Unit 2

You might also like

Download as pptx, pdf, or txt
Download as pptx, pdf, or txt
You are on page 1of 56

Unit-2 : Low and mid frequency transistor models

Topics

 1.Introduction to h-parameters.
2.The hybrid model for 2-port network.
3.Transistor hybrid model, conversion formulas for the
parameters of the three transistor configuration.
4.Analysis of a transistor amplifier using h-parameters and
6.Analysis of a transistor amplifier using re model.
7.Relation between hybrid and re model
Operating Point
. The intersection of the load line with the V-I curve of BJT gives the
operating point for that BJT , referred to as the Q-point. The regions
of interest in a transistor are
IC
the amplifying region, cutoff region
Collector
and the saturation region. +
IC
V
CC Base
R +R + VCE
C E
IB
I CQ
Q
IB VBE
IE -
Emitter
VCQ V VCE
Q CC
Operating Point
When the transistor is biased in the active region it operates as an
amplifier. The biasing problem is that of establishing a constant DC
current in the emitter (or the collector) which is insensitive to
variations in temperature and so on. This is equivalent to designing
the transistor circuit so that the Q-point is in the middle of the DC
load line. Changing the biasing resistors has the effect of shifting the
Q-point along the DC load line, moving the transistor into the regions
of cutoff or saturation. The amplification property can be graphically
interpreted as in Fig. in next slide.
DC Analysis of BJTs
• DC voltages for the biased transistor:
• Collector voltage
VC = VCC - ICRC
• Base voltage
VB = VE + VBE

• for silicon transistors, VBE = 0.7 V


• for germanium transistors, VBE = 0.3 V
Q-point

• The base current, IB, is


established by the base bias
• The point at which the base
current curve intersects the
dc load line is the quiescent
or Q-point for the circuit
Q-point
BJT Amplifiers
Amplifier Operation: The biasing of a transistor is purely a dc
operation to establish a Q-point about which variations in current and
voltage can occur in response to an ac input signal
AC Quantities
Representation of Vce
 ac and dc quantities are usually
represented by capital letters with a change
in the subscripts
 dc quantities: capital non-italic

subscripts like IB, IC, IE, VC, VE, VCE


 ac quantities: small italic subscripts,

for example, Ic, Ie, Ib, Vc, and Vce


 ac quantities may be represented in rms, instantaneous
average, peak, peak to peak. rms values
will
 acbe used unless otherwise stated.
instantaneous quantities are represented by small letters with
Lowercase small italic subscripts like ic, ie, ib, vc, and vce
 Resistance is also identified with a small letter of small subscript when
analyzed from an ac standpoint.
Amplifier Operation:
The linear amplifier
 A linear amplifier provides amplification of a signal without any
distortion  output signal is an exact amplified replica of the input signal.

ac source of internal
resistance Rs coupled
to the base through C1

Load resistance
 The coupling capacitors block dc and thus RL coupled to
prevent Rs and RL from changing the dc bias the collector
voltages at the base and collector. through C2
 For the amplifier shown, notice that the voltage waveform is inverted
between the input Vband output Vce but has the same shape.
Amplifier Operation:
AC Load Line
 Operation of the linear amplifier can be illustrated using an ac load line as
shown.

 The ac load line is different than the dc load line because a capacitor
looks open to dc but effectively acts as a short to ac  the collector resistor
RC appears to be in parallel with the load resistor RL.
Amplifier Operation:
Example: a) Determine the resulting peak-to-peak values of collector
current and collector-to-emitter voltage from the graph. b) What are the dc
Q-point values
a)
collector current varying
from 4 mA to 6 mA 
collector current has peak-
to-peak value of 2 mA
(Ic = 2 mA)

And Vce = 1 V

b)
IBQ = 50 μA
ICQ = 5mA
VCEQ = 1.5V
INTRODUCTION:TRANSISTOR MODELING

• To begin analyze of small-signal AC response of BJT


amplifier the knowledge of modeling the transistor is
important.
• The input signal will determine whether it’s a small
signal (AC) or large signal (DC) analysis.
• The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough to
“keep things linear” (i.e.: not distort too much) [3]
• There are two models commonly used in the small signal
analysis:
a) re model
b) hybrid equivalent model
11
How does the amplification be done?
• Conservation; output power of a
system cannot be large than its
input and the efficiency cannot
be greater than 1
• The input dc plays the important
role for the amplification to
contribute its level to the ac
domain where the conversion
will become as η=Po(ac)/Pi(dc)
• Simply speaking…

12
Disadvantages
• Re model
• Fails to account the output impedance level of device and feedback effect
from output to input
• Hybrid equivalent model
• Limited to specified operating condition in order to obtain accurate result

13
DC supply  • O/p coupling
“0” potential capacitor  s/c
• Large values
•I/p coupling • Block DC and
capacitor  s/c pass AC signal
• Large values
• Block DC and
pass AC signal • Bypass
capacitor  s/c
Voltage-divider configuration
•Large values
under AC analysis

R1 RC

Redraw the voltage-divider


+ configuration after removing dc
RS + Vo supply and insert s/c for the
Vi
-
R2
capacitors
VS
-

14
Modeling of
BJT begin
HERE!

15
AC bias analysis :

1) Kill all DC sources

2) Coupling and Bypass capacitors are short cct. The


effect of there capacitors is to set a lower cut-off
frequency for the cct.

