The document discusses CMOS inverters and VLSI design. It covers the basic structure of a CMOS inverter, including the PMOS and NMOS transistors. It describes the DC transfer characteristics and switching behavior of a CMOS inverter. It also discusses propagation delay and how a CMOS inverter can be modeled as an RC circuit.
The document discusses CMOS inverters and VLSI design. It covers the basic structure of a CMOS inverter, including the PMOS and NMOS transistors. It describes the DC transfer characteristics and switching behavior of a CMOS inverter. It also discusses propagation delay and how a CMOS inverter can be modeled as an RC circuit.
The document discusses CMOS inverters and VLSI design. It covers the basic structure of a CMOS inverter, including the PMOS and NMOS transistors. It describes the DC transfer characteristics and switching behavior of a CMOS inverter. It also discusses propagation delay and how a CMOS inverter can be modeled as an RC circuit.
• MOS and VLSI Technology a) Design parameters, • Basic MOS Structure b) DC characteristics, a) Basic MOS transistors operation c) Noise Margin, b) Enhancement mode, d) Switching characteristics c) Depletion mode, e) Inverter time delay, d) static and dynamic behavior, f) Power dissipation-static and • Basic CMOS technology dynamic power dissipation, a) p well, n well, b) twin tub, • NMOS inverter. c) SOI d) BiCMOS technology.
04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1
2 CMOS inverter
04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1
3 CMOS inverter
• Comprises both PMOS
and NMOS. • PMOS body is tied to Vdd, NMOS source is tied to GND. (No floating body) • Vin: Gate terminals of PMOS and NMOS • Vout: from drain terminals of PMOS and NMOS
04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1
4 Various regions of operation
• Vtn(Vtp) is the threshold voltage of the n(p)-channel
device. 04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1 5 DC transfer characteristics • A plot between Vout and Vin.
10 • In general, there are 4 timing parameters. • Rise time (tr) is the time, during transition, when output switches from 10% to 90% of the maximum value. • Fall time (tf) is the time, during transition, when output switches from 90% to 10% of the maximum value. – Many designs could also prefer 30% to 70% for rise time and 70% to 30% for fall time.
04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1
11 • The propagation delay high to low (tpHL) is the delay when output switches from high-to-low, after input switches from low-to-high. • The delay is usually calculated at 50% point of input- output switching. • Now, in order to find the propagation delay, we need a model that matches the delay of inverter. • The switching behavior of CMOS inverter could be modeled as a resistance Ron with a capacitor CL, a simple first order analysis of RC network will help us to model the propagation delay. 04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1 12 Our aim is to find 't' at Vdd / 2. Vout = (1-e^-(t/τ)) Vdd, where τ = RC = time constant.
Substituting 'Vout' equal to Vdd/2, and 't'
equal to 'tp' in above equation, we get the following :
Vdd/2 = (1-e-(tp/τ)) Vdd
Therefore, tp = ln(2)τ = 0.69τ
Hence, tp = 0.69RC
Hence, a CMOS inverter can be modeled
as an RC network, where R = Average 'ON' resistance of transistor C = Output Capacitance
04/13/2023 BEEDEE716-VLSI DESIGN / UNIT-1
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