Problems and solutions

Problem 1
Solution
 Problem 2
• Consider a semiconductor whose
bandgap is 2.1 eV and whose band
diagram is also shown in the figure.
• The semiconductor is having density of
states D(E)= 3 eV-1 and the Fermi
function which varies as
f(E)=1/(1+0.5E). Compute the current
flowing the conduction band of this
device within the energy range 2.1- 4.1
eV at a time interval of 2 µs. Comment
on the nature on the semiconductor i.e
(intrinsic, n-type or p-type ) from the
Fermi distribution function by varying
the energy E. Explain your answer.
 Problem 3

A 2 cm long piece of Si with cross-sectional area of 0.1 cm2 is doped with donors at 1015 cm-
3
, and has a resistance of 90 ohms. The saturation velocity of electrons in Si is 10 7 cm/s for
fields above 105 V/cm. Calculate the electron drift velocity, if we apply a voltage of 100 V
across the piece. What is the current through the piece if we apply a voltage of 10 6 V across
it?

Solution
R=ρL /A
σ = 1/ρ

Voltage = 100 V, R= 90 Ω
So current I=100/90 = 1.11 A
I=nqvA
So v=I / nqA

When Voltage = 106 V, saturation velocity v= 107 cm/s

I = nqvA, where v= 107 cm/s
 Problem 4

In an n-type semiconductor rectangular bar, if the length of the bar becomes four times of the
original length and doping is decreased by half of its original doping, then how it will affect the
conductivity and current density through the bar if the applied voltage remains the same?

Solution
σ = nqμ, J=σE = σV/L
μ=v/E=(L/t)/(V/L)= L2/Vt

Now, when the length is increased by four, length = 4L

and electron conc.= n/2.
Hence, μm = (4L/t)/(V/4L)=16L2 /Vt = 16μ
σm = (n/2)q(16μ) = 8nqμ = 8σ
Jm = σmEm = 8σV/4L= 2σV/L =2 J
 Problem 5
Consider a silicon PN junction whose depletion region width x n on the N-side of the junction is
0.2 μm and the permittivity of silicon is 1.044 ×10-12 F/cm. Find the magnitude of the peak
electric field (in kV/cm) at the junction.

solution
 Problem 6
When a silicon diode having a doping concentration of N A = 9×1016 cm-3 on p-side and ND =
1×1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3μm. Given that
the permittivity of silicon is 1.04×10-12 F/cm, find the depletion width on the p-side and the
maximum electric field in the depletion region.

solution
 Problem 7
As shown in the Figure, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform
donor doping concentration of N D1 =1014 cm -3 and ND2=1016 cm-3 in the n-regions of the diodes,
and uniform acceptor doping concentration of NA1=1014 cm-3 and NA2 =1016 cm-3 in the p- regions
of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the
diodes, find the ratio C 2 and C1 of their reverse bias capacitances for the same applied reverse
bias.
Solution
 Problem 8

We inject electrons into a p-type semiconductor 5 microns long such that the concentration
varies linearly from 1020 cm-3 to 0 from left to right. If the mobility of the electrons is 500 cm 2/Vs,
what is the current density if the electric fields are negligible? Consider T= 300 K.

Solution

𝐷 𝑛 𝑘𝑇
=
𝜇 𝑞
𝑑𝑛
𝐽 =𝑞 𝐷𝑛
𝑑𝑥
 Problem 9

Show that in a semconductor, the intrinsic carrier concentration ni can be expressed as

𝑛𝑖=√ 𝑁𝐶 𝑁𝑉 exp(−𝐸 𝑔¿¿2𝑘𝑇)¿

Solution
 Problem 10

A recently discovered semiconductor has Nc = 1019 cm-3 , Nv = 5 × 1018 cm-3 and Eg = 2 eV. If it is
doped with 1017 donors atoms per cm3(fully ionized), calculate the electron, hole, and intrinsic
carrier concentrations at 627°C. Sketch the simplified band diagram, and specify the value of E F
and Ei with respect to the band edges. If we apply 5 V across a piece of this semiconductor 8 cm
long, what is the drift current? The piece is 2 cm wide and 1.5 cm thick. The diffusion coefficient
of holes and electrons is 25 cm2/s and 75 cm2 /s respectively.

𝑛𝑖=√ 𝑁 𝐶 𝑁 𝑉 exp(−𝐸 𝑔¿¿2𝑘𝑇)¿

 Problem 11
In a p-n junction diode operating under certain reverse bias Vr, if Vr is increased to 3 Vr, what
will be the impact on the following parameters
(a) Depletion width (b) Contact potential (c) Junction capacitance (d) Probability of breakdown