EXPERIMENT NO.

07
ENERGY BAND GAP

Prepared by: Department of Physics

Medi-Caps University, Indore
EN3BS13 ENGG. PHYSICS 3-0-2
1. To find the thickness of thin wire using laser.
2. To measure the numerical aperture of an optical fiber by scanning method.
3. To determine the radius of curvature of Plano convex lens using Newton’s ring experiment.
4. To determine wavelength of spectral lines of mercury vapor lamp with the help of grating and
spectrometer.
5. To determine the specific rotation of sugar solution with the help of bi quartz polarimeter.
6. Determination of Planck’s constant (h) using light emitting diode (LED)of various colors.
7. To determine the energy band gap of semiconductor diode.
8. To Verify V-I characteristics of semiconductor diode and Zener diode.
9. To determine the value of acceleration due to gravity (g) using compound pendulum.
10. To find the relation between frequency and length using Sonometer..

Department of Physics Medi-Caps University, Indore

Objective
To determine the band gap of a semiconductor using a PN junction diode.

Department of Physics Medi-Caps University, Indore

Apparatus Required
 Specific resistance and energy band gap kit,
 D.C. power supply,
 LED controlled oven,
 Red oil thermometer an

Department of Physics Medi-Caps University, Indore

Theory
 In a solid the atoms are not independent from each other, but they are in electric field of other atoms, hence their
energy states are also affected from each other .

 In a solid , since there are large number of atoms close to each other , the energy level of each atom splits into the
energy levels in number equal to the number of atoms present in the solid. These energy levels are so close to each
other that they form an energy band. The lower energy levels remain associated with the atoms, but the higher energy
levels start associating with their neighboring atoms.

 As the number of atoms in the crystal increases, the number of energy levels in the band increases. Thus the band can
be assumed to be continuous. The width of energy bands depends on the energy level of each isolated atom and on
separation between the atoms of crystal.

 The width of low energy level is less and that of high energy level is more. The inner bands 1 st and 2nd etc. are filled or
satisfied like energy levels in atom. The valence band of valence orbits and next to it are conduction levels or bands.

 The gap of energy Eg/ ∆E between almost filled valance band and nearly empty conduction band is called forbidden
gap. If this gap is larger than 10 eV or so, it is an insulator and if 1 eV, it is semiconductor (1.1 eV for Si and 0.7 eV
for Ge). If Eg = 0 they are overlapping, it is a good conductor.

Department of Physics Medi-Caps University, Indore

One dimensional energy level Formation of energy levels and
diagram for a crystal. energy bands in a solid

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Energy bands in a metal, insulator and semiconductor

Department of Physics Medi-Caps University, Indore

 Fermi level:

 Fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero
temperature.

 The concept of the Fermi energy is a crucially important concept for the understanding of the electrical and
thermal properties of solids. Both ordinary electrical and thermal processes involve energies of a small
fraction of an electron volt. But the Fermi energies of metals are on the order of electron volts.

 This implies that the vast majority of the electrons cannot receive energy from those processes because there
are no available energy states for them to go to within a fraction of an electron volt of their present energy.

 The Fermi level of an intrinsic semiconductor lies exactly between valence band and conduction band i.e .
middle of forbidden energy gap. The Fermi level of an extrinsic semiconductor lies close to valence band
conduction band for P type and N type semiconductor respectively .

Department of Physics Medi-Caps University, Indore

 ,

Expression for energy band gap:

When an external voltage (V ) is applied across the diode such that n-side is positive and p-side is negative, it is said to be
reverse biased. The applied voltage mostly drops across the depletion region. The direction of applied voltage is same as
the direction of barrier potential. As a result, the barrier height increases and the depletion region widens due to the change
in the electric field. The effective barrier height under reverse bias increases, this suppresses the flow of electrons from n
→ p and holes from p → n. Thus, diffusion current, decreases enormously compared to the diode under forward bias. The
electric field direction of the junction is such that if electrons on p-side or holes on n-side in their random motion come
close to the junction, they will be swept to its majority zone. This drift of carriers gives rise to current. The drift current is
of the order of a few μA. This dift current is also known as the reverse saturation current. This current is read by a digital
micro ammeter. The saturated value of reverse current I s depends on the temperature of junction diode it increases by 7%
for each degree rise in temperature and is given as
Eg
I s  Ioe kT

is given by Nn is the concentration of electrons in N region ,

where, I0 [ A { N n ev n  N p ev p }]

T is the absolute temperature of junction in Kelvin Np is the concentration of holes in P region,

n is the drift velocity of electrons
A is the area of junction,
k is the Boltzmann’s constant, p
is the drift velocity of holes.

