Application for Heavy

Current and Components.

What is heavy Current?
An electrical heavy current is caused by a low (or very low) resistance of a
device and/or a high (or a very high) voltage applied to the device.
The strength of the electrical current will depend of the difference of
accumulated charge between the two elements (difference of potential) and
the properties of the media were the ions are moving through (resistance,
measured in Ohms). The higher the difference of potential and the lower of
media resistance, the higher will be the ions flow and the electrical current.
Some components that make use of heavy current include:
• Capsule thyristors,
• thyristor /doide modules,
• triacs,
• Capsule rectifier diodes,
• stud mount rectifier diodes,
• fast diode modules,
• power insulated gate FET's (IGFET’s).
• Capsule Thyristors
Capsule type thyristors (SCR’s) are constructed with glass passivated chips and
are assembled in high reliable, robust hermetic sealed housing structures. They
are mechanically strong and are stable under negative environmental
conditions.
Thyristors in capsule type have high reliability and exceptional stability at high
temperatures.They have superior surge capabilities.
Capsule type Thyristors are used in applications such as industrial power
supplies, induction heating, motor controls, UPS welding, battery chargers, soft
starters, etc.
The current range starts from 400A upto 1200A, with voltages upto 2200V.
Devices are available in Capsule (Disc, Hockey Puk) ceramic packages.
Capsule Thyristor
• Thyristor /diode modules
The thyristor/diode modules can be used as a rectifier for automation motor
control and drives. Rectifiers used in UPS systems convert AC to DC and charge
the batteries of the system. The thyristor/diode modules can also be used as a
bypass to ensure power is maintained in the event of a UPS failure.
The Thyristor-Diode Modules areused in online/offline inverters, battery
chargers, power supplies, motor drives, single and three phase bridge circuits,
industrial welders & heat/temperature control circuits.

The current range starts from 25A upto 600A, with voltages upto 2400V.
Devices are available in Module Packaging (M1, M3, M4, M5)
Thyristor/diode modules
• Triacs
A TRIAC (triode for alternating current; also bidirectional triode thyristor or
bilateral triode thyristor) is a three terminal electronic component that
conducts current in either direction when triggered. The term TRIAC is a
genericized trademark.

TRIACs are a subset of thyristors (analogous to a relay in that a small voltage

and current can control a much larger voltage and current) and are related to
silicon controlled rectifiers (SCRs).
Triacs are electronic components that are widely used in AC power control
applications. They are able to switch high voltages and high levels of current,
and over both parts of an AC waveform. This makes triac circuits ideal for use
in a variety of applications where power switching is needed.
One particular use of triac circuits is in light dimmers for domestic lighting, and
they are also used in many other power control situations including motor
control and electronic switches.

As a result of their performance, triacs tend to be used for low to medium

power electronic switching applications, leaving thyristors to be used for the
very heat duty AC power switching applications.
The triac is a development of the thyristor. While the thyristor can only control
current over one half of the cycle, the triac controls it over two halves of an AC
waveform.

As such the triac can be considered as a pair of parallel but opposite thyristors
with the two gates connected together and the anode of one device connected
to the cathode of the other, etc..
Triac applications
Triacs are used in many applications. These electronic components are often used in low to
medium power AC switching requirements. Where large levels of power need to be switched,
two thyristors / SCRs tend to be used as they can be controlled more easily.

Nevertheless triacs are widely used in many applications:

Lighting control - especially domestic dimmmers.

Control of fans and small motors.
Electronic switches for general AC switching and control
There are naturally many other triac applications, but these are some of the most common.

In one specific application, triacs can be included in modules called solid state relays. Here an
optical version of this semiconductor device is activated by an LED light source turning the solid
state relay on according to the input signal.
Typically within solid state relays, the LED light or infrared source and the
optical triac are contained within the same package, sufficient isolation being
provided to withstand high voltages which may extend to hundreds of volts or
possibly even more.

