Carbon Nano Tubes SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE

 Carbon nanotubes (CNTs) are cylindrical molecules that consist of rolled-up sheets of single-layer carbon atoms
(graphene).
 They can be single-walled (SWCNT) with a diameter of less than 1 nanometer (nm) or multi-walled (MWCNT),
consisting of several concentrically interlinked nanotubes, with diameters reaching more than 100 nm.
 CNTs are chemically bonded with sp2 bonds, an extremely strong form of molecular interaction.
 CNTs provide an opportunity to develop ultra-high strength, low-weight materials that possess highly conductive
electrical and thermal properties.
Properties of carbon nanotubes
 Mechanical tensile strength can be 400 times that of steel.
 They are very light-weight –their density is one sixth of that of steel.
 Thermal conductivity is better than that of diamond.
 They have very high aspect ratio greater than 1000, i.e. in relation to their length they are extremely thin.
Applications
 Electrochemical and biosensors.
 cathode ray tubes (CRTs).
 Hydrogen storage cells.
 Electrical-shielding applications etc.
 FINFETS SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE

 A fin field-effect transistor(FinFET) is a multigate non-planar device.

 MOSFET built on a substrate where the gate is wrapped around the channel, forming a
double or even multi gate structure. These devices have been given the generic name
"Finfet's" because the source/drain region forms fins on the silicon surface.
 The FinFET devices have significantly faster switching times and higher current density than
planar CMOS device. In double-gate transistor, the gates control the energy barrier between
source and drain effectively. Therefore, the Short Channel Effect (SCE) can be suppressed
without increasing the channel concentration.
 The operation of FINFET does not differ much from a traditional FET. There is an one source
and drain contact as well as gate to control the current flow.
 The channel between the drain and source is built as 3D bar on the top of the Si substrate
and are called fin. The thickness of the fin determines the effective channel length of the
device. Since gate is wrapped around the channel so that there can be several gate
electrodes on each side which leads to the reduction of leakage current and an enhanced
drive current.
 FINFETS SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE

ADVANTAGES OF FINFET:
 Suppressed Short channel Effect(SCE).
 Better capability in driving current.
 More compact in size.
 Low cost.

DISADVANTAGES OF FINFET:
 Reduced mobility of electrons.
 Higher Source and Drain Resistance.
 Poor Reliability.
 3D-IC SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE

 3D-IC is a chip in which two or more layers of active electronic components are integrated
both Vertically and horizontally into a single circuit.
 In 2D IC’s, as we try to increase the performance and efficiency of the chip the complexity
of chip design increases and this requires more and more transistors. Thus it leads to more
interconnections and hence the delay increases due to parasitic resistance & capacitance.
 Thus large growth in technology and increasing demand for performance, functionality and
cost leads to evolution of 3D IC technology.
 In a 3D design structure the entire chip is divided by number of layers of oxide and metal
to form transistors.
 3D is a concept that can Significantly help in:
 Improve Interconnect Performance.
 Increases Packaging Density.
 Reduces Chip Area.
 Decreases Power Dissipation.
 3D-IC SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE

 There are 4 ways to build 3D-IC:

 Monolithic.
 Wafer on Wafer.
 Die on Wafer.
 Die on Die.
ADVANTAGES OF 3D-IC
 3D integration can reduce the wiring, thereby reducing the capacitances, power dissipation
and chip area improves performance.
 Digital and Analog circuits can be formed with better noise performance.
 Cost effective than 2D IC’s.
 With shorter interconnects both switching energy and delay expected to be reduced.
DISADVANTAGES OF 3D-IC
 Thermal Issues in 3D circuits.
 Reliability Issues.
 Transmission Gates
 Advantages
 Transmission gates can operate at very high speed.
 Complex gates can be implemented using minimum number of transistors, which also reduces
parasitic’s.
 Transmission Gate arrangement avoids the problem of reduced noise margin.
 Transmission gates eliminates the signal degradation in the output logic levels.

 Disadvantages
 Time-skew problems can lead to short circuits.
 Transmission gates requires complemented control signals.

SUPRITH KUMAR K S, Assistant Professor, ECE Dept, BMSCE