CHPTR 1 - Freq Response of BJT Amplifier (Part (II)

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ANALOG ELECTRONIC

CIRCUITS 1
EKT 204

Frequency Response of
BJT Amplifiers (Part 2)

1
HIGH FREQUENCY
 The gain falls off at high frequency end due to the
internal capacitances of the transistor.
 Transistors exhibit charge-storage phenomena that
limit the speed and frequency of their operation.

reverse-biased
Small capacitances exist between the junction
base and collector and between the capacitance
base and emitter. These effect the
frequency characteristics of the circuit.

C = Cbe ------ 2 pF ~ 50 pF
forward-biased
junction
C = Cbc ------ 0.1 pF ~ 5 pF capacitance 2
Basic data sheet for the 2N2222 bipolar transistor

Cob = Cbc  Output capacitance


Cib = Cbe  Input capacitance 3
Miller’s Theorem
 This theorem simplifies the analysis of
feedback amplifiers.
 The theorem states that if an impedance is
connected between the input side and the
output side of a voltage amplifier, this
impedance can be replaced by two
equivalent impedances, i.e. one connected
across the input and the other connected
across the output terminals.
4
Miller Equivalent Circuit
Impedance Z is connected between the V2  V1
I2 
input side and the output side of a voltage Z
amplifier..
V2   A V1
V1  V2 Z
I1  
Z 1
V2 1  
I1 I2 I2   A 
V2   A V1 Z
-A
V (1  A) V1 V2
I1  1  V1 V2 I2 
Z  Z   
   Z 
1  A   
1  1 
 A 
 
5
Miller Equivalent Circuit (cont)
V2
I2 
 
V1 -A  Z 
I1   
 Z 
1  A  1  1 
V1 ZM1 ZM2 V2  A 
 
V1  Z 
    
I1  1  A  V2  Z 
  1
I2 1  
.. The impedance Z is being
 Z   A
ZM1    replaced by two equivalent
1  A  impedances, i.e. one connected
 
across the input (ZM1) and the  Z 
other connected across the ZM 2   
output terminals (ZM2) 1  1 
 A 6
 
Miller Capacitance Effect
C
Z
ZM1  Z
1 A I1 I2 ZM 2 
-A 1
1
XC A
X CM 1  V1 V2
1 A XC
X CM 2 
1
1 1 1
 A
 CM 1  C (1  A )
1 1

CM 1  C (1  A)  CM 2 1
 C (1  )
A

CM = Miller capacitance
1
CM 2  C (1  )
A
Miller effect
Multiplication effect of Cµ
7
High-frequency hybrid- model

C
B C
+
r V C gmV ro
-

E
C = Cbe C = Cbc

8
High-frequency hybrid- model
with Miller effect
B C

r C CMi ro
g m V CMo

 1  1
C Mi  C  1  A  Cbc 1  A CMo  C 1    Cbc 1  
 A  A

Cin  C  CMi Cout  CMo

A : midband gain 9
High-frequency in Common-
emitter Amplifier
Calculation Example
VCC = 10V

Given :
 = 125, Cbe = 20 pF, Cbc = 2.4 pF, R1 RC C2 vO
VA = 70V, VBE(on) = 0.7V 22 k
2.2 k
RS C1 10 F
RL
600  10 F
2.2 k
vS R2
RE C3
4.7 k 10 F
470 
Determine :
1. Upper cutoff frequencies
2. Dominant upper cutoff frequency
10
High-frequency hybrid- model
with Miller effect for CE amplifier
RS
vo

vs R1||R2 C CMi r ro RC||RL


CMo
gmV

 R1 R2 r 
A  gm   
 r R R  56.36
 RS  R1 R2 r  o C L
 midband gain

 

C Mi  Cbc 1  A  2.4 p 57.36  137.66 pF  Miller’s equivalent


capacitor at the
input
 1
C Mo  Cbc 1    2.4 p 1.018  2.44 pF  Miller’s equivalent
 A capacitor at the
output 11
Calculation (Cont..)

