UNIT 4 : PN Junc.

Diode

• Diode and its uses

• NPN and PNP transistor
• MOSFET (Intro, symbol, configuration)
• Op-Amp (features, virtual ground, inverting, non-inverting)
• Logic gates, Boolean Algebra and conversion

Lectures on Unit 4 ECE249

prepared by Haziqul Yaquin
What is a Transistor?
• Semiconductors: ability to change
from conductor to insulator
• Can either allow current or prohibit
current to flow
• Useful as a switch, but also as an
amplifier
• Essential part of many technological
advances
 npn bipolar junction transistor

pnp bipolar junction transistor

 BJT characteristics
• Current Gain:
• α is the fraction of electrons that diffuse across
I C  I E
the narrow Base region (it is always less than 1
because Ic is always less than Ie) I B  (1   ) I E
• 1- α is the fraction of electrons that recombine
with holes in the Base region to create base IC 
current  
• The current Gain is expressed in terms of the β IB 1
(beta) of the transistor (often called hfe by
manufacturers).
• β (beta) is Temperature and Voltage dependent.
• It can vary a lot among transistors (common
values for signal BJT: 20 - 200).
• IE = I B + I C
 BJT NPN Transistor
• 1 thin layer of p-type, sandwiched between 2 layers of n-type.
• N-type of emitter: more heavily doped than collector.
• With VC>VB>VE:
• Base-Emitter junction forward biased, Base-Collector reverse biased.
• Electrons diffuse from Emitter to Base (from n to p).
• There’s a depletion layer on the Base-Collector junction no flow of e-
allowed.
• BUT the Base is thin and Emitter region is n+ (heavily doped)  electrons have
enough momentum to cross the Base into the Collector.
• The small base current IB controls a large current IC
 NPN Common Emitter circuit
• Emitter is grounded.
• Base-Emitter starts to conduct with VBE=0.6V,IC flows and it’s IC=b*IB.
• Increasing IB, VBE slowly increases to 0.7V but IC rises exponentially.
• As IC rises ,voltage drop across RC increases and VCE drops toward ground.
(transistor in saturation, no more linear relation between IC and IB)
 Common Emitter characteristics

Collector current Collector current

The avalanche
controlled by the proportional to
multiplication of
collector circuit. Base current
current through
(Switch behavior)
collector junction
In full saturation occurs: to be
VCE=0.2V. avoided

No current flows
 BJT as Switch
•Vin(Low ) < 0.7 V
• BE junction not forward
biased
• Cutoff region
• No current flows
• Vout = VCE = Vcc
•Vout = High
•Vin(High)
• BE junction forward biased (VBE=0.7V)
• Saturation region
• VCE small (~0.2 V for saturated BJT)
• Vout = small
• IB = (Vin-VB)/RB
 BJT as Switch 2
• Basis of digital logic circuits
• Input to transistor gate can be analog or digital
• Building blocks for TTL – Transistor Transistor Logic
• Guidelines for designing a transistor switch:
• VC>VB>VE
• VBE= 0.7 V
• IC independent from IB (in saturation).
• Min. IB estimated from by (IBmin» IC/b).
• Input resistance such that IB > 5-10 times IBmin because b varies
among components, with temperature and voltage and RB may change
when current flows.
• Calculate the max IC and IB not to overcome device specifications.
BJT as Amplifier
•Common emitter mode
•Linear Active Region
•Significant current Gain
Example:
•Let Gain, b = 100

•Assume to be in active
region -> VBE=0.7V

•Find if it’s in active

region
BJT as Amplifier
VBE  0.7V
I E  I B  I C  (   1) I B
VBB  VBE 5  0.7
IB    0.0107mA
RB  RE *101 402
I C   * I B  100 * 0.0107  1.07mA
VCB  VCC  I C * RC  I E * RE  VBE 
 10  (3)(1.07)  (2)(101* 0.0107)  0.7 
 3.93V

VCB>0 so the BJT is in

active region
 Operation region summary

Operation IB or VCE BC and BE Mode

Region Char. Junctions
Cutoff IB = Very Reverse & Open
small Reverse Switch
Saturation VCE = Small Forward & Closed
Forward Switch
Active VCE = Reverse & Linear
Linear Moderate Forward Amplifier
Break- VCE = Large Beyond Overload
down Limits
Virtual ground
Logic gate and Boolean Algebra
 Switching network
 One or more inputs
 One or more outputs
 Two Types
 Combinational
 The output depends only on the present values of the
inputs
 Logic gates are used
 Sequential
 The output depends on present and past input values
Boolean Algebra
.
Inputs
.
Network Outputs
.
.
.
.

• Boolean Algebra is used to describe the relationship

between inputs and outputs
• Boolean Algebra is the logic mathematics used for
understanding of digital systems

Boolean Algebra and Logic Gates 84

• Basic gates

• COMPLEMENT (INVERSE) = NOT Gate

0 is low voltage
1 is high voltage

Boolean Algebra and Logic Gates 85

AND
OR
Basic formulae/expressions/theorems
Simplification theorems
'
1. XY  XY  X
'
2. ( X  Y )( X  Y )  X
3. X  XY  X
4. X (X Y)  X
'
5. ( X  Y )Y  XY
'
6. XY  Y  X  Y
90
Develop the expression :

F=?
 ' ' ' '
Develop the circuit : F  XYZ  XY Z  X Y