WETBULK MICROMACHINING OF SILICON

IN KOH SOLUTION

BY:
JANE ELONA J(2021254026)
MALINI S S(2021254039)
 INTRODUCTION

 Silicon wet bulk micromachining is a favorable technology for the fabrication of micro/nano-electromechanical systems
(M/NEMS).
 In wet anisotropic etching based silicon bulk micromachining ,potassium hydroxide (KOH) and Tetramethylammonium
hydroxide (TMAH) are most popular etchants.
 KOH provides high etch rate and high anisotropy between Si{100}/Si{110} and Si{111} planes.
 The addition of NH2OH improves the etching characteristics dramatically, especially the etch rate and undercutting at convex
corners are increased considerably.
 Si{111} wafers are employed for specific applications such as fabrication of complicated structures using deep reactive ion
etching (DRIE) assisted wet anisotropic etching.
 In this work, Etching characteristics of Si{111} such as etch rate, undercutting surface morphology are methodically studied in
modified KOH by the addition of NH2OH.
 EXPERIMENTAL DETAILS

 Czochralski grown p-pipe doped Si{111} wafers of 4 inch diameter with 1-10 ohms cm resistivity are used silicon
dioxide (SiO2) of 1micro meter thickness is used as structural and mask layer.
 Oxide layer is patterned using photolithography and photoresist layer is removed by acetone followed by cleaning in
running deionized (DI) water.
 In this step of cleaning, a very thin oxide layer is chemically grown, which is removed in 1% HF solution by dipping the
chips for 1min.
 Etching experiments are carried out in 20wt% KOH without and with addition oh NH 2OH at 75 degree Celsius.
 The concentration of NH2OH is varied from 5-20% in step of 5 %.The primary objective of the addition of NH 2OH is to
increase etch rate.
 EXPERIMENTAL DETAILS

 KOH solution with concentration in between of 15-25wt% exhibits maximum etch rate.
Therefore 20wt% KOH is selected as the main etchant.
 Constant temperature bath is used to maintain the constant temperature during etching
process. Reflex condenser is used to avoid change in etchant concentration due to
evaporation of water.
 Etch rate, undercutting and surface roughness are inspected using 3D laser scanning
microscope, while scanning electron microscope is used to investigate etched surface
morphology.
 The etch rate of SiO2 is measured using spectroscopic ellipsometry.
a)Cantilever shape mask pattern.
b)Lateral undercutting rate.
c)Lateral undercutting ratio.