Ri  RS R1 R2 r 600 22k 4.7k 1.55k  389.47  Thevenin’s equivalent


resistance at the input

Ro  RC RL ro  2.2k 2.2k 47.62k  1.08k  Thevenin’s equivalent


resistance at the output

Cin  Cbe  CMi  20 p  137.66 p  157.66 pF  total input capacitance

Cout  CMo  2.44 pF  total output capacitance

1 1
f Hi    2.59MHz  upper cutoff frequency
2Ri Cin 2 389.47 157.66 p  introduced by input
capacitance
1 1
f Ho    60.39 MHz  upper cutoff frequency
2RoCout 2 1.08k 2.44 p  introduced by output
capacitance 12
How to determine the dominant
frequency

 The lowest of the two values of upper cutoff


frequencies is the dominant frequency.
 Therefore, the upper cutoff frequency of this
amplifier is

f H  2.59 MHz

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TOTAL AMPLIFIER FREQUENCY
RESPONSE

A (dB)
ideal
Amid
-3dB actual

f (Hz)
fC1 fC2 fC3 fC4 fC5
fL fH

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Total Frequency Response of
Common-emitter Amplifier
Calculation Example
VCC = 5V

Given :
 = 120, Cbe = 2.2 pF, Cbc = 1 R1 RC C2 vO
pF, VA = 100V, VBE(on) = 0.7V 33 k
4 k
RS C1 2 F
RL
2 k 1 F
5 k
vS R2
RE C3
22 k 10 F
4 k
Determine :
1. Midband gain
2. Lower and upper cutoff frequencies
15
Step 1 - Q-point Values

VBB  VBE (on)


IB   2.615A
RB    1RE

R2
VBB   VCC  2 V
R1  R2

R1  R2
RB  R1 || R2   13.2 k
R1  R2

I CQ  I B  0.314 mA
16
Step 2 - Transistor parameters value

VT
r   9.94 k
I CQ

VA
ro   318.47 k
I CQ

I CQ
gm   12.08 mS
VT
17
Step 3 - Midband gain

Amid   g m
R
B r 
r RC RL 
RS  RB r  
o

r RB   9.94k 13.2k  5.67 k

RS  r RB   2k  9.94k 13.2k  7.67k

r o 
RC RL  318.47k 2.22k  2.18k

Amid  12.08m
5.67 k 
2.18k   19.47
7.67k  18
Step 4 - Lower cutoff frequency (fL)
1
Due to C1 1   130.38 rad / s R1S  RS  RB r  7.67 k
R1S C1

Due to C2 1 R2 S  RL  RC ro  8.95 k
2   55.87 rad / s
R2 S C2
1 R3 S  RE
r  R
S RB 
 94.26 
Due to C3 3   1060.9 rad / s  1
R3 S C3

3
 L   1 2  3  1247.15 rad / s
SCTC
method
i 1

L
Lower cutoff
frequency fL   198.49 Hz
2 19
Step 5 - Upper cutoff frequency (fH)

CMi  Cbc 1  A  1 p 20.47   20.47 pF

 1
Miller
capacitance
C Mo  Cbc 1    1 p 1.051  1.05 pF
 A
Cin  Cbe  CMi  22.67 pF
Cout  CMo  1.05 pF

Input & output


Ri  RS R1 R2 r  1.48 k
resistances
Ro  RC RL ro  2.18 k
20
Step 5 - Upper cutoff frequency (fH)

1 1
Input side f Hi    4.74MHz
2Ri Cin 2 1.48 k 22.67 p 

1 1
Output side f Ho    69.53MHz
2RoCout 2 2.18k 1.05 p 

Upper cutoff frequency


(the smallest value)
f H  4.74MHz

21
Exercise
 Textbook: Donald A. Neamen,
‘MICROELECTRONICS Circuit Analysis &
Design’,3rd Edition’, McGraw Hill
International Edition, 2007
 Exercise 7.11

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