Professional Documents
Culture Documents
EC Chapter 01
EC Chapter 01
Autumn-2020
Course Books
Textbook: Electronic Devices by Thomas L. Floyd
Conventional Current Version,
9th Edition
Reference Book:
Microelectronic Circuits by Adel
Sedra/Smith,
6th Edition
Course Learning Outcomes
Bloom’s
S.
Course Learning Outcome (CLO’s) Learning
No. Level
1. C2
Explain the basic construction, operation and
characteristics of diodes and transistors.
3. Apply the acquired knowledge of semiconductor C3
devices to design, implement and troubleshoot small-
scale circuits.
4 Analyze dc and ac response of circuits containing C4
semiconductor device.
Policies
Assignments: Grading Policy:
– Assignments will be
handwritten, submitted in
proper folder.
– No plagiarism and
copying as per HEC Policy.
Quizzes:
Quizzes may be announced /
unannounced.
Attendances:
75% (min)
(Lab and Th. both)
Attendance less than 75% is
not allowed for any reason
including:
Illness, Family Issues, Visa etc.
Course Outline
• Semiconductor Materials
• Diode
• BJT
• FET
– Internal Structure
– Operation
– Biasing
– Applications
Chapter 1
INTRODUCTION
Objectives
Discuss basic operation of a diode
Discuss the basic structure of atoms
As seen in this
model, electrons
circle the nucleus.
Atomic structure of a
material determines
it’s ability to conduct
or insulate.
Electrons & Shells
Electrons orbits the nucleus at certain distances
Electrons near the nucleus has less energy as compared to the
electrons in distant orbits
Discrete values of electrons energies exist so distance of electrons
from nucleus is also fixed
Orbits of same energies are grouped as shells
Each shell has a defined number of electrons it will hold. This is a
fact of nature and can be determined by the formula, 2n2.
The outermost shell is called valence shell
Number of electrons in valence shell determine the chemical &
electrical properties of the element
If an atom loses a valence electron, positive ion is formed
If an extra electron is added to valence shell, negative ion is formed
The Quantum Model
• Unlike Bohr’s Model, electrons do not circulate in fixed
circular orbits
– Wave-particle duality
– Uncertainly principle
• Each shell comprises orbitals s(2),p(6),d(10),f(14)
• Quantum representation of Si, atomic number:14
Conductors, Insulators, and Semiconductors
N-type P-type
The Depletion Region
p region n region p region n region
Voltage source or bias connections are Voltage source or bias connections are –
+ to the p material and – to the n to the p material and + to the n material
material
Bias must be less than the break down
Bias must be greater than .3 V for voltage.
Germanium or .7 V for Silicon diodes.
Current flow is negligible in most cases.
The depletion region narrows. The depletion region widens.
Forward Bias Measurements With Small Voltage
Applied
In most cases we
consider only the
forward bias voltage
drop of a diode. Once
this voltage is
overcome the current
increases
proportionally with
voltage.This drop is
particularly important
to consider in low
voltage applications.
Complex Characteristic Curve of a Diode
The voltage drop is not
the only loss of a diode.
In some cases we must
take into account other
factors such as the
resistive effects as well
as reverse breakdown.
Diode approximations
Electronic Devices
VR VF VR VF VR VF
0.7 V 0.7 V
IR IR IR
3.3 kW
+
VBIAS 12 V
–
Example
Electronic Devices
3.3 kW
+
VBIAS 12 V
–
3.3 kW
+
VBIAS 12 V
–
3.3 kW
+
VBIAS 12 V
–
Open Diode
In the case of an open diode no current flows in either
direction which is indicated by the full checking voltage
with the diode check function or high resistance using an
ohmmeter in both forward and reverse connections.
Shorted Diode
In the case of a shorted diode maximum current flows
indicated by a 0 V with the diode check function or low
resistance with an ohmmeter in both forward and reverse
connections.
Diode Packages
K
A
K A
K K
A A
K
K
A
Summary
Diodes, transistors, and integrated circuits are
all made of semiconductor material.
P-materials are doped with trivalent impurities
N-materials are doped with pentavalent impurities
P and N type materials are joined together to form a
PN junction.
A diode is nothing more than a PN junction.
At the junction a depletion region is formed. This
creates barrier which requires approximately 0.3 V
for a Germanium and 0.7 V for Silicon for conduction
to take place.
Summary