BJT
An American physicist born in
William Bradford Shockley Jr.
(13.02.1910 – 12.08.1989)
London, William Shockley invented
the transistor along with John
Bardeen and Walter Brattain; the
three shared the Nobel Prize in
Physics in 1956.
After the end of World War II,
a solid-state physics group was
formed at Bell Laboratories, which
was directed by Shockley and chemist
Stanley Morgan. Among the members
were John Bardeen and Walter
Brattain.
Their goal was to find a
semiconductor to replace vacuum
tubes
John Bardeen 1908-1991 was an
American physicist. He is the only
person to be awarded the Nobel Prize
in Physics twice: first in 1956
with William Shockley and Walter
Brattain for the invention of
the transistor; and again in 1972
with Leon N Cooper and John Robert
Schrieffer for a fundamental theory of
conventional superconductivity known
as the BCS theory.

John Bardeen
 1908-1991
Walter Houser Brattain 1902-
1987 was an American physicist
at Bell Labs who, along with fellow
scientists JohnBardeen and Willia
m Shockley, invented the point-
contact transistor in December
1947.[1] They shared the1956 Nobel
Prize in Physics for their invention.
Brattain devoted much of his life to
research on surface states.

Walter Houser Brattain

1902-1987
John Bardeen, William Shockley and Walter Brattain 
at Bell Labs, 1948.
BJT WITH BIASING
CONFIGURATIONS OF BJT

 CB
 CE
 CC
CE CONFIGURATION
O/P CHARACTERISTICS
 h- PARAMETER
h parameters are useful in describing the input-
output characteristics of circuits where it is hard to measure
Z or Y parameters (such as a transistor). H parameters
encapsulate all the important linear characteristics of the
circuit, so they are very useful for simulation purposes. The
relationship between voltages and current in h parameters
can be represented as:                               
TRANSISTOR HYBRID MODEL ADVANTAGES

Easy to measure
Can be determined from the transistor static characteristics
Convenient to use in circuit analysis and design
Easily convertible from one configuration to other
Readily supplied by manufacturers
 DETERMINING H PARAMETERS
Let us short circuit the output port of a two port network as shown below,

                                                                                                                 

                                 
h11 = Zin with output shorted <Ω> H12 = Reverse voltage gain <dimensionless>
h21 = Forward current gain<dimensionless> h22 = Output admittance<Siemans>
EQUIVALENT CIRCUIT
V1  h ix I1  h rx V2        (i)
I 2  h fx I1  h ox V2        (ii)
h – parameter for CB configuration

V1  h ix I1  h rx V2        (i)
I 2  h fx I1  h ox V2        (ii)

V1  h ib I1  h rb V2        (i)
I 2  h fb I1  h ob V2        (ii)
h – parameter for CE configuration

V1  h ix I1  h rx V2        (i)
I 2  h fx I1  h ox V2        (ii)

V1  h ie I1  h re V2        (i)
I 2  h fe I1  h oe V2        (ii)
h – parameter for CC configuration

V1  h ix I1  h rx V2        (i)
I 2  h fx I1  h ox V2        (ii)

V1  h ic I1  h rc V2        (i)
I 2  h fc I1  h oc V2        (ii)
 Points to be noted

V2  i L rL  i 2 rL (sin ce i 2  i L )

A i   i 2 i1
CURRENT GAIN
V2  i L rL  i 2 rL (sin ce i 2  i L )
A i   i 2 i1
INPUT IMPEDANCE
VOLTAGE GAIN
OUTPUT ADMITTANCE
CB h-model
CE h-model
CC h-model