INSULATED GATE BIPOLAR TRANSISTOR

(IGBT):
•IGBT (Insulated Gate Bipolar Transistor) is a three terminal power
switch having high input impedance and low on-state power loss as
in BJT (Bipolar Junction Transistor). Thus, IGBT is a combined form of
best qualities of both BJT and MOSFET.
• IGBT is a three-terminal device. The three terminals are Gate (G), Emitter (E)
and Collector (C). The circuit symbol of IGBT is shown below.
PHYSICAL MATERIAL CONSTRUCTION OF
IGBT
SEMICONDUCTOR CONTROLLED RECTIFIER (SCR)
OR THYRISTOR
A thyristor is a four-layer semiconductor device, consisting of
alternating P-type and N-type materials (PNPN). A thyristor
usually has three electrodes: an anode, a cathode and a gate,
also known as a control electrode.

symbol
PHYSICAL MATERIAL CONSTRUCTION OF
SCR