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Presentation on Hall Effect

Presented by: Ranjit Dey
Student Code: BWU/BTD/22/165
Course Code: BSCD201
Course Name: Semiconductor Physics
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Hall Effect

 Hall effect is a process in which a transverse

electric field is developed in a solid material
when the material carrying an electric current is
placed in a magnetic field that is perpendicular
to the current. 

 Hall effect was proposed by physicist Edwin

Herbert Hall in 1879.
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Hall Effect
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Lorentz Force

 Lorentz force, the force F exerted on a charged

particle q moving with velocity v through an electric
field E and magnetic field B.

 Lorentz force is equal to,

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Hall Voltage

 A potential difference will be generated between both

sides of the plate which can be measured using a meter.

 The Hall voltage represented as VH is given

by the formula,

I is the current flowing through the sensor

B is the magnetic field strength
q is the charge
n is the number of charge carriers per unit volume
d is the thickness of the sensor.
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Hall Coefficient

 Ratio of the induced electric field to the product of current density and magnetic field is
known as Hall Coefficient.

 Hall Coefficient () is equal to,

 Unit of Hall Coefficient

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Application of Hall Effect

• Split Ring Clamp-on Sensor

• Analog Multiplication
• Power Sensing
• Position and Motion Sensing
• Automotive Ignition and Fuel Injection
• Wheel Rotation Sensing
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Significance of Hall Effect

• Hall Effect describes an important difference between positive and

negative charges that is positive charges will move in one direction NAD
negative charges will move in opposite direction of negative charges.

• Hall effect proves that current in the metals produced due to the motion
of electrons.
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