Dry Etching, General Principles

Dr. Marc Madou, Winter 2011

Class 4
Content
 Dry etching: definition  Etching profiles in physical etching
 Pressure units and modes of gas  Faceting
flow  Ditching
 Plasmas or discharges  Redeposition
 How to create a vacuum
 Plasmas: DC and AC
 Comparing wet with Dry
 Paschen curve
Etching
 Dry etching mechanisms
 Dry etching types and equipment
 Etching profiles:
 Sputtering
 Chemical
 Ion-enhanced
 Ion-enhanced inhibitor
 Dry etching: definition

 Dry etching techniques are those that use

plasmas (hot ionized gases) to drive chemical
reactions or employ energetic ion beams to
remove material. Dry-etching processes yield
finer patterns than wet etching (surface
tension !). These techniques also offers
greater safety as large quantities of corrosive
acids or bases are not required.
 Within a dry etching reaction chamber the
wafers lie directly in the plasma glow (also
called a discharge), where reactive ions are
accelerated towards the wafer (often biased).
The ions are a species likely to attack the
substrate material chemically with or without
selectivity.
Pressure units

1 microbar = 0.1 Pa 1 in.H2 O = 248.8 Pa Energy Requirements Associated with Various Physical
1 µm Hg =0.1333 Pa 1 kPa = 1000 Pa Processes.
1 N/m2 = 1 Pa 1 ft H2 O = 2986 Pa
1 mm H2 O = 9.795 Pa 1 in. Hg = 3386 Pa Ion Energy (eV) Reaction
1 mbar = 100 Pa 1 psi = 6895 Pa <3 Physical adsorption
1 mmHg = 133.3 Pa 1 bar = 105 Pa 4-10 Some surface sputtering
1 torr = 133.3 Pa 1 atm = 101325 Pa 10-5000 Sputtering
10K-20 K Implantation

psi (1) in.H2 O in.Hg (3) kPa millibar cm H2 O mm Hg

(2) (4) (5)
psi 1.000 27.680 2.036 6.8947 68.947 70.308 51.715
in.H2 O 3.612710-2 1.000 7.3554 10-2 0.2491 2.491 2.5400 1.8683
in.Hg 0.4912 13.596 1.000 3.3864 33.864 34.532 25.400
kPa 0.14504 4.0147 0.2953 1.000 10.000 10.1973 7.5006
millibar 0.01450 0.40147 0.02953 0.100 1.000 1.01973 0.7500
6
cm H2 O 1.4223 10-2 0.3937 2.8958 10-2 0.09806 0.9806 1.000 0.7355
mm Hg 1.9337 10-2 0.53525 3.9370 10-2 0.13332 1.3332 1.3595 1.000
(torr)
(1) pounds per square inch
(2) at 39 °F
(3) at 32 °F
(4) at 4 °C
(5) at 0 °C
Pressure units

 Definitions of Vacuum Regimes:

1) Rough Vacuum: ~0.1- 760 torr (atmospheric pressure is 760 torr)
2) Medium Vacuum:~ 0.1 to 10-4 torr
3) High Vacuum: ~ 10 -8 to 10-4 torr
4) Ultrahigh Vacuum: < 10 -8 torr
 2 modes of gas flow:
 Viscous Flow regime:gas density (pressure) is high enough, many
moleculemolecule collisions occur and dominate the flow process (one
molecule “pushes” another). Collisions with walls play a secondary role
in limiting the gas flow.
 Molecular flow regime: gas density (pressure) is very low, few molecule-
molecule collisions occur and molecule- chamber wall collisions dominate
the flow process (molecules are held back by walls). See further below for
mathematical expressions for these two regimes.
 How to create a vacuum
 Visit on your own time
http://et.nmsu.edu/ETCLASSES/vlsi/files/ARTICLE.HTM on
vacuum pumping (take the quiz at the end).
 The first thing that all basic systems have is a rough-pumping
system. It is used to reduce the pressure from atmospheric
pressure in the chamber to a lower pressure level that other
low-pressure systems can use. Then there has to be a fine-
pumping system that must be able to attain sufficient pumping
speed to handle the outgassing from the work produced in the
chamber of the vessel. There must also be vacuum gauges that
determine the pressure at certain points of the system.
 Pumps:
 Diffusion pumps operate from 10-4 Torr to 5x10-11 Torr. Diffusion
pumps operate by boiling a fluid, often hydrocarbon oil, and
angling the dense vapor stream in a downward conical direction
back into the pump boiler. Gas molecules from the system that
enter the oil curtain are pushed toward the boiler by momentum
transfer from the large fluid molecules.

