Electronics Engineering

BJT & FET

Engr. Mark Anthony A. Castro, ECT
TRANSISTORS

Engr. Mark
• From the words TRANSfer
resISTOR
• Invented by JOHN BARDEEN,
WILLIAM SHOCKLEY and
WALTER BRATTAIN at BELL
LABORATORIES.
• POINT CONTACT
TRANSISTOR – First transistor
(1947) TRANSISTORS
Contoso Ltd.
TRANSISTORS 3
• BJT – is constructed with
three doped semi conductor
regions separated by two PN
junctions.

TRANSISTORS

Contoso Ltd.
TRANSISTORS 4
• BIPOLAR refers to TWO
CHARGED CARRIERS:
Electrons and Holes
• Used as SWITCH or as an
AMPLIFIER
• Current-Controlled Sources TRANSISTORS

Contoso Ltd.
BJT 5
• EMITTER (E) – most heavily
doped region
• BASE (B) – thin and lightly
doped region
• COLLECTOR (C) – largest and
moderately doped region
TRANSISTORS
Three Terminals

Contoso Ltd.
BJT 6
• NPN – most common
(the mobility of ELECTRON is more than the mobility of HOLE)

• PNP

TRANSISTORS
Types of BJT
Contoso Ltd.
BJT 7
BIASING and Region of OPERATION

TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

FORWARD REVERSE ACTIVE AMPLIFIER

FORWARD FORWARD SATURATION SWITCHING

REVERSE REVERSE CUT-OFF SWITCHING

REVERSE FORWARD CUT-OFF

(Inverse Active)
SWITCHING TRANSISTORS

Contoso Ltd.
BJT 8
BIASING and Region of OPERATION

TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

FORWARD REVERSE ACTIVE AMPLIFIER

FORWARD FORWARD SATURATION SWITCHING

REVERSE REVERSE CUT-OFF SWITCHING

REVERSE FORWARD CUT-OFF

(Inverse Active)
SWITCHING TRANSISTORS

Contoso Ltd.
BJT 9
EXAMPLE:
1. In the active region, the collector-base junction is_____, while the
base-emitter junction is _____.

A. forward and forward-biased

B. forward and reverse-biased
C. reverse and reverse-biased
D. reversed and forward-biased

Contoso Ltd.
10
EXAMPLE:
1. In the active region, the collector-base junction is_____, while the
base-emitter junction is _____.
TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

A. forward and forward-biased FORWARD REVERSE ACTIVE AMPLIFIER

B. forward and reverse-biased FORWARD FORWARD SATURATION SWITCHING

C. reverse and reverse-biased REVERSE REVERSE CUT-OFF SWITCHING

D. reversed and forward-biased REVERSE FORWARD CUT-OFF SWITCHING

Contoso Ltd.
11
EXAMPLE:
2. At cutoff region, the collector-base and base-emitter junction of a
transistor are

A. both reverse-biased
B. forward and reverse-biased
C. both forward-biased
D. All of the above

Contoso Ltd.
12
EXAMPLE:
2. At cutoff region, the collector-base and base-emitter junction of a
transistor are
TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

A. both reverse-biased FORWARD REVERSE ACTIVE AMPLIFIER

B. forward and reverse-biased FORWARD FORWARD SATURATION SWITCHING

C. both forward-biased
REVERSE REVERSE CUT-OFF SWITCHING
D. All of the above
REVERSE FORWARD CUT-OFF SWITCHING

Contoso Ltd.
13
EXAMPLE:
3. In saturation region, the collector-base and base-emitter junction
of a transistor are

A. both reversed-biased
B. forward and reverse-biased
C. both forward-biased
D. reversed and forward-biased

Contoso Ltd.
14
EXAMPLE:
3. In saturation region, the collector-base and base-emitter junction
of a transistor are
TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

A. both reversed-biased FORWARD REVERSE ACTIVE AMPLIFIER

B. forward and reverse-biased FORWARD FORWARD SATURATION SWITCHING

C. both forward-biased
REVERSE REVERSE CUT-OFF SWITCHING
D. reversed and forward-biased
REVERSE FORWARD CUT-OFF SWITCHING

Contoso Ltd.
15
EXAMPLE:
4. If the base-emitter junction is reverse biased and the base-
collector junction is forward biased, the transistor will be at what
region of operation?

