Course Title: VLSI and IC Fabrication Technology

Course Code: EEE 4207

Presentation Topic: Chemical Vapor Deposition

Submitted By: Submitted To:

Mostafa Hasan Tushar Safia Akther Dipa

ID: ASH1917003M Lecturer,
Year: 04, Term: 02 Dept. O f EEE
Dept. O f EEE NSTU
NSTU
A N I N S P E C T I O N OF
C H E M I C A L VAPOR
DEPOSITION:

 INTRODUCTION
 MECHANISM
 OVERVIEW
 WHAT IS CVD?
Chemical Vapor Deposition (CVD) is a process used
to deposit thin films of various materials onto a
substrate. The process involves the reaction of vapor
phase chemicals on a heated substrate, resulting
in the deposition of a solid film.
MECHANISM OF C V D

Steps
Here's a general outline of the steps
involved in the working of CVD.

1. Precursor Gases: CVD begins with the

introduction of precursor gases into a
chamber. These gases contain the
elements or compounds that will form
the desired thin film or coating.
Precursors can include organic
compounds, metalorganic compounds, or
inorganic gases.
 MECHANISM OF C V D

2. Chemical Reactions: When the precursor gases come into contact with the substrate, they undergo
chemical reactions. These reactions can involve decomposition, reduction, or other processes depending on
the precursor's chemical properties.

3. Film Formation: As a result of the chemical reactions, solid material begins to form and deposit onto the
substrate surface. This material adheres and grows as a thin film layer. The growth rate and thickness of the
film can be controlled by adjusting parameters such as gas flow rates, temperature, and reaction time.

4. End of Process: Once the desired thickness of the thin film is achieved, the precursor gases are turned off,
and the chamber is cooled down. The substrate with the deposited film is then removed from the CVD
chamber.
OVERVIEW OF C V D

The CVD process involves four main steps:

transport, adsorption, reaction, and
desorption. During transport, the precursor
gases are transported to the substrate.
Adsorption involves the adsorption of the
precursor gases onto the substrate surface.
The reaction step involves the chemical
reaction between the precursor gases and
the substrate surface. Finally, during
desorption, the byproducts are removed from
the substrate surface. Understanding these
steps is crucial for optimizing the CVD
process.
 CONCLUSION
Chemical Vapor Deposition is a versatile process with a wide range of
applications in various industries. The process offers several
advantages over other deposition methods and can produce high-
quality films with complex structures. As technology advances, CVD is
expected to play an increasingly important role in the production of
advanced materials. The versatility of CVD makes it a valuable tool in
many industries, and its potential uses continue to expand.