MYANMAR AEROSPACE ENGINEERING UNIVERSITY

Department of Electrical Systems & Instrumentation

EI – 5007 Analysis and Design of Converter

Topic – Power Electronic System Week – 1 (D2)

1
 Outlines of Presentation
- Objectives
- JFET
- References

2
 Objectives

- Describe the types of transistors

- Apply BJT, MOSFET,FET and IGBT in electronics ckt
- Apply driver ckt for MOSFET and IGBT

3
 Junction Field Effect Transistor
- three terminals (Gate, Drain, Source )
- mode –depletion
- type – n-channel (negative charges) ,p- channel (positive charges)
- voltage controlled device (VGS control ID)
- unipolar
- channel – current path between two terminals which may be either a P-type or N-type material
- The control of current flowing in this channel is achieved by varying the voltage applied to the Gate
- biasing – to be formed depletion layer whose width increase the bias
- reverse bias – N channel (gate – negative)
- P channel (gate – positive)

4
Continued;
- operation regions – ohmic – VGS = 0, depletion region is very small ,
- pinched-off –called as cutoff region, channel closes
- saturation -acts as a good conductor
- breakdown - drain to source voltage (VDS) is high enough, uncontrolled maximum
current passes through the device

5
Continued;

Fig.1 N-channel JFET

Fig.2 P-channel JFET

6
Continued;

N channel used as a switch

P channel used as a switch

7
 References

(1) https://www.electronicshub.org/fet-as-a-switch/
(2) https://www.electronics-notes.com/articles/electronic_components/fet-field-effect-transistor/jfet-junction-basi
cs.php
(3) https://byjus.com/physics/junction-field-effect-transistor/