A. active region
B. cutoff region
C. saturation region
D. breakdown region

Contoso Ltd.
16
EXAMPLE:
4. If the base-emitter junction is reverse biased and the base-
collector junction is forward biased, the transistor will be at what
region of operation?
TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION

A. active region FORWARD REVERSE ACTIVE AMPLIFIER

B. cutoff region FORWARD FORWARD SATURATION SWITCHING

C. saturation region REVERSE REVERSE CUT-OFF SWITCHING

D. breakdown region
REVERSE FORWARD CUT-OFF SWITCHING

Contoso Ltd.
17
EXAMPLE:
5. Under what region does the transistor operate if both the base-
emitter and base-collector junction are reverse-biased?

A. active region
B. cutoff region
C. saturation region
D. breakdown region

Contoso Ltd.
18
EXAMPLE:
5. Under what region does the transistor operate if both the base-
emitter and base-collector junction are reverse-biased?
TRANSISTOR COMMON
B-E JUNCTION B-C JUNCTION OPERATION APPLICATION
A. active region
B. cutoff region FORWARD REVERSE ACTIVE AMPLIFIER

C. saturation region FORWARD FORWARD SATURATION SWITCHING

D. breakdown region REVERSE REVERSE CUT-OFF SWITCHING

REVERSE FORWARD CUT-OFF SWITCHING

Contoso Ltd.
19
TRANSISTOR CONFIGURATIONS

COMMON BASE
• Mainly used for
impedance matching.
• Low input impedance
(30-550Ω) Insert or Drag and Drop your Screen Design here

• High output impedance

(250k-550kΩ)
• Alpha should be less
than 1.
• no current gain but
voltage gain
Contoso Ltd.
COMMON BASE 20
TRANSISTOR CONFIGURATIONS

ALPHA
• COMMON BASE
AMPLIFICATION
FACTOR.
Insert or Drag and Drop your Screen Design here

• It is the ratio of the

collector current
change to the change in
emitter current.
• Ranges from 0.9 to
0.999
Contoso Ltd.
COMMON BASE 21
TRANSISTOR CONFIGURATIONS

COMMON EMITTER
• Frequently used in
practical amplifiers
• Provides good voltage,
current and power gain. Insert or Drag and Drop your Screen Design here

• Low input impedance

(500-1500Ω)
• High input impedance
(30k-50kΩ)
•current gain and voltage
gain
Contoso Ltd.
COMMON EMITTER 22
TRANSISTOR CONFIGURATIONS

BETA
• COMMON EMITTER
FORWARD CURRENT
AMPLIFICATION
FACTOR
Insert or Drag and Drop your Screen Design here

• It is the ratio of
change in collector
current to the base
current.
• Beta ranges from 20
to 600. COMMON EMITTER
Contoso Ltd.
23
TRANSISTOR CONFIGURATIONS

COMMON
COLLECTOR/EMIT
TER FOLLOWER
• current gain but Insert or Drag and Drop your Screen Design here

no voltage gain

Contoso Ltd.
COMMON COLLECTOR 24
TRANSISTOR CONFIGURATIONS
GAMMA
• COMMON
COLLECTOR
FORWARD
CURRENT Insert or Drag and Drop your Screen Design here

AMPLIFICATION
FACTOR
• It is the ratio of
change in emitter
current to the base
current. COMMON COLLECTOR
Contoso Ltd.
25
TRANSISTOR CONFIGURATIONS

Insert or Drag and Drop your Screen Design here

Contoso Ltd.
26
EXAMPLE:
1. Calculate the common-emitter amplification factor β of a
transistor with a common-base amplification factor α = 0.99.
A. 10
B. 50
C. 100
D. 200

Contoso Ltd.
27
EXAMPLE:
1. Calculate the common-emitter amplification factor β of a
transistor with a common-base amplification factor α = 0.99.
A. 10
B. 50
C. 100
D. 200

Contoso Ltd.
28
EXAMPLE:
2. Solve for the base current if collector current is 600mA and the
current gain is 20.

A. 30mA
B. 3mA
C. 12mA
D. 1.2mA

Contoso Ltd.
29
EXAMPLE:
2. Solve for the base current if collector current is 600mA and the
current gain is 20.

