P-N Junction/diode

Dr. Arjun Dahiya

Assistant Professor
The NorthCap University
 P-N Junction
What is P-N Junction?

 A P-N junction is an interface or boundary between two semiconductor material types inside a
semiconductor, namely the p-type and the n-type.
 Formation of the depletion layer

Also, when an electron diffuses from the n-side to the p-side, an ionised donor is left behind on the n-side, which is

immobile. As the process goes on, a layer of positive charge is developed on the n-side of the junction. Similarly, when a

hole goes from the p-side to the n-side, an ionized acceptor is left behind on the p-side, resulting in the formation of a layer

of negative charges in the p-side of the junction. This region of positive charge and negative charge on either side of the

intersection is termed as the depletion region. Due to this positive space charge region on either side of the junction, an

electric field with the direction from a positive charge towards the negative charge is developed. Due to this

electric field, an electron on the p-side of the junction moves to the n-side of the junction. This motion is termed the drift.

Here, we see that the direction of the drift current is opposite to that of the diffusion current
How much is the Built-in Voltage?
 Example
Q. Consider a silicon p-n junction at T=300K with doping densities Na= 1*1018 cm-3 and Nd=
1*1015 cm-3. Calculate built-in potential/voltage. Assume ni= 1.5*1010 cm-3 .
Solution:
We know

Na= 1*1018 cm-3 k- 1.38 X10-23 J/k , k= 300K, q= 1.6X10-19

Nd= 1*1015 cm-3
ni= 1.5*1010 cm-3

Vbi = 0.0259 ln[ (1018 )(1015)/ (1.5*1010)2]

= 0.754V
If we change the acceptor doping from Na= 1*1018 cm-3 to Na= 1*1016 cm-3 but keep all other parameters
values constant, then the built-in potential barrier becomes Vbi = 0.635V
Source : Google image
 Biasing of the P-N junction

There are two operating regions in the P-N junction diode:

 P-type
 N-type

There are three biasing conditions for the P-N junction diode, and this is based on the voltage applied:

 Zero bias: No external voltage is applied to the P-N junction diode.

 Forward bias: The positive terminal of the voltage potential is connected to the p-type while the negative terminal
is connected to the n-type.

 Reverse bias: The negative terminal of the voltage potential is connected to the p-type and the positive is
connected to the n-type.
 P-N Junction with applied voltage

Reverse bias

Forward bias
W= width of depletion layer ( may inc. or dec. depending on voltage applied)
 Reverse Bias
+Voltage to the n side and –Voltage to the p side:
 Forward Bias

Negative voltage to n side positive to p side

More electrons supplied to n, more holes to p

Depletion region gets smaller

 Current-Voltage Characteristics of diode
N =n-type semiconductor
P = p-type semiconductor

•I0 = Reverse saturation current

•K- Boltzmann constant
•T- temperature
•η – Ideality factor
V and VD – diode voltage/applied voltage (are same)
I=ID- diode current
 Applications of P-N Junction Diode

 P-N junction diode can be used as a photodiode as the diode is sensitive to light

when the configuration of the diode is reverse-biased.

 It can be used as a solar cell.

 When the diode is forward-biased, it can be used in LED lighting applications.

 It is used as a rectifier in many electric circuits and as a voltage-controlled oscillator

in varactors
 In summary
 A p-n junction at equilibrium sees a depletion width and a built-in potential barrier. Their values
depend on individual doping concentrations.

 Forward biasing the junction shrinks the depletion width and the barrier, allowing thermionic
emission and higher current. The current is driven by the splitting of the quasi-Fermi levels.

 Reverse biasing the junction extends the depletion width and the barrier, cutting off current and
creating a strong I-V asymmetry.