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  • Beula-CMOS INVERTER

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    Philip Austin
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    CMOS (complementary metal-oxide semiconductor) is a semiconductor technology that uses both NMOS and PMOS transistors. CMOS transistors are based on MOSFET technology. CMOS circuits use both PMOS and NMOS transistors to create logic gates like inverters. CMOS inverters have high input impedance, low power dissipation, and good noise immunity but require more space on integrated circuits than NMOS-only designs.

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    CMOS (complementary metal-oxide semiconductor) is a semiconductor technology that uses both NMOS and PMOS transistors. CMOS transistors are based on MOSFET technology. CMOS circuits use both PMOS and NMOS transistors to create logic gates like inverters. CMOS inverters have high input impedance, low power dissipation, and good noise immunity but require more space on integrated circuits than NMOS-only designs.

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    Beula-CMOS INVERTER

    Uploaded by

    Philip Austin
    CMOS (complementary metal-oxide semiconductor) is a semiconductor technology that uses both NMOS and PMOS transistors. CMOS transistors are based on MOSFET technology. CMOS circuits use both PMOS and NMOS transistors to create logic gates like inverters. CMOS inverters have high input impedance, low power dissipation, and good noise immunity but require more space on integrated circuits than NMOS-only designs.

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    CMOS

    S.Beula
    CMOS
    •  complementary metal-oxide semiconductor
    (CMOS) is the semiconductor technology used
    in most of today's integrated circuits (ICs), also
    known as chips or microchips.
    • CMOS transistors are based on metal-oxide
    semiconductor field-effect transistor (MOSFET
    ) technology. 
    Cross sectional view of CMOS
    NMOS

    NMOS is built on a p-type substrate with n-


    type source and drain diffused on it.

    In NMOS, the majority of carriers are


    electrons. When a high voltage is applied
    to the gate, the NMOS will conduct.

    Similarly, when a low voltage is applied to


    the gate, NMOS will not conduct.
    PMOS
    •P- channel MOSFET consists of P-type
    Source and Drain diffused on an N-type
    substrate. The majority of carriers are
    holes.
    •When a high voltage is applied to the
    gate, the PMOS will not conduct. When a
    low voltage is applied to the gate, the
    PMOS will conduct.
    • The PMOS devices are more immune to
    noise than NMOS devices.
    Pull Up and Pull down
    CMOS Inverter
    • It consists of PMOS and NMOS FET. The input A serves as the
    gate voltage for both transistors.
    • The NMOS transistor has input from Vss (ground) and the
    PMOS transistor has input from Vdd. The terminal Y is output.
    When a high voltage (~ Vdd) is given at input terminal (A) of
    the inverter, the PMOS becomes an open circuit, and NMOS
    switched OFF so the output will be pulled down to Vss.
    • When a low-level voltage (<Vdd, ~0v) applied to the inverter,
    the NMOS switched OFF and PMOS switched ON. So the
    output becomes Vdd or the circuit is pulled up to Vdd.

    Input Logic input output Logic output


    0 0 vdd 1
    vdd 1 0v 0
    CMOS inverter current versus Vin
    Advantages
    •  uses a single power supply like + VDD
    • These gates are very simple
    • Input impedance is high
    • Power dissipation is negligible
    • Stability of temperature
    • Noise immunity is good
    Disadvantages
    • The CMOS inverter disadvantages include the
    following.
    • As compared to other inverters, the switching
    speed of the CMOS inverter is high.
    • These are very difficult to fabricate due to both
    the transistors used on the same Silica piece.
    • It uses two transistors to make an inverter, so it
    uses more space on the IC as compared to the
    NMOS inverter.

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