Diffusion pump
 Plasmas : DC and AC
 Mechanical pump. Pump operation is based on bulk flow of gas; hence the pump works in the viscous flow
regime. Used for obtaining "rough" vacuum (10-3 Torr), which is the lower limit of the viscous flow regime

Principle of mechanical operation:

         (1) begin expansion cycle
         (2) seal off expanded volume
         (3) compress gas out exhaust

 Simplest plasma chamber is 2 parallel plate electrode set (anode and cathode) in a low pressure
Argon filled chamber (e.g. 0.001 to 1 Torr). The two electrodes are positioned parallel to each other,
with the top electrode and chamber walls electrically grounded while the lower electrode and
substrate holder are connected through a dc-blocking capacitor and matching network to a 13.56
MHz F generator (AC plasma case)
 Plasmas: DC and AC

 Apply 1.5 kV over 15 cm--field is 100-V/cm. Breakdown of Argon

when electrons transfer a kinetic energy of 15.7 eV to the Argon gas.
 These energetic collisions generate a second electron and a positive
ion for each successful strike.
 If the two electrons reenergize creating an avalanche of ions and
electrons we get a glow or plasma.
 At the start of a sustained gas breakdown a current starts flowing and
the voltage drops to about 150 V.
 To sustain a plasma, a mechanism must exist to generate additional
free electrons after the plasma generating ones have been captured at
the anode.
 The additional electrons are formed by ions of sufficient energy
striking the cathode (emitting secondary Auger electrons).
 This continuous generation provides a steady supply of electrons and
a stable plasma.
 Plates too close: no ionizing collisions (not enough energy), too far
too many inelastic collisons in which ions loose energy.
 Plasmas : DC and AC

 Plasma dark spaces: dark because the higher energy electrons

cause ionization rather than light-generating excitation.
 Plasma is always positive, this follows from kinetics: for a
random velocity distribution the flux of ions and electrons upon
a surface is given by:

n i,e vi, e
j i,e 
4
where n is a density and <v> an average velocity. Ions are 4000
to 100,000 times more heavy than electrons so the average
velocity of electrons is much larger. Electron flux to surrounding
surfaces is larger resulting in a positive charge on the plasma.
 Assymetry of voltage distribution: electrons move faster away
from the cathode than positive ions are accelerated towards it
larger space charge (also the dark space is larger at the cathode).
Plasmas : DC and AC
Plasmas : DC and AC

 The largest voltage drop is in front of  The ratio between ionized species
the cathode where charged particles will and neutral gas species is 10-6 to 10-
experience their largest acceleration. 4.
The cathode gets etched the anode does
not !! Substrates to be etched are laid
down on the cathode.
 Efficiency or ‘strength’ of a particular v e  kT e (e.g. 1 10eV )
plasma is evaluated by the average
 electron energy (temperature)
 ion energy (temperature)
 electron density (e.g. 109 and 1012 cm-3)
 ion density (e.g. 108 to 1012 cm-3) v i  kT i (e.g. 0. 04 eV )
 neutral species density (e.g. 1015 to 10 16
cm -3)
 ion current (e.g. 1 to 10 mA/cm 2).
Plasmas : DC and AC

 An important quantity to describe a E

plasma is the ratio of electrical field kTi ,e ~
P
(I)
over pressure (Equation I). With
increasing fields the velocity of free
electrons or ions increases (~E) but an
increase in pressure decreases the (II)
electron or ion mean free path
(~1/P).The mean free path () is given
by Equation (II) where nv is the number
of molecules per unit volume,
 The number of molecules per unit
volume, nv, can be determined from
Avogadro's number and the ideal gas
law, leading to Equation (III) (Equation III)
 The bombarding flux of ions on the
cathode is given by Equation (VI): j i  qn i  i E
(Equation IV)
Plasmas : DC and AC
 AC plasma’s for etching insulating surfaces.
 Capacitor makes voltage distribution assymetric in this case.
 A DC self bias results.
 Etching energy: E max  eV dc  V p  eV T
 Plasma energy: E max  eV p
 Self bias: V dc  kTe ln T e m i
2e T i m e
AC Plasma’s
Paschen curve

Paschen Curve in Air

Breakdown
Voltage V
1400
V
1200

1000

800

600

400
Pressure x distance
200 P X d ( mm Hg-mm)

0
0 2 10 20 30 40

2.6 µm 13. 16 µm
At 1 atmosphere = 760 mm Hg
New Physics and
Chemistry
 Dry chemical etching mechanisms

 Reactive species generation (1)

 Diffuse to the solid (2)
 Adsorption at the surface (3)
 Reaction at the surface (4)
 Reactive cluster desorption (5)
 Diffusion away from the surface
(6)
Dry chemical etching mechanisms

 Continuous dry-etching spectrum » isotropic

 low pressure <100 millitorr: physical » more selective
sputtering » least damage
 unselective
 directional
 radiation damage
 100 millitorr range:RIE
 physical and chemical
 directional
 more selective than sputtering
 higher pressures:plasma etching
 chemical (10-1000 times faster) --see
extreme example, gas phase etching
with XeF2 (not really a plasma)
Dry chemical etching mechanisms: purely chemical

