Progress report

報告人 : 許弘承
指導教授 : 吳孟奇
日期 :2023/1/6

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 Outline

• 1.process flow
• 2.TLM
• 3.DC
• 4.Future work

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 Mesa isolation Deposit passivation
Ohmic contact Source, drain, gate via etching
gate metal Contact pad

Process flow

GaN cap 2nm

AlGaN(24%,17nm)
AlN spacer 1nm
Channel GaN 300nm
AlGaN B.B.
Buffer+GaN buffer 1.5μm

Silicon Substrate

Top View Side View

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 Mesa isolation Deposit passivation
Ohmic contact Source, drain, gate via etching
gate metal Contact pad

Process flow
Dry etching by ICP

GaN
GaNcap
cap2.5nm
2nm
AlGaN(24%,18nm)
AlGaN(24%,17nm)
AlNAlN spacer
spacer 1nm
Channel
Channel GaN 300nm
Channel GaN
GaN 300nm
300nm
AlGaN B.B.
AlGaN B.B. 1.5μm
Buffer+GaN
Buffer+GaN buffer
buffer 1.5μm
Buffer+GaN buffer 1.5μm
Silicon Substrate
Silicon Substrate

Top View Side View

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 Mesa isolation Deposit passivation
Ohmic contact Source, drain, gate via etching
Contact pad

Process flow
gate metal

Depesit Ti/Al/Ni/Au (250/1250/450/750)(Å) by E-gun

RTA 850°C 30s,ramping 40°C/s
S D S
GaN
GaNcap
cap2.5nm
2nm
AlGaN(24%,18nm)
AlGaN(24%,17nm)
AlNAlN spacer
spacer 1nm
S Channel GaN 300nm
Channel
Channel GaN
GaN 300nm
300nm
AlGaN B.B.
D AlGaN B.B. 1.5μm
Buffer+GaN
Buffer+GaN buffer
buffer 1.5μm

S Buffer+GaN buffer 1.5μm

Silicon Substrate
Silicon Substrate

Top View Side View

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 Mesa isolation Deposit passivation
Ohmic contact Source, drain, gate via etching
gate metal Contact pad

Process flow
Deposit gate metal Ni/Au(300/3000)(Å)
G G
S D S
GaN
GaNcap
cap2.5nm
2nm
AlGaN(24%,18nm)
AlGaN(24%,17nm)
S AlNAlN spacer
spacer 1nm
Channel
Channel GaN 300nm
G Channel GaN
GaN 300nm
300nm
AlGaN B.B.
D
AlGaN B.B. 1.5μm
Buffer+GaN
G Buffer+GaN buffer
buffer 1.5μm

S Buffer+GaN buffer 1.5μm

Silicon Substrate
Silicon Substrate

Top View Side View

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 Deposit passivation
Process flow
Mesa isolation
Ohmic contact Source, drain, gate via etching
gate metal Contact pad

Deposit SiNx 1000Å by PECVD

G
G G
G
S D S
GaN
GaNcap
cap2.5nm
2nm
AlGaN(24%,18nm)
AlGaN(24%,17nm)
S AlNAlN spacer
spacer 1nm
Channel
Channel GaN 300nm
G Channel GaN
GaN 300nm
300nm
AlGaN B.B.
D AlGaN B.B. 1.5μm
Buffer+GaN
Buffer+GaN buffer
buffer 1.5μm
G
Buffer+GaN buffer 1.5μm
S
Silicon Substrate
Silicon Substrate

Top View Side View

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 Deposit passivation
Process flow
Mesa isolation
Ohmic contact Source, drain, gate via etching
gate metal Contact pad

RIE(CF4) etching
GG G
S D S
GaN
GaNcap
cap2.5nm
2nm
S AlGaN(24%,18nm)
AlGaN(24%,17nm)
AlNAlN spacer
spacer 1nm
G Channel GaN 300nm
Channel
Channel GaN
GaN 300nm
300nm
D AlGaN B.B.
S D S AlGaN B.B. 1.5μm
Buffer+GaN
Buffer+GaN buffer
buffer 1.5μm
G
Buffer+GaN buffer 1.5μm
S Silicon Substrate
Silicon Substrate

Top View Side View

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 Mesa isolation Deposit passivation
Process flow Ohmic contact
gate metal
Source, drain, gate via etching
Contact pad

Contact pad Ni/Au(300/3000)(Å)

G G
S D S
GaN
GaNcap
cap2.5nm
2nm
AlGaN(24%,18nm)
AlGaN(24%,17nm)
S AlN
AlNAlN
spacer
spacer
spacer 1nm
1nm
G Channel GaN 300nm
Channel GaN 300nm
D AlGaN B.B.
AlGaN
Buffer+GaN B.B. 1.5μm
buffer
G Buffer+GaN buffer 1.5μm
S Buffer+GaN buffer 1.5μm
Silicon Substrate
Silicon Substrate

Top View Side View

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 TLM

Slope(Ω/
um) Rc(Ω) Rs(Ω/□) (um) ρc (Ω-cm2)
1.4265 0.489 542.07 0.342797 6.37E-07 10
 (um) (um) (um) (um) Insulator Passivation
2*150 2 2 2 -
DC characteristics (1000Å)

S.S / ratio
@1mA/mm (mA/mm) (Ω-mm) (mS/mm) (mA/mm) (mV/dec) @=2V
@=2V @=2V @=10V @=2V

-2.8 411 8.1 101 7E-04 227 3.3E+04

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 (um) (um) (um) (um) Insulator Passivation
150 2 2 2 -
DC characteristics (1000Å)

S.S / ratio
@1mA/mm (mA/mm) (Ω-mm) (mS/mm) (mA/mm) (mV/dec) @=2V
@=2V @=2V @=10V @=2V

-3.2 521 4.1 122 1.2E-03 165 2.1E+04

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 考過的機台
• RIE
• RTA
• PECVD

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 Future work
考 thermal
農曆年後學 E-beam

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Thank you for your attention!

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