Electronics 2 Practical's tutorial

letter 102.(Experiments)
ECTPRA2 2022

Authors:
Prof. Patrice Umenne (UNISA)
 Experiments (Content)

• Experiment 1
Bipolar Junction Transistor
• Experiment 2
Transistor Bias Circuits
• Experiment 3
BJT Amplifiers
• Experiment 4
Field Effect Transistors (FET’s)
 Experiment 1
Bipolar Junction Transistors
Figure Instructions
•  
RC
250Ω

VCC
-5 V
Q1
RB

5kΩ
2N3906* BDC = 250
VBB
-3 V
 Experiment 2
Transistor bias circuit
Figure Instructions
VCC
-13V •  

R1 RC
46kΩ 3.8kΩ

Q1

BDC = 70

R2 RE
6.4kΩ 760Ω
 Experiment 3
BJT Amplifiers
Figure Instructions
VCC
16V
•  

RC
R1 580Ω
26kΩ
C3 Vout
Q1 10µF
Rs C1

120Ω 10µF
BD135* BDC = Bac = 180
R2
Vin 7.2kΩ RL
1.3kΩ
20mVrms
10kHz RE
0° C2
400Ω
100µF
 Experiment 4
Field Effect Transistors
Figure Instructions
VDD • Use MultiSim to connect the circuit in the figure.
13V
• Use an n-channel JFET model number 2N3821.
• Do not edit the model parameters of the JFET use it as it
is.
• Connect an ammeter in series with to measure the drain
current , a voltmeter in parallel to the n-channel JFET to
R1 RD
8.3MΩ 2.2kΩ
measure drain-source voltage , a voltmeter to measure
drain voltage , a voltmeter to measure the gate voltage
and finally a voltmeter to measure the source voltage .
Q1 • Run the simulation.
• Print screen to get the image.
• Use the data to complete the table and then determine
2N3821 the measured for the n-channel JFET.
R2
• Modify the circuit by changing the value of from 8.3 MΩ
2.4MΩ RS to 10 MΩ. Re-run the simulation and complete the
2.9kΩ similar table.
• Again determine the new measured gate source voltage
for the n-channel JFET from the new table.