A. 30mA
B. 3mA
C. 12mA
D. 1.2mA

Contoso Ltd.
30
 COMPARISON OF TRANSISTOR CONFIGURATIONS

PARAMETER CB CE CC
Input Impedance (Zi) LOW MODERATE HIGH
Output Impedance (Zo) HIGH MODERATE LOW
Current Gain (Ai) LOW (=1) MODERATE HIGH
Voltage Gain (Av) HIGH MODERATE LOW (=1)
Power Gain (Ap) MODERATE HIGH LOW
Phase Shift NONE 180 NONE

Contoso Ltd.
31
 COMPARISON OF TRANSISTOR CONFIGURATIONS

PARAMETER CB CE CC
Input Impedance (Zi) LOW MODERATE HIGH
Output Impedance (Zo) HIGH MODERATE LOW
Current Gain (Ai) LOW (=1) MODERATE HIGH
Voltage Gain (Av) HIGH MODERATE LOW (=1)
Power Gain (Ap) MODERATE HIGH LOW
Phase Shift NONE 180 NONE

Contoso Ltd.
32
 COMPARISON OF TRANSISTOR CONFIGURATIONS

PARAMETER CB (Gate) CE (Source) CC (Drain)

Input Impedance (Zi) LOW MODERATE HIGH
Output Impedance (Zo) HIGH MODERATE LOW
Current Gain (Ai) LOW (=1) MODERATE HIGH
Voltage Gain (Av) HIGH MODERATE LOW (=1)
Power Gain (Ap) MODERATE HIGH LOW
Phase Shift NONE 180 NONE

Contoso Ltd.
33
EXAMPLE:
1. When checking a transistor by ohmmeter, a relatively ________
resistance is displayed for a forward-biased junction and
________ resistance for a reverse-biased junction.

A. low, very high

B. low, low
C. high, high
D. high, very low

Contoso Ltd.
34
EXAMPLE:
1. When checking a transistor by ohmmeter, a relatively ________
resistance is displayed for a forward-biased junction and
________ resistance for a reverse-biased junction.

A. low, very high

B. low, low
C. high, high
D. high, very low

Contoso Ltd.
35
EXAMPLE:
2. The impedance of the common emitter as seen at the input is

A. Low
B. Moderate
C. High
D. None

Contoso Ltd.
36
EXAMPLE:
2. The impedance of the common emitter as seen at the input is

A. Low PARAMETER CB CE CC
B. Moderate Input Impedance (Zi) LOW MODERATE HIGH
C. High Output Impedance (Zo) HIGH MODERATE LOW
D. None Current Gain (Ai) LOW (=1) MODERATE HIGH

Voltage Gain (Av) HIGH MODERATE LOW (=1)

Power Gain (Ap) MODERATE HIGH LOW

Phase Shift NONE 180 NONE

Contoso Ltd.
37
EXAMPLE:
3. A common-collector amplifier has ________ input resistance,
________ current gain, and ________ voltage gain.

A. high, high, low

B. high, low, low
C. high, low, high
D. low, low

Contoso Ltd.
38
EXAMPLE:
3. A common-collector amplifier has ________ input resistance,
________ current gain, and ________ voltage gain.

PARAMETER CB CE CC
A. high, high, low
Input Impedance (Zi) LOW MODERATE HIGH
B. high, low, low Output Impedance(Zo) HIGH MODERATE LOW
C. high, low, high Current Gain (Ai) LOW (=1) MODERATE HIGH
D. low, low Voltage Gain (Av) HIGH MODERATE LOW (=1)
Power Gain (Ap) MODERATE HIGH LOW
Phase Shift NONE 180 NONE

Contoso Ltd.
39
EXAMPLE:
4. Which one of the following configurations has the lowest input
impedance?

A. Fixed-bias
B. Common-base
C. Common-collector
D. Common-emitter

Contoso Ltd.
40
EXAMPLE:
4. Which one of the following configurations has the lowest input
impedance?
PARAMETER CB CE CC

Input Impedance (Zi) LOW MODERATE HIGH

A. Fixed-bias
Output Impedance (Zo) HIGH MODERATE LOW
B. Common-base
Current Gain (Ai) LOW (=1) MODERATE HIGH
C. Common-collector
Voltage Gain (Av) HIGH MODERATE LOW (=1)
D. Common-emitter
Power Gain (Ap) MODERATE HIGH LOW

Phase Shift NONE 180 NONE

Contoso Ltd.
41
EXAMPLE:
5. The emitter-follower configuration has a ________ impedance at
the input and a ________ impedance at the output.

A. low, low
B. low, high
C. high, low
D. high, high

Contoso Ltd.
42
EXAMPLE:
5. The emitter-follower configuration has a ________ impedance at
the input and a ________ impedance at the output.

