Shaili Samanta

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Introduction to Capacitors Electrical device that can store an electrical charge. Creates an electrostatic field internally which stores energy Measure of the energy storing ability is called capacitance.

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 Constructed of two conductors (plates) separated by an insulator (dielectric) Individual connection leads are attached to each plate for circuit connections.

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QUESTIONS
What happens if the capacitor is no longer connected to the supply when you insert a dielectric between its two plates?? What if it is still connected to the supply?? Match the following three capacitors:

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 Is capacitance in Fig.B twice the capacitance in Fig. A???

L
Top plate

2L

Bottom plate

Substrate Fig. A

Substrate Fig. B

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 Will both circuit work in the same way?

Top Plate
Bottom Plate

Fig. A

Bottom Plate

Top Plate

Fig. B

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 Arrange according to ascending value of capacitance:

a. b. c. d. e. Metal Poly Poly Diff. Metal 1 Metal 2 Poly Poly Diff. Metal

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Top plate

Improved Capacitor:

Bottom plate

Substrate

Is this only 1 capacitor? How do we decrease the net parasitic capacitance??

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 Why cant we use gate capacitance all over the chip????

 Because it is the finest thing we got in the whole chip. If gate oxide breaks, the chip stops working.

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 Where cap density is more..???

Horizontal Parallel Plates Vertical Parallel Plates

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 Match these capacitors:

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 Ans: Ans:

Common Centroid Structures

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Can you say in what ratio two capacitors have been matched here??
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 Why are extra interconnects seen between these capacitors??? Match two capacitors of unit size 8 and 3.75. The key is to match the perimeter-area ratio. Assume the unit capacitors are sized 4um*4um.

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Integrated Capacitors (IC)

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 Types of Integrated Capacitors:

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 Features of Integrated Capacitors:

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 Factors affecting accuracy of Integrated Capacitors:

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 Simplest Capacitor:

Substrate

What is the problem with this?

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 Fringing Effect:

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Estimating Routing Capacitance:  Routing capacitance between metal and poly can be approximated using a simple parallel-plate model.

 The effect of the fringing fields is to increase the effective area of the plates.
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 Parasitic Capacitance

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TYPE Gate Poly-Poly (Option) Metal-Metal Metal-Substrate Metal-Poly Poly-Substrate Junction Caps.

C(aF/m2 ) 10,000 1000 50 30 50 120 ~1000

Vc (ppm/V) Huge 10 20

Tc (ppm/C) Big 25 30

Big

Big

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 High Capacitance in Inversion.

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Accumulation Accumulation occurs when one applies a voltage, which is less than the flatband voltage. The negative charge on the gate attracts holes from the substrate to the oxide-semiconductor interface. Only a small amount of band bending is needed to build up the accumulation charge so that almost all of the potential variation is within the oxide. Depletion As a more positive voltage than the flatband voltage is applied, a negative charge builds up in the semiconductor. Initially this charge is due to the depletion of the semiconductor starting from the oxide-semiconductor interface. The depletion layer width further increases with increasing gate voltage. Inversion As the potential across the semiconductor increases beyond twice the bulk potential, another type of negative charge emerges at the oxide-semiconductor interface: this charge is due to minority carriers, which form a so-called inversion layer. As one further increases the gate voltage, the depletion layer width barely increases further since the charge in the inversion layer increases exponentially with the surface potential.

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 But still applicable in many applications, e.g.:  (Miller) compensation capacitor  Bypass capacitor [Supply, bias]
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High Non-Linearity, Temperature Coefficient

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Metal insulated metal cap

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 Matching of Capacitors:

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 Undercut Effect:

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 Rules for Capacitor Matching:

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Thank You
QUERIES?

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