Solid state relays come in many forms, but those used for AC switching may
use a triac.
Triac
• Capsule Rectifier Diode
Rectifier diodes are used in power supplies to convert alternating current (AC)
to direct current (DC), a process called rectification. They are also used
elsewhere in circuits where a large current must pass through the diode.
The most common function of a diode is to allow an electric current to pass in
one direction (called the diode's forward direction), while blocking it in the
opposite direction (the reverse direction). As such, the diode can be viewed as
an electronic version of a check valve. This unidirectional behavior is called
rectification, and is used to convert alternating current (ac) to direct current
(dc). Forms of rectifiers, diodes can be used for such tasks as extracting
modulation from radio signals in radio receivers.
However, diodes can have more complicated behavior than this simple on–off
action, because of their nonlinear current-voltage characteristics.
Semiconductor diodes begin conducting electricity only if a certain threshold
voltage or cut-in voltage is present in the forward direction (a state in which
the diode is said to be forward-biased).
The voltage drop across a forward-biased diode varies only a little with the
current, and is a function of temperature; this effect can be used as a
temperature sensor or as a voltage reference.
Also, diodes' high resistance to current flowing in the reverse direction
suddenly drops to a low resistance when the reverse voltage across the diode
reaches a value called the breakdown voltage.
Capsule Rectifier Diode
Stud Mount Rectifier diodes
A stud diode, often referred to as a stud mounted diode, is an electrical
component with two terminals that allows the flow of electricity in a single
direction. The construction of stud diodes greatly varies based on user
preference and needs, but the general layout consists of a stud mount and a
diode circuit.
Many types of diodes can be referred to as a stud diode since the stud diode
refers only to the construction and not the type of diode. There are two
classes of diodes that can be stud mounted: signal diodes and rectifier diodes.
Signal diodes allow the flow of small electrical currents up to 100 milliamps
(mA) while rectifier diodes convert an alternating current into a direct current,
having a drop of forward voltage of 0.7 Volts (V).
Stud Mount Rectifier diodes
Fast Diode Modules
The high-voltage Fast Diode modules have been designed for use in rail traction, industrial motor
drives, induction heating and power generation.

The Fast Diode modules are designed to match and work as the input rectifiers for the existing
Dynex range of IGBT modules.

Fast switching times and low reverse recovery losses allow high frequency operation, making the
device suitable for the latest drive designs employing PWM and high frequency switching.
Features of Fast Diode Modules include:
• Fast switching
• Low reverse recovery charge
• High switching speed
• Low forward volt drop
• Isolated AlSiC base with AlN substrates
• Single, double and triple diode configurations available with current ratings up to 3600A
Fast diode modules
Power Insulated Gate FET's (IGFET’s)
The Insulated-Gate Field-Effect Transistor (IGFET), also known as the Metal
Oxide Field Effect Transistor (MOSFET), is a derivative of the field effect
transistor (FET). It exhibits an even larger resistive input impedance due to the
thin layer of silicon dioxide that is used to insulate the gate from the
semiconductor channel. This insulating layer forms a capacitive coupling
between the gate and the body of the transistor.
The MOSFET is widely used in large-scale digital integrated circuits where its
high input impedance can result in very low power consumption per
component. Many of these circuits feature bipolar transistor connections to
the external terminals, thereby making the devices less susceptible to damage.
The MOSFET comes in four basic types, N-channel, P-channel, depletion and
enhancement.
The field-effect transistor (FET) has taken various forms like that of the
junction field effect transistor (JFET), in which the gate voltage controls the
depletion width of a reverse-biased p–n junction.
A field effect transistor is a three terminal semiconductor device in which
current conduction is by one type of carriers ( i.e either electrons or holes)
and is controlled by the effect of electric field.
Unlike the usual transistor, its operation depends upon the flow ofmajority
carriers only i.e. the current conduction in this case is either by electrons or
holes.
The flow of current is controlled by means of an electric field developed
between the gate electrode and the conducting channel of the device.
Insulated Gate Commutated Thyristors (IGCT’s)
The integrated gate-commutated thyristor (IGCT) is a power semiconductor
electronic device, used for switching electric current in industrial equipment.
An IGCT is a special type of thyristor. It is made of the integration of the gate
unit with the Gate Commutated Thyristor (GCT) wafer device.
The close integration of the gate unit with the wafer device ensures fast
commutation of the conduction current from the cathode to the gate. The
wafer device is similar to a gate turn-off thyristor (GTO).
They can be turned on and off by a gate signal, and withstand higher rates of
voltage rise (dv/dt), such that no snubber is required for most applications.
 In an IGCT, the gate turn-off current is greater than the anode current. This
results in a complete elimination of minority carrier injection from the lower PN
junction and faster turn-off times.
The main differences are a reduction in cell size, and a much more substantial
gate connection with much lower inductance in the gate drive circuit and drive
circuit connection.
The very high gate currents and fast dI/dt rise of the gate current mean that
regular wires can not be used to connect the gate drive to the IGCT. The drive
circuit PCB is integrated into the package of the device.
The drive circuit surrounds the device and a large circular conductor attaching to
the edge of the IGCT is used. The large contact area and short distance reduce
both the inductance and resistance of the connection.
The main applications are in variable-frequency inverters, drives, traction and
fast AC disconnect switches. Multiple IGCTs can be connected in series or in
parallel for higher power applications.
The integrated gate-commutated thyristor is the power switching device of
choice for demanding high-power applications such as:
- MVD (Medium Voltage Drives)
- Marine drives
- Co-generation
- Wind power converters
- STATCOMs
- DVRs (Dynamic Voltage Restorers)
- BESS (Battery Energy Storage Systems)
- SSB (Solid State Breakers)
- DC traction line boosters
- Traction power compensators
- Interties
Insulated Gate Commutated Thyristors (IGCT’s)