Improvement of Spontaneous Emission Factor of Quantum

Dot Based LASER Using InN

Presented by:
Md. Abdur Rahim (173800022)
K.M Shadat Islam Shebli (173800026)
Roni Talukder (173800033)

Supervised by:
Dr. Md. Abdullah Al Humayun
Associate Professor, Department of EEE
Eastern University, Bangladesh
2 OUTLINE

 INTRODUCTION
 PROBLEM STATEMENT
 OBJECTIVE
 METHODOLOGY
 RESULT AND DISCUSSION
 CONCLUSION
 FUTURE SCOPE
3 INTRODUCTION

 Spontaneous Emission Factor (C) is the ratio of spontaneous emission to stimulated emission.

 Firstly , in this research work we highlights the effect of a) Wavelength b) Energy band gap and c)
Effective density of states on spontaneous emission factor and Its rate of change using InN, GaN and
AlN semiconductor based QD, QWR and QW as the active layer material of LASER structure and its
performances.

 Secondly, we also highlight that there is no effect of temperature on spontaneous emission factor on
QD based laser.

 Finally, from the outcome of the comparative analysis through numerical approach it is ascertained that
Indium Nitride (InN) based Quantum Dot is the most promising material for the active layer material
of laser structure.
4 LASER FUNDAMENTALS

 The word "laser" is an acronym for “Light Amplification by Stimulated Emission of Radiation”.

 A laser is a device that emits light through a process of optical amplification based on the

stimulated emission of electromagnetic radiation.

 Properties (Monochromatic and coherence, narrow linewidth )

 In the life science, medical science, communication system and even in nuclear fusion and many

resource projects are being carried out using laser.

5 PROBLEM STATEMENT
 Lower spontaneous emission factor
 A wide range of materials are available to design lasers, however different
materials have different drawbacks. So it is challenging to find suitable
material to design a QDL.

OBJECTIVE
 To achieve high spontaneous emission factor of QDL
 To achieve reasonable rate of change of spontaneous emission factor of QDL
 To achieve better stability of spontaneous emission factor at with respect to wavelength,
temperature and Energy bandgap.
 Start
6
FLOWCHART
Literature Review

Problem Statement

Numerical
Modelling

Report

End
7 TYPE OF SEMICONDUCTOR MATERIALS

Figure 2: Schematic diagram of the DOS in the CB, VB for a (a) Bulk, (b) QW, (c) QWR, and (d) QD laser
8 DECIVE STRUCTURE

Contact layer

Upper cladding layer

Guiding layer

QDs Active layer

Guiding layer

Lower cladding layer

Contact layer

substrate

Figure 3.1: Schematic layer structure of QDL

911 NUMERICAL MODELLING
The Spontaneous emission factor C is expressed
as;
 C= ………….. (1)
 …………… (2)
 ……….… (3)
 C= …………... (4)
 …………..(5)
 C=× ………… (6)
 …….. (7)
10
10
Table 2: The number of degrees of freedom in the electron
Table 1: Numerical values of equation parameters
motion, together with the extent of the confinement for the
four basic types of semiconductor materials

PATAMETER VALUE Materials Type

Bulk 0 3
p 1.5
QW 1 2
Γr , ,1 [QW,QWR,QD] QWR 2 1
QD 3 0
1

1.8 µm3

c 3×10^8 m/s
Confinement factor, Γr =
h 6.63×10-34 (JS)
11 Table 3: Numerical values of different types of materials parameter.

PARAMETER GaN AlN InN

Eg (0 K) (eV) 3.51 6.25 0.69

Eg (300 K) (eV) 3.43 6.14 0.64

Wavelength() 0.363 0.21 1.94

λ=hc/Eg (300 K)
At conduction band, 1.2×1018 6.3×1018 0.9×1018
Effective density of states (cm-3)

γ (10-4 eV/K) 0.909 1.799 0.414

 
(K) 830 1462 454
 12 RESULT AND DISCUSSION
14
Spontaneous Emission Factor vs Wavelength for InN Spontaneous Emission Factor vs Wavelength for AlN Spontaneous Emission Factor vs Wavelength for GaN
0.8 0.7 0.35
QW
QW QW
QWR
QWR
0.7 0.6 QWR
QD QD 0.3
QD

Spontaneous Emission Factor (C)

0.6
0.5 0.25
Spontaneous Emission Factor (C)

Spontaneous Emission Factor (C)

0.5
0.4 0.2
0.4
0.3 0.15
0.3
0.2 0.1
0.2

0.1 0.05
0.1

0 0
0 0 0.5 1 1.5 2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Wavelength (m) Wavelength (m) Wavelength (m)

Figure 4.1 Wavelength dependence of Figure 4.2 Wavelength dependence of Figure 4.3 Wavelength dependence of
spontaneous emission factor using InN spontaneous emission factor using AlN based spontaneous emission factor using GaN
based QD, QWR and QW as the active QD, QWR and QW as the active layer based QD, QWR and QW as the active layer
layer material. material.
material.
13
15 RESULT AND DISCUSSION

Spontaneous Emission Factor vs Wavelength Rate of change of Spontaneous Emission Factor vs Wavelength
4.5

