Nanoscale Transistors

Unit 5 : Circuit Design Using CMOS

5.3: Analog Circuit Design Blocks

by
Dr. M. Gulam Nabi Alsath
Associate Professor/ECE
SSN College of Engineering
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 Session Meta Data

Author Dr. M. Gulam Nabi Alsath

Version No 1.1

Release Date 05-12-2021

Reviewer

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 Revision History

Date of Revision Details Version Number

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 Session Objectives

 To discuss the analog circuit design blocks using multi-

gate MOSFET

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 Session Outcomes

 At the end of the session, students will be able to

 Understand the design blocks in Analog circuit
design

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 Outline

 Design of Analog building bocks

 Bandgap reference voltage

 Operational Amplifier

 Comparator

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 Bandgap Reference Voltage

 The circuits are intended to generate reference voltage V ref independent of VDD,

independent of temperature and process variations.

 To eliminate temperature dependence of Vref : sum up two voltages with positive

and negative temperature coefficient respectively.

 Diodes & Transistors – Negative temperature coefficient

 Difference of two diode voltages with unequal areas serves for the positive

temperature coefficient

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 Example Circuit

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 FD-MuGFET-Limitations

 The need for pn-diodes to realize bandgap references represents a serious problem

in fully depleted multi-gate SOI technologies, because intrinsic pn-junctions are

not available.

 A possible alternative is the use of gated diodes called Lubistors.

 They consist of standard n- or p- type transistors where one of the source/drain

implants is inverted.

 One can obtain either p+-i-n+ or p+-p/n-n+ diodes, depending on the doping of the

fin.

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 Temperature Dependence

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 Operational Amplifier

 Operational amplifiers (OPAs) are important building blocks for many

applications, e.g. for AD or DA converter circuits.

 Figures of merit are gain-bandwidth product (GBW), open loop voltage gain (A 0)

and power consumption (P).

 Open-loop gain and gain-bandwidth product are determined by the small signal

parameters gm and gds

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 Miller Compensated Operational Amplifier

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 Operational Amplifier

 High intrinsic gain of MuGFETs is beneficial for these figures of merit.

 A0, GBW, phase margin and load capacitance are 50 dB, 10 MHz, 60° and 5 pF

respectively

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 Comparator

 Comparators are essential building blocks for AD converters

 The decision speed determined by the bias current through the differential pair

and the load capacitance is probably the most important design parameter of the

comparator.

 Potential issue – Charge trapping in Multi-gate Comparators

 Include the charge trapping model in simulation

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 Schematic of Comparator

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 Right & Wrong Decisions

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 Test your Understanding

How to mitigate the component level effects in Analog circuit Design?

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 Reference

1.Colinge JP, FINFETs and other multi-gate transistors, Springer–

Series on integrated circuits and systems, 2008 .