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CHPTR 1 - Freq Response of BJT Amplifier (Part (II)
CHPTR 1 - Freq Response of BJT Amplifier (Part (II)
CHPTR 1 - Freq Response of BJT Amplifier (Part (II)
CIRCUITS 1
EKT 204
Frequency Response of
BJT Amplifiers (Part 2)
1
HIGH FREQUENCY
The gain falls off at high frequency end due to the
internal capacitances of the transistor.
Transistors exhibit charge-storage phenomena that
limit the speed and frequency of their operation.
reverse-biased
Small capacitances exist between the junction
base and collector and between the capacitance
base and emitter. These effect the
frequency characteristics of the circuit.
C = Cbe ------ 2 pF ~ 50 pF
forward-biased
junction
C = Cbc ------ 0.1 pF ~ 5 pF capacitance 2
Basic data sheet for the 2N2222 bipolar transistor
CM = Miller capacitance
1
CM 2 C (1 )
A
Miller effect
Multiplication effect of Cµ
7
High-frequency hybrid- model
C
B C
+
r V C gmV ro
-
E
C = Cbe C = Cbc
8
High-frequency hybrid- model
with Miller effect
B C
r C CMi ro
g m V CMo
1 1
C Mi C 1 A Cbc 1 A CMo C 1 Cbc 1
A A
A : midband gain 9
High-frequency in Common-
emitter Amplifier
Calculation Example
VCC = 10V
Given :
= 125, Cbe = 20 pF, Cbc = 2.4 pF, R1 RC C2 vO
VA = 70V, VBE(on) = 0.7V 22 k
2.2 k
RS C1 10 F
RL
600 10 F
2.2 k
vS R2
RE C3
4.7 k 10 F
470
Determine :
1. Upper cutoff frequencies
2. Dominant upper cutoff frequency
10
High-frequency hybrid- model
with Miller effect for CE amplifier
RS
vo
R1 R2 r
A gm
r R R 56.36
RS R1 R2 r o C L
midband gain
1 1
f Hi 2.59MHz upper cutoff frequency
2Ri Cin 2 389.47 157.66 p introduced by input
capacitance
1 1
f Ho 60.39 MHz upper cutoff frequency
2RoCout 2 1.08k 2.44 p introduced by output
capacitance 12
How to determine the dominant
frequency
f H 2.59 MHz
13
TOTAL AMPLIFIER FREQUENCY
RESPONSE
A (dB)
ideal
Amid
-3dB actual
f (Hz)
fC1 fC2 fC3 fC4 fC5
fL fH
14
Total Frequency Response of
Common-emitter Amplifier
Calculation Example
VCC = 5V
Given :
= 120, Cbe = 2.2 pF, Cbc = 1 R1 RC C2 vO
pF, VA = 100V, VBE(on) = 0.7V 33 k
4 k
RS C1 2 F
RL
2 k 1 F
5 k
vS R2
RE C3
22 k 10 F
4 k
Determine :
1. Midband gain
2. Lower and upper cutoff frequencies
15
Step 1 - Q-point Values
R2
VBB VCC 2 V
R1 R2
R1 R2
RB R1 || R2 13.2 k
R1 R2
I CQ I B 0.314 mA
16
Step 2 - Transistor parameters value
VT
r 9.94 k
I CQ
VA
ro 318.47 k
I CQ
I CQ
gm 12.08 mS
VT
17
Step 3 - Midband gain
Amid g m
R
B r
r RC RL
RS RB r
o
r o
RC RL 318.47k 2.22k 2.18k
Amid 12.08m
5.67 k
2.18k 19.47
7.67k 18
Step 4 - Lower cutoff frequency (fL)
1
Due to C1 1 130.38 rad / s R1S RS RB r 7.67 k
R1S C1
Due to C2 1 R2 S RL RC ro 8.95 k
2 55.87 rad / s
R2 S C2
1 R3 S RE
r R
S RB
94.26
Due to C3 3 1060.9 rad / s 1
R3 S C3
3
L 1 2 3 1247.15 rad / s
SCTC
method
i 1
L
Lower cutoff
frequency fL 198.49 Hz
2 19
Step 5 - Upper cutoff frequency (fH)
1
Miller
capacitance
C Mo Cbc 1 1 p 1.051 1.05 pF
A
Cin Cbe CMi 22.67 pF
Cout CMo 1.05 pF
1 1
Input side f Hi 4.74MHz
2Ri Cin 2 1.48 k 22.67 p
1 1
Output side f Ho 69.53MHz
2RoCout 2 2.18k 1.05 p
21
Exercise
Textbook: Donald A. Neamen,
‘MICROELECTRONICS Circuit Analysis &
Design’,3rd Edition’, McGraw Hill
International Edition, 2007
Exercise 7.11
22