Rate of change of Spontaneous Emission Factor

2.5
GaN GaN
AlN 4 AlN
InN InN
2 3.5
Spontaneous Emission Factor (C)

1.5
2.5

2
1
1.5

1
0.5
0.5

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2
Wavelength (m) Wavelength (m)

Figure 5.1 Wavelength dependence of spontaneous Figure 5.2 Wavelength dependence of the rate of change of
emission factor using AlN, InN, and GaN based QD spontaneous emission factor using AlN, InN, and GaN based
as the active layer material. QD as the active layer material.
 14 RESULT AND DISCUSSION
16
Spontaneous Emission Factor vs Energy band gap for InN Spontaneous Emission Factor vs Energy band gap for AlN Spontaneous Emission Factor vs Energy band gap for GaN
1.4 3.5 0.5
QW QW QW
QWR QWR 0.45 QWR
1.2 3 QD QD
QD
0.4

1 2.5 0.35
Spontaneous Emission Factor (C)

Spontaneous Emission Factor (C)

Spontaneous EmissionFactor (C)

0.3
0.8 2
0.25
0.6 1.5 0.2

0.15
0.4 1
0.1
0.2 0.5
0.05

0 0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
Energy band gap (eV) Energy band gap (eV) Energy band gap (eV)

Figure 6.1 Energy band gap dependence of Figure 6.3 Energy band gap dependence of
Figure 6.2 Energy band gap dependence of
spontaneous emission factor using InN spontaneous emission factor using GaN
spontaneous emission factor using AlN based
based QW, QWR & QD as the active layer based QD, QWR and QW as the active layer
QD, QWR and QW as the active layer material.
material. material.
15 17
RESULT AND DISCUSSION

Spontaneous Emission Factor vs Energy band gap Spontaneous Emission Factor vs Energy band gap
10
GaN 3.5 0.014
S pontaneous E m ission F actor (C )

9 AlN GaN GaN

InN 3 AlN 0.012
8 AlN
InN InN
7 2.5 0.01

Spontaneous EmissionFactor (C)

6
2 0.008
5

4 1.5 0.006
3
1 0.004
2
0.5 0.002
1

0 0 0
0 1 2 3 4 5 6 7 0.5 1 1.5 2 2 3 4 5 6 7
Energy band gap (eV) Energy band gap (eV)

Figure 7.1 Energy band gap dependence spontaneous Figure 7.2 subplot of Energy band gap dependence spontaneous
emission factor of QDL using AlN, InN and GaN based emission factor of QDL using AlN, InN and GaN based QD as the
QD as the active layer material. active layer material.
16
18
RESULT AND DISCUSSION
Spontaneous Emission Factor vs Energy band gap
3.5 0.014 Rate of change of Spontaneous Emission Factor vs Energy bandgap
30 0.03
GaN GaN
GaN GaN
3 AlN 0.012 AlN AlN AlN
InN InN 25 0.025
InN InN
2.5 0.01
20 0.02

Rateof changeof Spontaneous EmissionFactor

2 0.008
issionFactor(C)

15 0.015
1.5 0.006
SpontaneousEm

1 0.004 10 0.01

0.5 0.002 5 0.005

0 0 0 0
0.5 1 1.5 2 2 3 4 5 6 7 0.5 1 1.5 2 2 3 4 5 6 7
Energy band gap (eV) Energy bandgap (eV)

Figure 8.1 subplot of Energy band gap dependence

spontaneous emission factor of QDL using AlN, InN Figure 8.2 Subplot of Energy band gap dependence the rate
and GaN based QD as the active layer material. of change of spontaneous emission factor of QDL using AlN,
InN and GaN based QD as the active layer material.
17 RESULT AND DISCUSSION
19

Spontaneous emission factor vs Effective density of states

10
AlN
5

0
Spontaneous Emission Factor (C)

0.5 1 1.5 2

50
GaN

0
0.5 1 1.5 2
4
x 10
4
InN
2

0
0.5 1 1.5 2
-
Effective density of states (cm 3)

Figure 9.1 Effective density of states dependence Figure 9.2 Presents the effect of temperature on the
the spontaneous emission factor of QDL using AlN, spontaneous emission factor using AlN, InN, and GaN
InN and GaN based QD as the active layer material. based QD in the active layer of the laser structure.
18 CONCLUSION

 Improvement of spontaneous emission factor open a fundamentally new pathway for

researching of LASER.
 The wavelength, Energy band gap, Effective density of states and Temperature
dependence of semiconductor laser have been analyzed considering spontaneous
emission factor.
 By numerical approach it is ascertained that there is no effect of temperature on
spontaneous emission factor on QD based laser.
 From the outcome of the comparative analysis through numerical approach it is
ascertained that Indium Nitride (InN) based Quantum Dot Laser is the most promising
material for the active layer material of laser structure.
19
FUTURE SCOPE

 To know proper explanation why doesn't effect of temperature on spontaneous emission

factor of quantum dot laser using InN based active layer material.
 To investigate effect of other parameters like: volume, photon life time, cavity length,
etc. on spontaneous emission factor of quantum dot laser using InN based active layer
material.
20

THANK YOU