 XeF2 Gas Phase Etching (high

pressure, chemical only)
 no plasma (just pump)
 10 µm/min
 no damage
 isotropic
 very selective (Si over Al,
photoresist, oxide and nitride)
 CMOS compatible
Dry chemical etching mechanisms: Physical-
chemical etching: Energy-driven anisotropy
 Dry chemical etching mechanisms: Physical-
chemical etching: Inhibitor-driven anisotropy
Dry etching types and equipment
Dry Etching

Glow discharge Ion beam methods

methods-Diode -Triode Set-ups
Set-up

Physical etching
Ion beam Reactive
Plasma Reactive Sputter Ion assisted ion beam
etching ion etching etching milling chem.etch etching
sputtering

Reactive Reactive Inert Inert gas Inert gas Reactive gas

gas gas gas ion ion ion beam
plasma plasma
0.2 - 2
Torr 0.01-0.2
Torr
10-4-10-3
Torr
Low High High No reactive Reactive Some
energy energy energy neutrals neutrals reactive
bombard.
Dry etching types and equipment

 RIE chamber with load lock

Substrate holder for ion etching

Matching network

Ground shield

Cathode
(RF electrode with target)
13.56 MHz
RF Generator,
Anode 1-2 kW

Vacuum chamber wall

Substrate holder for deposition
Dry etching types and equipment
CAIBE RIBE IBE MIE MERIE RIE Barrel PE
Etchi ng
Pressure ~10-4 ~10-4 ~10-4 10-3-10-2 10-3-10-2 10-3- 10-1-100 10-1-101
(Torr)
10-1
Etch chem/ chem/ phys phys chem/ chem/ chem chem
Mechani sm phys phys phys phys
Sel ecti vi ty good good poor poor good good excellent good
Profil e anis or anis anis anis anis iso or iso iso or
iso anis anis
Reactive gas Inert gas

+++++++ Plasma source +++++++

RIBE CAIBE
Reactive gas

Substrate Substrate

Vacuum pump
Dry etching types and equipment

Acronym/Technique Explanation

CAIBE Chem icallyassisted

ionbeametching
MERIE M agneticallyenhanced
reactiveionetching
MIE M agneticallyenhancedion
etching
PE Plasm aetching
RIBE Reactiveionbeam
etching
RIE Reactiveionetching
Dry etching types and equipment : RIBE vs.
CAIBE

 CAIBE is RIE in a triode

system (e.g. 10, 000Å/min) Reactive gas Inert gas
 RIBE ion is reactive and etches

(e.g. 100Å/min)
+++++++ Plasma source +++++++

RIBE CAIBE
Reactive gas

Substrate Substrate

Vacuum pump
 Etching profiles in dry etching
 Sputtering: directional, physical.
 Chemical: non-directional
(diffusion).
 Ion-enhanced energetic:
directional.
 Ion-enhanced inhibitor: directional.
Etching profiles in physical etching

 Faceting: angle of preferential

etching
 Ditching (trenching): sometimes
caused by faceting
 Redeposition: rotational stage
might reduce this effect.
Comparing wet vs. dry etching
Parameter Dry Etching Wet Etching
Directionality Can be highly directional with Only directional with single
most materials (Aspect ratio of crystal materials (Aspect
25 and above) ratio of 100 and above).
Production-line Good Poor
automation
Environmental Low High
impact
Mas king film Not as critical Very critical
adherence
Cos t chemicals Low High
S electivity Poor Can be very good
Materials that can be Only certain materials can be All
etched etched (not e.g. Fe, Ni, Co)
Radiation damage Can be severe None
Proces s s cale-up Difficult Easy
Cleanlines s Good under the right operational Good to very good
conditions
CD control Very good (< 0.1µm) Poor
Equipment cos t Expensive Inexpensive
S ub micron features Applicable Not applicable
Typical etch rate Slow (0.1 µm/min ) Fast (1 µm/min, anis. )
Theory Very complex, not well Better understood (Chapter
understood 4)
Operating Many Few
parameters
Control of etch rate Good due to slow etching Difficult
Homework

1     How is a DC plasma created and how does an RF plasma differ?  Why is a
plasma always positive with respect to the reactor vessel walls?  In which
etching setup would you prefer to etch an insulator?  Is space positively
charged?
2    Detail the different dry etching profiles available and how you obtain them. 
3. Explain the DC breakdown voltage versus electrode distance curve
(Paschen’s law) and how it is relevant to dry etching.  How is
miniaturization of an electrode set equivalent to creating a local vacuum?
4. Discuss the etch profiles in physical etching.  Also draw profiles exhibiting
faceting, ditching, and redeposition. 
5. Design a process to fabricate a polyimide post 100µm high and 10 µm in
diameter on a Si cantilever.  The Si cantilever must be able to move up and
down over a couple of microns.