UNDERLAP DOUBLE GATE MOSFET

AS BIOSENSOR

GUIDED BY-DR.TARUN VARMA Presented by:- ARVIND DAUTANIYA

ASSOCIATE PROFESSOR 2017PEC5430

 OUTLINE
 MOTIVATION
 INTRODUCTION
 DESIGN GEOMETRY
 DESIGN OPERATION
 MERITS
 DEMRITS
 SIMULATIONS RESULTS
 CONCLUSION
 LITERATURE SURVEY

AUTHOR NAME TITLE DESCRIPTION

Ajay, Rakhi Analytical Model of Gate Underlap In this paper, a gate underlap Dielectric Modulated(DM) Double
Double Gate Junctionless MOSFET Gate (DG) Junctionless (JL) Metal-Oxide-Semiconductor Field-
Narang, as a Bio-Sensor Effect Transistor (MOSFET) has been investigated through
Manoj exhaustive device simulation for the label free electrical detection
Saxena, and of the biomolecules. The shift in the threshold voltage has been
Mridula considered as the sensing parameter of the device to detect the
presence of biomolecules when they are immobilized in the gate
Gupta underlap channel region.

Elvis C. Sun A Compact Threshold Voltage Model This paper reports an analysis of gate misalignment effect
for Gate Misalignment Effect of DG on the threshold voltage of double-gate nMOS devices
and James B. FD SOI nMOS Devices Considering
Kuo, Fellow, using a compact model considering the fringing electric
Fringing Electric Field Effects
field effect, biased at zero-bias . Using the conformal
IEEE
mapping transformation approach
 LITERATURE SURVEY
AUTHOR TITLE DESCRIPTION

NAME
Chi-Woo Lee, High-Temperature This paper investigates the temperature dependence of
Adrien Borne, Performance of Silicon the main electrical parameters of junctionless (JL)
Isabelle Junctionless MOSFETs silicon nanowire transistors. Direct comparison is made
Ferain, Aryan
to silicon nanowire (trigate) MOSFETs. Variation of
Afzalian,
Member, parameters such as threshold voltage and ON–OFF
IEEE, Ran current characteristics is analyzed.
Yan, Nima The JL silicon nanowire FET has a lager variation of
Dehdashti threshold voltage with temperature than the standard
Akhavan, inversion- and accumulation- mode FETs. Unlike in
Pedram classical devices, the drain current
Razavi, and of JL FETs increases when temperature is increased.
Jean-Pierre
Colinge,
Fellow, IEEE
 MOTIVATION
 REDUCED SHORT CHANNEL EFFECTS DUE TO SCALING

 HIGH SENSITIVITY

 IMPROVE SUBTHRESHOLD SWING

 REDUCING THE PARASITICS CAPACITANCE

 INTRODUCTION

 MOSFET dimensions have continuously been scale down which give

rise to second order effects and give rise to more power dissipation
 Many multi gate FET are introduced for greater gate control over
the channel
 One of them was double gate FET introduced ,proposed in 1980
 Underlap technique is also used further reduction in SCE’S and
gate induced drain leakages
DESIGN OF DEVICE
 DESIGN SPECIFICATION:-
Lg= 55nm
tox=1nm
Lcavity=5nm
tsi=10nm
Ns=Nd=Nch=1e25/m3
DESIGN OPERATION:-
In the subthreshold region, the gate field pushes the majority
carriers away from the surfaces, and the silicon body is fully
depleted.

In the above-threshold region, The depletion width in the body

decreases, and the device forms a conducting channel in the center
squeezed by depleted regions near the silicon surface.

