3.67 23 0.50 1.6
SrO2 3.12 6.9 0.003 2.2
SrTiO3 3.20 300 0.75 5.5
CaTiO3
ICSPD 2021 3.90 110
44 0.002 5.1 12/21/21
Ghosh, B.K. and Biswas, T.K., . International Journal of Energy (2018) @ Willey
 Ghosh et al 2021 Mater. Res. Express https://doi.org/10.1088/2053-1591/ac38de
ICSPD 2021 45 12/21/21
 Advancement of CdTe
over time is mainly
majority carrier BSF
contact and absorber
thickness

Advance
emitter/window
with low parasitic
BK Ghosh et al, Optik-2020. (review) absorption
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 Hypothesis and methodology
 SCAPS simulation for low cost solar cell

 Thin nSi and Ge doped nSiGe as active layer

 High electrical and thermal conductive PTAA as hole

transport layer

 SiO2 as interface layer as electron reflector and

induced high field effect

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 Hypothesis and methodology
Device
layout and
schematic

NEFES-2021 49 December 21, 2021

 nSi and nSiGe active layer thickness effect on
Voc, Jsc, FF and efficiency –without SiO2

NEFES-2021 50 December 21, 2021

 SiO2 barrier layer thickness effect on Voc, Jsc, FF
and efficiency – Optimum active layer thickness

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 nSi and nSiGe active layer thickness effect on Voc,
Jsc, FF and efficiency at optimum 2 nm SiO2

NEFES -2021 52 December 21, 2021

 SiO2 Barrier layer effect on
field development

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 PTAA
surface
Glass ITO ZnO PTAA

Ghosh BK et al., https://link.springer.com/article/10.1007/s13391-020-00235-y (2020) @springer

NEFES 2021 54 December 21, 2021
 Ghosh BK et al., https://link.springer.com/article/10.1007/s13391-020-00235-y (2020) @springer

NEFES 2021 55 December 21, 2021

 (a)
(a)

(b)

(b)

NEFES 2021 56 December 21, 2021

Ghosh BK et al., https://link.springer.com/article/10.1007/s13391-020-00235-y (2020) @springer
 (a)

(b)
Poly 3hexylthiophene (P3HT- e donor) and
[6,6]-phenyl-C61-butyric acid methyl ester
(PCBM- e acceptor)
https://digital-
library.theiet.org/content/conferences/10.1049/cp.2018.1299
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ICSPD 2021 58 12/21/21
 EQE and SPV materials prospects

*Rau, U., et al Phys. Review, 2017

Absorption (blue) to emission *Gregg, B.A. ,JAP, 2003
(red) huge gap

NEFES 2021 59 December 21, 2021

 *Si HJ (HIT) cell thermal coefficient is
reduced by aSi:H junction in Si

*Organic p type materials is prospective for

organic- nSi hybrid HJ cell

*Our earlier report signifying it

Ghosh BK et al., https://digital-library.theiet.org/content/conferences/10.1049/cp.2018.1298
@ IET, 2018

NEFES 2021 60 December 21, 2021

 Less thermal
association

Ghosh, B.K. and Biswas, T.K., . https://onlinelibrary.wiley.com/doi/abs/10.1002/er.4298

(2018) @ Willey

NEFES 2021
61 December 21, 2021
 Free energy is associated to temperature effect

Temperature effect is energetic when D-A barrier

is higher ( KT « Vb, barrier height/potential )
At low barrier the related field effect is potential
to overcome energy loss of OPV

Suitable interface design can lessen energetic

losses, contact related to Voc loss of OPV
NEFES 2021 62 December 21, 2021
 * Si bifacial, PERC, and even HIT cell higher band edge layer as
TCO is promising

* CdTe cell also improving front contact by TCO

* Diverse nano-wire is function to improve it

* Emerging cell TCM as TCO is auspicious

* Nano-structure of both thermal and electrical conduction desire

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ICSPD 2021 64 12/21/21
 Thanks for your patience

ICSPD 2021 65 12/21/21

 * World energy report – IEA
* -Fraunhofer ISE-2020, Germany
 https://www.atmos.washington.edu/academics/classes/2011Q1/101/Climate_Cha
nge_2011_part2.pdf
* www.irena.org/ publications/2017/Jun/Accelerating-the-Energy-Transition-
through-Innovation (Accessed: 27 February 2019)
 https://ourworld.unu.edu/en/climate-change-what-happens-after-2100
 https://www.climate.gov/news-features/climate-qa/how-much-will-earth-warm-
if-carbon-dioxide-doubles-pre-industrial-levels
 https://www.energy.gov/
 https://www.nrel.gov/
 https://www.ise.fraunhofer.de/content/dam/ise/de/documents/publications/stu
dies/Photovoltaics-Report.pdf
 Advanced High Voltage Power Device Concepts | B. Jayant Baliga ...
 Kouro, S et al., 2015. IEEE Industrial Electronics Magazine, 9(1), pp.47-61
 Zhang, L., et al., 2013. IEEE Transactions on Power Electronics, 28(2), pp.730-739
 Trew, R.J., 2002. Proceedings of the IEEE, 90(6), pp.1032-1047
 Ghosh Bket al., Clean Energy Technol (CEAT) IET Proc 2014:1–5.
 Ghosh, B.K et al., 2013 IEEE Conference on CEAT (pp. 446-449).

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