This document discusses MOS transistor theory and CMOS process technology. It covers n-MOS and p-MOS transistors, their operating characteristics like threshold voltage and body effect. The key modes of operation for n-MOS transistors are accumulation, depletion and inversion based on the gate-source voltage. Current flow depends on factors like distance between source and drain, channel width and carrier mobility. p-MOS transistors operate in a similar manner but with holes as the majority carriers instead of electrons. The three regions of operation for both n-MOS and p-MOS transistors are cut-off, non-saturated and saturated modes.
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Documents.pub Unit i Mos Transistor Theory and Process Technology
This document discusses MOS transistor theory and CMOS process technology. It covers n-MOS and p-MOS transistors, their operating characteristics like threshold voltage and body effect. The key modes of operation for n-MOS transistors are accumulation, depletion and inversion based on the gate-source voltage. Current flow depends on factors like distance between source and drain, channel width and carrier mobility. p-MOS transistors operate in a similar manner but with holes as the majority carriers instead of electrons. The three regions of operation for both n-MOS and p-MOS transistors are cut-off, non-saturated and saturated modes.
This document discusses MOS transistor theory and CMOS process technology. It covers n-MOS and p-MOS transistors, their operating characteristics like threshold voltage and body effect. The key modes of operation for n-MOS transistors are accumulation, depletion and inversion based on the gate-source voltage. Current flow depends on factors like distance between source and drain, channel width and carrier mobility. p-MOS transistors operate in a similar manner but with holes as the majority carriers instead of electrons. The three regions of operation for both n-MOS and p-MOS transistors are cut-off, non-saturated and saturated modes.
AND PROCESS TECHNOLOGY TOPICS • NMOS and PMOS transistors • Threshold voltage • Body effect • Design equations • Second order effects • MOS models • Small signal AC characteristics • Basic CMOS technology MOS TRANSISTOR • MOS Metal Oxide Semiconductor • MOS transistor is a majority carrier device, current is the conducting channel b/w source & drain. • 2 types of MOS transistor: n-MOS transistor p-MOS transistor • Various symbol representation for n-MOS & p-MOS n-MOS n-MOS • Majority carriers electrons • When +ive voltage is applied on gate, no. of electrons will be increased. • So, conductivity of channel is increased. • If Vg < Vt ,Then the channel is cutoff. • Threshold voltage is the voltage at which MOS device starts to conduct. p-MOS • Majority carriers holes • 2 types of modes in n-MOS & p-MOS: – Enhancement mode – Depletion mode.
• n-MOS Enhancement mode:
– Device will be cut off when Vgs= 0 • n-MOS Depletion mode: – Device will conduct even if Vgs= 0 • p-MOS Enhancement mode: – Above Vtp, device will start to conduct. • p-MOS Depletion mode: – Device will be in conducting state even if Vgs= 0 Conduction characteristics n-MOS ENHANCEMENT TRANSISTOR • It has Moderately doped p - type silicon substrate • In that p-substrate, Heavily doped n + source and drain. • Channel – a thin insulating layer made up of Silicon dioxide (SiO 2) • Gate –polycrystaline silicon (polysilicon) Working principle • When Vgs= 0, Vds is applied. • There is no current flow b/w source & drain. • When positive voltage is applied to gate, electric field is produced across p-substrate. • It attracts electrons towards the channel. • It is continued when gate voltage is increased further, the region below gate will be converted from p-type to n-type. • So the channel becomes n-type(n-channel). • Three types of modes of MOS transistor: – Accumulation mode – Depletion mode – Inversion mode Accumulation mode
• In this mode Vgs < Vt
• Initially p-substrate is having holes only. Depletion mode
• In this mode Vgs =Vt
• Depletion region is created in this mode . • Vgs is increased and reach Vt • So holes are repelled from the channel. • Because of this, depletion region is created. Inversion mode
• In this mode Vgs > Vt
• Voltage increased further, so electrons are attracted towards the region below gate. • So, the layers of electrons will be formed below the gate. • Bcoz of this layer, this mode is known as inversion mode. Operation regions of MOS transistor • Cut-off mode • Non-saturated mode(linear or resistive or unsaturated mode) • Saturated mode Cut-off mode • When Vgs > Vt and Vds = 0. • Depletion layer is created. • So the region is completely cut-off. Non-saturated mode • When Vds < Vgs - Vt • Deep channel is created in this mode. • Inversion region is weak in this region. Saturated mode • Here, Vds > Vgs - Vt and Vgd < Vt • The channel becomes pinched off. • Inversion is strong. • Channel current is controlled by gate voltage & it is independent of drain voltage • Ids depends following: – Distance b/w source & drain – Channel width – Threshold voltage – Thickness of oxide layer – Dielectric constant of gate insulator – Carrier mobility(μ) Conclusion • Three conduction regions are available in nMOS enhancement transistor. Cut-off region (no current flow) Non-saturated (Id depends Vg and Vd) Saturated mode (Id independent of Vds ) p-MOS ENHANCEMENT TRANSISTOR