PARAMETER CB CE CC
A. low, low
Input Impedance (Zi) LOW MODERATE HIGH
B. low, high Output Impedance(Zo) HIGH MODERATE LOW
C. high, low Current Gain (Ai) LOW (=1) MODERATE HIGH
D. high, high Voltage Gain (Av) HIGH MODERATE LOW (=1)
Power Gain (Ap) MODERATE HIGH LOW
Phase Shift NONE 180 NONE

Contoso Ltd.
43
FIXED BIAS

• Fixed bias has the

HIGHEST POWER
GAIN but the MOST
UNSTABLE.
• Base current bias. TYPES OF BIASING

Contoso Ltd.
BIASING 44
EMITTER STABILIZED

• Emitter stabilized is
MORE STABLE
compared to fixed
bias but with LESSER
GAIN. TYPES OF BIASING

Contoso Ltd.
BIASING 45
VOLTAGE FEEDBACK

• Almost the same with

voltage divider bias
but with LESS NUMBER
OF RESISTORS.
• Self-bias. TYPES OF BIASING

Contoso Ltd.
BIASING 46
VOLTAGE DIVIDER

• Voltage Divider Bias is

considered the MOST
STABLE but relatively
LOWER IN GAIN. TYPES OF BIASING

Contoso Ltd.
BIASING 47
VOLTAGE DIVIDER

Contoso Ltd.
FORMULA 48
EXAMPLE:
1. A type of transistor biasing that has the highest power gain is?

A. Base Current
B. Emitter Stabilizer
C. Voltage Feedback
D. Voltage Divider

Contoso Ltd.
49
EXAMPLE:
1. A type of transistor biasing that has the highest power gain is?

A. Base Current/Fixed-bias
B. Emitter Stabilizer
C. Voltage Feedback
D. Voltage Divider

Contoso Ltd.
50
EXAMPLE:
2. One characteristic of fixed biasing is

A. Greater Stability
B. Unstable
C. Lesser Gain
D. All of the above

Contoso Ltd.
51
EXAMPLE:
2. One characteristic of fixed biasing is

A. Greater Stability
B. Unstable
C. Lesser Gain
D. All of the above

Contoso Ltd.
52
EXAMPLE:
3. A type of biasing that uses less number of resistors but is almost
the same as voltage divider bias

A. Emitter Stabilized
B. Fixed Bias
C. Voltage Divider
D. Voltage Feedback

Contoso Ltd.
53
EXAMPLE:
3. A type of biasing that uses less number of resistors but is almost
the same as voltage divider bias

A. Emitter Stabilized
B. Fixed Bias
C. Voltage Divider
D. Voltage Feedback

Contoso Ltd.
54
EXAMPLE:
4. Determine the dc bias voltage VCE and the current Ic for the
voltage divider bias circuit, given: Vcc=22V, R1=39kΩ, R2=3.9kΩ,
Rc=10kΩ, Re=1.5kΩ and β=140, using NPN transistor.

VCE = 12.22V & Ic = 0.85mA Contoso Ltd.

Exact Analysis 55
EXAMPLE:
4. Determine the dc bias voltage for the voltage
divider bias circuit, given: Vcc=22V, R1=39kΩ, R2=3.9kΩ, Rc=10kΩ,
Re=1.5kΩ and β=140, using NPN transistor.
Using
Approximate
Analysis

VCEq = 12.03V & Icq = 0.867mA Contoso Ltd.

Approx. Analysis 56
EXAMPLE:
5. For the emitter bias network.
Determine:
= 40.1µA
= 2.01mA
= 13.97V
= 15.98V
= 2.01V
= 2.71V
= -13.27V
Contoso Ltd.
NPN 57
EXAMPLE:
6. Determine VCE for the voltage-divider bias configuration:
VCE = -10.16V
(using approximate analysis)

Contoso Ltd.
PNP 58
• FET – A unipolar, voltage-
controlled device where the
FIELD EFFECT
voltage between the two TRANSISTORS (FET)
terminals, gate and source
controls the current through
the device.
• VOLTAGE-CONTROLLED
SOURCES

Contoso Ltd.
FET 59
• Junction FET (JFET)
• Metal Oxide Semiconductor
FIELD EFFECT
(MOSFET)
TRANSISTORS (FET)
1. Depletion Type
2. Enhancement Type

TYPES OF FET

Contoso Ltd.
FET 60
• Source (S)
• Drain (D)
• Gate (G) JUNCTION FET (JFET)

Terminals

Contoso Ltd.
JFET 61
• N-Channel
• P-Channel
JUNCTION FET (JFET)
• CHANNEL – path for the
electron flow.