Department of Physics Medi-Caps University, Indore

 Derivation

Eg
loge I s  loge I o  here C = log e I o
kT

Eg
log10 I s  C 
2.3026kT

Here C is again constant which is equal to log10 I o . If we want Eg is in electron volt, then

1 .6  10  19 E g
log 10 I s  C 
2 .3026  1 .38  10  23 T
5 . 036  10 3
log 10 I s  C  E g
T
If a graph is plotted for log I vs 10 3 we get a straight line with slope‘s’ given by s = (log10Is) / (103/T) [which comes to be negative]
10 s T  s
Hence the band gap energy of semiconductor Eg = eV
5 . 036
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Arrangement for the determination of band gap
energy of a semiconductor

Department of Physics Medi-Caps University, Indore

 Procedure:-
1. Now note down the room temperature in observation table.
2. Calculate the least count of thermometer.
3. Switch on the main supply of training board.
4. Keep the thermometer inside the oven to measure the temperature of diode and ‘ON’ the switch of oven to heat
the heater.
5. Note the readings for the rise in temperature of diode with the thermometer T and the value of current by
micrometer (digital display) for a regular interval of temperature (5 0C).
6. If the temperature exceeds to 650C, switch-off the oven.
7. Now note readings for the fall in temperature of diode with the thermometer T and the value of current by
micrometer (digital display) for a regular interval of temperature (5 0C).
8. Plot a graph between log10 Is ( x axis) and 103/T( y axis) for rise and fall in temperature.
9. Find the slope of graphs.
10. Calculate the band gap using equation 6 for both values of slope.
11. Calculate mean of band-gap.

Department of Physics Medi-Caps University, Indore

Observations
Table 1 . Table 2 .
Rise in temperature Fall in temperature
Least count of thermometer: ………
Room temperature: ……………

S. Temp Current Temp. 103/T log10Is Temp Current Temp. 103/T log10Is
No. (toC) I­s (A) (T in K) (toC) I­s (A) (T in K)

3
4
5
6
7
8

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Sample plot for fall in temperature.

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 Discussions:-

Results
The negative value of slope indicates …………………………………….
The band gap energy of the given semiconductor = ……….. eV  

Percentage error : The error in band gap can be calculated by the formula
 
(Standard value – experimental value) x 100%
Standard value
 Standard value = 0.67 eV (for Ge diode)

Precautions
1. Temperature should not exceed 800 C.
2. Silicon diode should not be used because it requires a temperature of 125 0 C. At this temperature neither the thermometer
nor the oven can be used.
3. Thermometer should be well placed at its place.
 

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 Viva-Voce
1. What is a semiconductor?
2. What is meant by intrinsic semiconductor?
3. What is the order of energy gap in a pure semiconductor?
4. What do you mean by an extrinsic semiconductor?
5. What is doping?
6. What are the charge carriers in a pure semiconductor?
7. What are the charge carriers in n-type semiconductor?
8. What is the effect of temperature on conductivity of a semiconductor?
9. What do you mean by the band gap energy?
10. What is the order of magnitude of this energy gap for silicon and for germanium?
11. What is the principle of your experiment?
12. What is valence band ?
13. What is conduction band ?
14. What is a conductor ?
15. What is an insulator ?
16. How many types of semi conductors are there ?
17. What do you mean by Fermi energy level ?
18. What is P-type semi conductor ?
19. Why P-type semi conductor is called Acceptor impurity ?
20. What is N-type semi conductor ?
21. Why N-type semi conductor is called Donar impurity ?
Department of Physics Medi-Caps University, Indore