When the gate voltage increases to flat band voltage, completely

neutral channel is created, and the bulk current tends to reach its
maximum value.
DEVICE STRUCTURE WITHOUT BIOMOLECULE
LOG ID VERSUS GATE VOLTAGE
DETECTION OF NEUTRAL BIOMOLECULE
LOG ID VERSUS GATE VOLTAGE VARIATION
FOR NEUTRAL BIOMOLECULE
SENSTIVITY FORMULA
 OBSERVATION TABLE FOR NEUTRAL BIOMOLECULE

BIOMOLECULE THRESHOLD SUBTHRESHOLD SENSTIVITY

VOLTAGE(v) SWING(mv/decade) (%)

STREPTAVIDIN 0.112253 103.193 20.26

(K=2.1)

PROTEIN (K=2.50) 0.113295 103.153 20.35

BIOTIN (K=2.63) 0.113633 103.141 20.3885

APTES (K=3.57) 0.116069 103.048 20.611

AIR (K=1) 0.109383 103.301 0

 VARIATION IN THRESHOLD VOLTAGE VERSUS DIELECTRIC CONSTANT

Chart Title
0.115

0.1145

0.114
THRESHOLD VOLTAGE

0.1135

0.113

0.1125

0.112

0.1115

0.111
0 1 2 3 4 5 6 7 8
DIELECTRIC CONSTANT
(K)
 SENSTIVITY VERSUS DIELECTRIC CONSTANT
2.07

2.06

2.05

2.04

2.03

2.02

2.01

2
2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8
DETECTION OF CHARGED BIOMOLECULE
OBSERVATION TABLE FOR CHARGED BIOMOLECULE
CHARGE CONCENTRATION CHANGE IN THRESHOLD SUBTHRESHOLD SWING
(Q×1015 m-2 ) VOLTAGE (mv/decade)
(milliVolts)

-10 0.11 103.301

-7 0.12 103.153

-5 0.14 103.141

-3 0.13 103.048

-1 0.15 103.193

103.193
0 0

103.193
1 -0.70

103.193
3 -0.22

103.193
5 -0.38

103.193
7 -0.53
VARIATION IN ION CURRENT VERSUS GATE VOLTAGE
THRESHOLD VOLATGE VERSUS CHARGE ON BIOMOLECULE
0.8

0.7

0.6
Threshold Voltage

0.5

0.4

0.3

0.2

0.1

0
-15 -10 -5 0 5 10 15

Charged Biomolecules(x1015 m-2)

SENSITIVITY VERSUS CHARGE CONCENTRATION OF BIOMOLECULE

70

60

50
SENSITIVITY ( %)

40

30

20

10

0
-1 5 -1 0 -5 0 5 10 15

CHARGE CONCENTRATION (Q x1015 m-2)

 MERITS
 Comparatively reduced IOFF current due to DIBL.

 Better gate control on channel.

 Reduction in mobility degradation.

 Sensitivity is comparatively high.

 DMERITS
 Introduction of extrinsic parasitic resistance between
Rs in series with the channel and the source/ drain

 Gate overdrive voltage is reduced by an amount

Id*Rs

 Ioff current is comparatively high

 Trans conductance and performance measurement

drive current Ion degraded
REFERENCES
 J.P.Colinge, “Multi-gate SOI MOSFETs,” Microelectronic Engineering,
vol.84, issues 9-10, pp. 2071-2076, Sept-Oct, 2007.
 Multiple Gate MOSFETs: The Road to the Future, Amitava DasGupta,
978-1-4244-1728-5/07©2007 IEEE
 Kunihiro Suzuki, et al, “Scaling Theory for Double-Gate SO1
MOSFET’s “IEEE Trans. Electron Devices, vol. 40, no. 12, pp. 2326–
2329, Dec. 1993.
 A. Bansal, B. C. Paul, and K. Roy, “Impact of gate underlap on gate
capacitance and gate tunneling current in 16 nm DGMOS devices,” in
Proc. IEEE SOI Conf., 2004, pp. 94–95.
 B. Paul, A. Bansal, and K. Roy, “Underlap DGMOS for digital
subthresholdoperation,” IEEE Trans. Electron Devices, vol. 53, no.
4,pp. 910–913, Apr. 2006.