TWO TYPES OF JFET

Contoso Ltd.
JFET 62
 JUNCTION FET (JFET)

Spigot/tap
Contoso Ltd.
JFET 63
 BJT and FET COMPARISON
PARAMETER BJT FET
Terminals Base, Emitter, Collector Gate, Source, Drain
Size Relatively bigger than FET Generally smaller

Types NPN & PNP N-channel & P-channel

Principle of Operation Bipolar (Uses both electrons & holes on Unipolar (Uses only either electrons or
its operations) holes on its operations)
Output Current Current – Controlled (Output is a Voltage – Controlled ( Output is a
function of the input current) function of the input voltage)

Input-circuit bias Forward Reverse

Input Resistance of Impedance Relative Low (due to forward-bias input- Very High ( due to reversed-bias input
circuit) circuit)
Input Sensitivity Relatively more sensitive Relatively less sensitive
Stability Less stable (affected by temperature More stable (not much affected by
variations) temperature variations)

Contoso Ltd.
64
JFET FORMULAS

SHOCKLEY’S EQUATION:

TRANSCONDUCTANCE:

MAX TRANSCONDUCTANCE:
When VGS=0
Contoso Ltd.
FORMULA 65
JFET FORMULAS
Where:
ID = drain current in Ampere
VGS = gate-to-source voltage in Volts
VP = pinch-off voltage in Volts
IDSS = drain saturation current in Ampere
gm = transconductance in Ampere per Volts or Siemens

Contoso Ltd.
FORMULA 66
JFET FORMULAS
Where:
PINCH-OFF VOLTAGE (VP)
• The maximum gate voltage that will close the channel.

DRAIN SATURATION CURRENT (IDSS)

• The maximum drain current that can flow in the
channel.
Contoso Ltd.
FORMULA 67
EXAMPLE:
1. A JFET has a drain saturation current of 10mA and a pinch-off
voltage of -4V. Calculate the maximum transconductance.

A. 2.5mS
B. 5mS
C. 25mS
D. 50mS

Contoso Ltd.
68
EXAMPLE:
1. A JFET has a drain saturation current of 10mA and a pinch-off
voltage of -4V. Calculate the maximum transconductance.

A. 2.5mS
B. 5mS
C. 25mS
D. 50mS

Contoso Ltd.
69
• Has no PN junction.
• Gate is insulated from the
Metal Oxide Semiconductor
channel by Silicon Oxide (SiO2).
(MOSFET)
• Higher input impedance than
JFET, consequently it does not
draw much power from the
source.
• Sensitive in static.

Contoso Ltd.
MOSFET 70
TWO TYPES OF MOSFET

Metal Oxide Semiconductor

• Depletion Type (MOSFET)
• Enhancement Type

Contoso Ltd.
MOSFET 71
DEPLETION TYPE
• Normally ON or Normally OPEN
Metal Oxide Semiconductor
Channel.
(MOSFET)
• It will DEPLETE the channel to
CLOSE it.
ENHANCEMENT TYPE
• Normally OFF or Normally
TWO TYPES OF MOSFET
CLOSED Channel.
• It will ENHANCE the channel to
OPEN it.
Contoso Ltd.
MOSFET 72
 MOSFET FORMULAS
Where:
ID = drain current in Ampere
VGS = gate-to-source voltage in Volts
gm = transconductance in Ampere per Volts or Siemens
VT = threshold voltage in Volts
k = 0.3mA/V2
THRESHOLD VOLTAGE (VT)
• The voltage that will open the channel.
• The inverse of PINCH-OFF Voltage (VP).

Contoso Ltd.
FORMULA 73
EXAMPLE:
1. Calculate the transconductance of a p=channel MOSFET
enhancement type if the gate-source voltage VGS = -8V, threshold
voltage Vt = -4 and a constant k = -0.3 mA/V².

A. 1.2mS
B. 2.4mS
C. 3.6mS
D. 7.2mS

Contoso Ltd.
74
EXAMPLE:
1. Calculate the transconductance of a p=channel MOSFET
enhancement type if the gate-source voltage VGS = -8V, threshold
voltage Vt = -4 and a constant k = -0.3 mA/V².

A. 1.2mS
B. 2.4mS
C. 3.6mS
D. 7.2mS

Contoso Ltd.
75
Contoso Ltd.
76
Add a footer
 GODBLESS

Thank You
Engr. Mark Anthony A. Castro, ECT
Secret
maacastro@dhvtsu.edu.ph

Jeremiah 29:11