UNIT II

Biasing & Small Signal Analysis of

Amplifiers
 Biasing – Different types of BJT& FET biasing – bias
stability– CE, CB and CC amplifiers -Small signal analysis
of a transistor amplifier using complete h - parameter
model, low frequency model of FET – CS, CG and CD
amplifiers.
CONTENTS
• Biasing
• Different types of BJT& FET biasing
• Bias stability
• CE, CB and CC amplifiers
• Small signal analysis of a transistor amplifier using
complete h -parameter model
• low frequency model of FET – CS, CG and CD amplifiers.
 Introduction:
The controlled amount of voltage and/or currents fed to the different junctions of a transistor is transistor biasing.
Need for biasing
•To get proper operating point
•To stabilize the operating point
•To avoid thermal runaway
•To ensure that transistors are biased correctly to produce proper amplification and/or switching.
Operating point
The operating point of a device, also known as bias point, quiescent point is the steady state voltage or current at a specified
terminal of an active device with no input signal applied
Transistor Biasing Circuit:
The levels of Ic, and VCE define the transistor dc operating point or quiescent point. The circuit that provides this state is known
as a bias circuit.
significance of Q-point
The information about the operating current and voltage of the particular
device.
This helps to know the maximum and minimum current or voltage upto which
device can be operated safely.
Operating BJT outside these
maximum limits will shortens
the lifetime of the device
At Operating point B –
transistor must be biased
Effect of temperature on device parameters

• Transistor current gain (βac) and

• Transistor leakage current ( I CO ).
• Base emitter voltage (VBE)
Bias Stability:
The collector current for CE transistor is
IC = βIB+(1+β)ICO
• IB, β, ICO are functions of temperature.
Effect of temperature on ICO

• Flow of current in the circuit produces heat.

• Minority carriers increases with temperature
• This increases leakage current ICEO=(1+β)ICBO
• ICBO doubles for every 10o c rise in temperature
• Increase in ICEO makes increase in IC. Thus the temperature increased.
• This process is cumulative which will lead to thermal runaway that will
destroy the transistor.
• Hence Q-point becomes instable.
 Effect of temperature on VBE

 VBE changes with temperature at the rate of 25 mv/oC

 IB depends on VBE and IC depends on IB

IB = (VCC- VBE)/RE

Hence change in VBE makes change in IB. Thus IC changed with respect to
temperature i.e. Q-point becomes instable.
Effect of temperature on β

• As IC = βIB , change in β makes change in IC.

Thus the Q-point becomes instable due to effect of temperature on β.

NOTE:
If the circuit is designed such that the base current IB is made to decrease with
increase in temperature then reduction of βIB will compensate for increase in
(1+ β)ICO and keeps IC constant.
DC load line:

The DC load line is defined as a line on the output characteristics of the

transistor which gives the value of IC and VCE corresponding to zero signal
condition.
VCC

RB
Rc

Vin RL
If S is larger, the more likely the circuit is to exhibit thermal instability
• In active region the basic relation between IC and IB is
Methods of transistor biasing:
• Fixed bias configuration
• Collector feedback configuration
• Voltage divider bias configuration
FIXED-BIAS CONFIGURATION

Fixed bias circuit DC equivalent circuit of fixed bias

Advantages
• simplicity
• few components are required
• If supply voltage is large compared to VBE, IB becomes independent of VBE.
• By changing RB Q-point can be fixed anywhere in the active region.
Disadvantages:
• No care is taken for maintaining IC because it increases with the temperature.
• IC = βIB, though IB is fixed β value changes from one transistor to other.
• Poor stabilization
 
Collector Feedback Configuration

Collector feedback bias circuit and its DC equivalent circuit

Applying Kirchhoff’s voltage law on
collector–emitter loop results in
Negative feedback:
• If IC increases then IE also increases which turn increase the emitter voltage
VE. As VBE = VB-VE, the base to emitter voltage (vbe) decreases when VE
increased. The reduction of VBE changes the forward biased B-E junction to
reverse biased junction such that transistor enters into cut off region which
reduce the base current IB and then IC decreased because of IC=βIB. Thus IC
maintained at level constant level. This process is called as negative
feedback.
• The stability of Q-point can be maintained due to negative
feedback.
ASSIGNMENT
**DERIVE THE STABILITY FACTOR**

Advantages
• Provides stabilization
Disadvantages
• Not suitable for transformer coupled amplifier
  
Voltage-Divider Bias Configuration or Self Bias Configuration

• Redrawing the input side

RTh : The voltage source is replaced
by a short-circuit equivalent VTh : The voltage source V CC is
returned to the network and the open-
circuit Thévenin voltage of above circuit is
determined as

Applying the voltage-divider rule gives

VTh = VR2 = VB = R2VCC/(R1+R2)

=

Applying Kirchhoff’s voltage law to base-emitter loop

VTh - IBRTh - VBE - IERE = 0
Substituting IE = (β + 1)IB and solving for IB yields
Stability Factor
• VT = IBRB + VBE IBRE + ICRE
Advantages:
• RE provides stability
• Stability factor is controlled by RB and RE
• S is small so it provides good stability
Disadvantages:
• More components are involved
 Slide Title

Product A Product B
• Feature 1 • Feature 1
• Feature 2 • Feature 2
• Feature 3 • Feature 3