3) Inspect the cct (replace BJTs with its small signal


model:re or hybrid).

4) Solve for voltage and current transfer function, i/o


and o/p impedances.
16
IMPORTANT PARAMETERS

• Input impedance, Zi
• Output impedance, Zo
• Voltage gain, Av
• Current gain, Ai

Input Impedance, Zi(few ohms  M)

The input impedance of an amplifier is the value as a


load when connecting a single source to the I/p of
terminal of the amplifier.
17
Two port system
-determining input impedance Zi

• The input impedance of transistor can be approximately


determined using dc biasing because it doesn’t simply
change when the magnitude of applied ac signal is change.
18
Demonstrating the impact of Zi

19
For the system of Fig. Below, determine the level of
input impedance
1k Ω

+ Rsense +
Zi
VS=2mV Two-port
Vi=1.2mV
- system
-

20
Output Impedance, Zo (few ohms  2M)

The output impedance of an amplifier is determined at


the output terminals looking back into the system with
the applied signal set to zero.

21
For the system of Fig. below, determine the level of
output impedance
Rsense

Two-port + 20 k Ω
system +
Zo
V=1 V
Vs=0V Vo=680mV -
-

22
For the system of Fig. below, determine Zo if V=600mV,
Rsense=10k and Io=10A
Rsense
Rsource
+
Io +
Vs=0V Two-port Vo V
Zo
system -
-

23
Using the Zo obtained in example , determine IL for the
configuration of Fig below if
RL=2.2 k and Iamplifier=6 mA.

Iamplifier
IL

IRo
RL
Zo=Ro

24
Voltage Gain, AV

• DC biasing operate the transistor as an amplifier.


Amplifier is a system that having the gain behavior.
• The amplifier can amplify current, voltage and power.
• It’s the ratio of circuit’s output to circuit’s input.
• The small-signal AC voltage gain can be determined
by:

25
By referring the network below the analysis are:

Rsource

+ + +
Zi
VS AvNL Vo
Vi
-
- -

Determining the no load voltage gain

26
For the BJT amplifier of fig. below, determine: a)Vi b)
Ii c) Zi d) Avs
Rs

+ 1.2 kΩ + +
Zi BJT amplifier
VS=40mV AvNL=320 Vo=7.68V
Vi
-
- -

27
Current Gain, Ai

• This characteristic can be determined by:


Io
Ii
+
+
Zi BJT
amplifier RL Vo
Vi
-
-

Determining the loaded current gain

Io
Ai 
Ii

28
Hybrid Equivalent Model
• re model is sensitive to the dc level of operation that result input
resistance vary with the dc operating point
• Hybrid model parameter are defined at an operating point that may
or may not reflect the actual operating point of the amplifier

29
Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.

30
Determination of parameter

H22 is a conductance! 31
General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
32
Common emitter hybrid equivalent circuit

33
Common base hybrid equivalent circuit

34
Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

35
Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro
36
Common-Emitter h-Parameters

37
Common-Base re vs. h-Parameter Model

hib = re
hfb = -
38
Common-Base h-Parameters

39
re TRANSISTOR MODEL

• employs a diode and controlled current source to


duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor


re model
re equivalent cct.

40
Therefore, the input impedance, Zi = re
that less than 50Ω.
For the output impedance, it will be as
follows;

Ie Ic
e c
isolation
re Ic  α Ie part,
b b Zi=re Zo  
common-base re equivalent cct 41
The common-base characteristics

42
43
44
For a common-base configuration in figure
below with IE=4mA, =0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Zi b) Calculate Av if RL=0.56k
c) Find Zo and Ai

45
Solution:

46
47
For a common-base configuration in previous
example with Ie=0.5mA, =0.98 and AC signal of 10mV is
applied, determine:
a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

48
Common-Emitter Configuration

Common-emitter BJT transistor


re model
re equivalent cct.
Still remain controlled-current source (conducted
between collector and base terminal)
Diode conducted between base and emitter terminal

Input Output
Base & Emitter terminal Collector & Emitter terminal

49
c

Ic
Ic   Ib
Ib
b

e e

re model npn common-emitter configuration

50
The output graph

51
Output impedance Zo

52
Ii=Ib BJT common-emitter Io  Ic   Ib
transistor amplifier Io
e c
+
+
Vi re Zo   RL
Zi   re Vo
-
- b b

Determining voltage and current gain for the


common-emitter amplifier

53
Given =120 and IE(dc)=3.2mA for a common-
emitter configuration with ro=  , determine:

a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

54
Using the npn common-emitter configuration,
determine the following if =80, IE(dc)=2 mA and ro=40 k

a) Zi b) Ai if RL =1.2k  c) Av if RL=1.2k 
Ii=Ib
b c
Io
 Ib
re ro RL

e
re model for the C-E transistor configuration

55
Important Links for problem practice and additional reading

Good Problems on hybrid model_IITD

More on hybrid model and multi stage amplifiers

You might also like