Overview of the two

first chapters

Instructor: Dr.Nguyễn Vũ Thắng

Outline

 Introduction
 Models for MOS transistor
 Passive Components in MOS Technology
 Conclusion
Introduction
 There is significant interaction between circuit
and device design

 Any analysis is only accurate as the

appropriate model is used
Outline

 Introduction
 Models for MOS transistor
 The influence of device fabrication on
device characteristics
 Conclusion
Depletion Region of a pn Junction

 These junctions all contribute voltage-

dependent parasitic capacitances
 Important characteristics such as of active
devices depend directly on the properties of
this region
 The width of the depletion region controls the
basic operation of MOS transistor
Depletion Region of a pn Junction
The penetration of the depletion layer:

 Into the p-type region

 Into the n-type region

 If either ND or NA is much larger than the other,

the depletion region exists almost entirely in the
lightly doped region
Voltage-dependent parasitic
capacitances
Junction Breakdown

 The maximum electric field

 There is an large increase in reverse current by the effect of

avalanche breakdown when the reverse bias approaches the
breakdown voltage BV

 Zener diodes which operates in the avalanche region are widely

used as voltage references
Transfer Characteristics of MOS
Devices
Transfer Characteristics of MOS Devices
 Transfer Characteristics of MOS
Devices
 In operation, the gate-source voltage modifies the
conductance of the region under the gate, allowing the
gate voltage to control the current flowing between
source and drain
 The gate-source voltage VGS required to produce an
inversion layer is called the threshold voltage Vt

Qb Qss
Vt  ms  2 f  
Cox Cox
 VT 0    2 f  VSB  2 f 
NMOS device characteristics.
The drain current
 In active region
The effect of channel-length modulation :
Xd is function of VDS in the pinch-off region=>
ID varies with VDS =>

 In triode region
 Decomposition of Gate-Source
Voltage
Vt
 VGS Vov
 The overdrive

 These two components have different

properties
 Transconductance

 The transconductance

 A low transconductance-to- current ratio is an

important requirement in MOS analog circuit
design
Intrinsic Gate-Source and Gate-Drain
Capacitance
 In the triode region: the channel exists
continuously from source to drain

 In the saturation region: the channel pinches off

before reaching the drain


 and
 Output Resistance

 The effect of channel-length modulation causes the

drain current to increase when the drain-source
voltage is increased
 Basic Small-Signal Model of the
MOS Transistor
 Vgs =>id =>The total drain current Id
<=>increasing the gate-source voltage in an n-channel
transistor increases the channel conductivity and drain
current

 Compare with p-channel transistor

 Body Transconductance
 The body-source voltage changes the threshold,
which changes the drain current
 The substrate acts as a second gate => body effect
 The ratio gmb/gm is an important quantity in practice

This ratio is the rate of change of threshold voltage

with body bias voltage
Parasitic Elements in the Small-
Signal Model
Small-signal MOS transistor
equivalent circuit
MOS Transistor Frequency Response
 The transition frequency fT : the frequency where the
magnitude of the short-circuit, common-source current
gain falls to unity

 Assume Cgs >>Cgd + Cgd, then

fT increases as the inverse square of the critical device

dimension across which carriers are in transit
Effective Channel Length
 The side or lateral diffusions of the source and the drain under the gate => Ld

 A depletion region exists between the drain region and the end of the channel
=> Xd

 The Effective Channel Length

Short-Channel Effects
 Short-channel effects become important in MOS
transistors at channel lengths of about 1 um or less
 Require modifications to the MOS models given
previously

 Velocity Saturation from the Horizontal Field

 Transconductance and Transition Frequency
 Velocity Saturation from the
Horizontal Field
 At low field values is proportional to the field, the
velocity at high field values approaches a constant called
the scattering-limited velocity vscl
 The drain current is a linear function of the overdrive
(VGS - Vt) when the carrier velocity saturates
=> Model of velocity saturation in an MOSFET by addition
of series source resistance to an ideal square-law
device.
 Transconductance and Transition
Frequency
When the velocity is saturated:
 Further decreases in L or increases in (Vgs - Vt) do not

change the transconductance

 Reduces the transconductance-to-current ratio for a

given overdrive.
 The transition frequency is independent of the overdrive.

 The transition frequency is inversely proportional to the

channel length
 Substrate Current Flow in MOS
Transistors
 Impact ionization
 This phenomenon creates a parasitic resistance from
drain to substrate and shunts the drain to ac ground.
 Model by inclusion of a controlled current generator I DB
from drain to substrate

 Affect to high output impedance of MOS current mirrors

(chapter 4)
 Resistors
 Diffused Resistors
 Polysilicon Resistors
 Well Resistors
 MOS Devices as Resistor (sheet resistance)
Capacitors in MOS Technology

 Poly-Poly Capacitors
 MOS Transistors as Capacitors
Conclusion

 The contents of these two chapters are basic

knowledge for Analog IC designer

 It is the platform to study the remaining

chapters of this book, especially chapter 7
Thank for your attention !